Robust D-wave pairing correlations in a hole-doped spin-fermion model

Pairing correlations are studied numerically in a hole-doped spin-fermion model. Simulations performed on up to 12 x 12 clusters provide indications of D-wave superconductivity away from half-filling comparable to those of the 2D t-J model. The pairing correlations are the strongest in the direction perpendicular to the dynamic stripes that appear in the ground state at some densities. An optimal doping, where correlations are maximized, was observed at approximately 25% doping with an estimated T(c) approximately 100-200 K, in qualitative agreement with high-T(c) cuprates' phenomenology, while pairing correlations are suppressed by static stripe inhomogeneities.     

Dielectric properties of Cu0.5Tl0.5Ba2Ca3Cu4O12−δ bulk superconductor

The dielectric properties of Cu_0.5Tl_0.5Ba₂Ca₃Cu₄O_12−δ superconductor samples were studied at 79 and 290 K by means of capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 kHz to 10 MHz. A negative capacitance (NC) phenomenon has been observed, which is most likely arising due to higher Fermi level of ceramic superconductor samples than metal electrodes. Also the NC may be due to the space charge located at the multiple insulator–superconductor interfaces (grain boundaries) in the materials. The negative dielectric constant (ε′) and loss factor (tan δ) show strong dispersion at low frequencies. The lower thermal agitation at 79 K may enhance the polarizability and hence the dielectric constants (ε′ and ε″).     

The role of Pb ions doping in the mechanism of chromate adsorption by goethite

Pure and 0.384% Pb²⁺ ions doped goethite samples were prepared in the laboratory by the coprecipitation method. The laboratory-prepared goethite samples were characterized for pH of point of zero charge (pH_pzc), surface area, XRD, TG-DTA, TEM, SEM and FTIR analysis, which suggest that the Pb²⁺ ions are incorporated into the crystals of goethite and are also present on the surface in the hydroxylated form. Chromate adsorption studies were carried out in the concentration range 0.25-2.01 mmol L⁻¹ at pH 3, 5 and 7, which show that maximum chromate is adsorbed at the lowest pH of 3 by both the samples of goethite. Effect of temperature on the adsorption of chromate, in the range 303-323 K, shows that the process of adsorption is endothermic in case of pure goethite and exothermic in case of Pb-doped goethite. The values of isosteric heat of adsorption were positive for pure goethite and negative for Pb-doped goethite, which are consistent with the effect of temperature on the process of adsorption. Langmuir isotherm was found applicable to the experimental data. FTIR analysis and equilibrium pH changes reveal that at pH 3 outersphere while at pH 5 and 7 innersphere complexation is the dominant mechanism for chromate adsorption by both the samples of goethite.     

Effect of tellurium on electrical and structural properties of sintered silicon nitride ceramics

The effects of tellurium (Te) additives on electrical conductivity, dielectric constant and structural properties of sintered silicon nitride ceramics have been studied. Different amounts of Te (10% and 20%) were added as sintering additives to silicon nitride ceramic powders and sintering was performed. Microstructure and composition were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The electrical conductivity and dielectric constant (ε′) increase exponentially with temperature greater than 800 K. The electrical conductivity and dielectric constant increase but activation energy decreases from 0.72 to 0.33 eV with the increase of Te concentration. However, the conductivity increases five orders of magnitude at the concentration of 10% of Te in Si₃N₄. As the Te concentration increases the sintered silicon nitride ceramics become denser. These types of samples can be used as high temperature semiconducting materials.     

Magnetohydrodynamic Stagnation Point Flow of a Maxwell Nanofluid with Variable Conductivity

This article reports the simultaneous properties of variable conductivity and chemical reaction in stagnation point flow of magneto Maxwell nanofluid.The Buongiorno's theory has been established to picture the inducement of Brownian and thermophrotic diffusions effects.Additionally,the aspect of heat sink/source is reported.The homotopic analysis method(HAM) has been worked out for the solution of nonlinear ODEs.The behavior of inferential variables on the velocity,temperature,concentration and local Nusselt number for Maxwell nanofluid are sketched and discussed.The attained outcomes specify that both the temperature and concentration of Maxwell fluid display analogous behavior,while the depiction of Brownian motion is quite conflicting on both temperature and concentration fields.It is further noted that the influence of variable thermal conductivity on temperature field is similar to that of Brownian motion parameter.Moreover,for the confirmation of our study comparison tables are reported.     

