Vapor pressure of selected aliphatic alcohols by ebulliometry. Part 2

Vapor pressures of six pentanols, 2-methyl-1-butanol (CAS Registry Number 137-32-6), 2-methyl-2-butanol (CAS Registry Number 75-85-4), 3-methyl-1-butanol (CAS Registry Number 123-51-3), 3-methyl-2-butanol (CAS Registry Number 598-75-4), 2-pentanol (CAS Registry Number 6032-29-7) and 3-pentanol (CAS Registry Number 584-02-1), were measured by the precision ebulliometry over an approximate pressure range from 9 to 99 kPa. The absolute uncertainties in pressure and temperature are estimated to be less than or equal to 7 Pa and 0.02 K, respectively. The results are represented by the Antoine equation and compared with available literature data.     

On the difference scheme for a nonlinear diffusion-reaction-type problem

Published in Lietuvos Matematikos Rinkinys, Vol. 33, No. 1, pp. 16–29, January–March, 1993.     

Non-uniqueness of the heat current operator and the hopping thermoelectric and Nernst-Ettingshausen effects in amorphous semiconductors

The Hardy correction in the heat current operator is generalized to the case of non-zero electron-phonon coupling constantg. It is then shown that not only the lowest (minus first) order but also the fist order contribution ing to the thermoelectric power of amorphous semiconductors in the hopping regime disappears. Consequently, since the lowest (zero) order contribution to the thermoelectric effects in the magnetic field yields no Nernst-Ettingshausen effect in these materials, the last effect is of the second order ing, at least.     

Spatial correlations and temperature dependence of the phonon-assisted hopping thermoelectric power in amorphous semiconductors

The assumption that the thermoelectric power of amorphous elemental semiconductors remains constant (in the hopping regime) down to zero temperature (which accords with some experiments on e.g. amorphous Ge performed above 100 K) is shown to be incompatible with the lowest order single-phonon hopping theory until the spatial interlevel correlations are taken into account.     

Potential formation in a bounded two-electron temperature plasma system with floating collector that emits electrons

Formation of the plasma potential in a plasma that contains energetic electrons and is bounded by a floating collector that emits electrons is studied theoretically. The problem is treated by a static. kinetic plasma-sheath model of Schwager and Birdsall [Phys. Fluids B2 (1990) 1057], which we have extended in order to include additional energetic electron population. The distribution of these electrons is assumed to be a high-temperature Maxwellian. They are called hot electrons. In the paper we study effects of the density and temperature of the hot electrons on the formation of the plasma potential. The model shows that for certain densities and temperatures of the hot electron population plasmas with two different plasma potentials can coexist in the system. These two plasmas are separated spatially by a double layer. For the case when there is no emission of electrons from the collector, results of the model are compared with computer simulation and very good agreement between the model and the simulation is found. The simulation also confirms existence of two plasmas with two different potentials separated by a double layer.