The Determination of 222Rn in Drilling Fluids of the KTB Pilot Borehole Using SSNTD Techniques

²²²Rn dissolved in drilling fluids of the KTB (Kontinentales Tiefbohrprogramm der Bundesrepublik Deutschland) pilot hole has been determined using solid state nuclear track detector (SSNTD) technique:The α-sensitive SSNTD CR-39 was used to measure the a-activity of ²²²Rn. Well-defined conditions for Rn-measurements could be established by employing a mica nuclear track microfilter to separate the detector containing air volume from the volume containing the water. This technique has been applied to determine quantitatively the ²²² Rn-concentration as a function of depth of the borehole down to 4000 m.     

Structural,electrical and optical properties of gamma irradiated methyl para-hydroxy benzoate single crystals

ABSTRACT

Nonlinear optical materials (NLO) have been garnering attention due to their role in optical data storage, optical communication and laser technology. Organic crystals have emerged as an extremely important class of NLO materials, since their NLO properties compare very well with traditional inorganic NLO materials like KCl, LiNbO₃, KDP (potassium dihydrogen phosphate), etc. They offer the additional advantage that they can be grown relatively inexpensively from solution close to room temperature, unlike the inorganic NLO materials which are grown from high temperature melts. In the present work, organic transparent single crystals of methyl para-hydroxy benzoate (MHB) were grown by slow evaporation solution growth technique (SEST) from aqueous solution at room temperature. The changes in structural, electrical and optical properties of gamma irradiated MHB single crystals were studied using X-ray diffraction (XRD), UV–Visible absorption spectroscopy, Photo-luminescence (PL), Fourier transform infrared (FTIR) spectroscopy and AC conductivity measurements at room temperature. The polished MHB single crystals were irradiated with gamma rays of doses 10 and 15 kilogray (kGy). From the XRD analysis, it was observed that gamma irradiation for these doses drastically decreases the crystallinity. The optical absorption constants were examined by UV-Visible absorption spectroscopy, measured over the wavelength range of 200–800?nm, at normal incidence. The optical band gap as estimated from the Tauc plot ((αhν)² vs hν) was found to be reduced with increasing gamma irradiation doses. PL spectra showed emission at wavelengths of 361?nm (3.43?eV) and 452?nm (2.74?eV), with enhanced intensities for the irradiated crystals. FTIR spectroscopy was utilised to identify the functional groups of MHB and indicated the rupture of specific types of bonds with gamma irradiation. Apart from that, the enhancement of AC conductivity with gamma irradiation was also observed for the gamma irradiated crystals.     

Near infrared to UV dielectric functions of Al doped ZnO films deposited on c-plane sapphire substrate using pulsed laser deposition

Transparent conducting polycrystalline Al-doped ZnO (AZO) films were deposited on sapphire substrates at substrate temperatures ranging from 200 to 300 °C by pulsed laser deposition (PLD). X-ray diffraction measurement shows that the crystalline quality of AZO films was improved with increased substrate temperature. The electrical and optical properties of the AZO films have been systematically studied via various experimental tools. The room-temperature micro-photoluminescence (µ-PL) spectra show a strong ultraviolet (UV) excitonic emission and weak deep-level emission, which indicate low structural defects in the films. A Raman shift of about 11 cm⁻¹ is observed for the first-order longitudinal-optical (LO) phonon peak for AZO films when compared to the LO phonon peak of bulk ZnO. The Raman spectra obtained with UV resonant excitation at room temperature show multi-phonon LO modes up to third order. Optical response due to free electrons of the AZO films was characterized in the photon energy range from 0.6 to 6.5 eV by spectroscopic ellipsometry (SE). The free electron response was expressed by a simple Drude model combined with the Cauchy model are reported.