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In situ grazing incidence small-angle X-ray scattering analysis was successfully performed during the thermal processing of film blends of polymethylsilsesquioxane (PMSSQ) precursor and triethoxysilyl-terminated six-arm poly(epsilon-caprolactone) (mPCL6) porogen. In addition, thermogravimetric analysis of the films was carried out in a nitrogen atmosphere. These measurements provide important information about the structures of the blend films and of the resulting porous films. In particular, they are used in this paper to establish the mechanism of the formation of imprinted pores within the blend films. During the heating run, the sacrificial thermal degradation of the porogen component commenced at 320 degrees C, generating pores in the resulting cured PMSSQ films. Only very limited porogen aggregation occurred during the blend film formation process (spin-coating and subsequent drying), and these porogen aggregates were of relatively small size and narrow size distribution. The observed restriction of the formation of such porogen aggregates was found to result from the favorable hybridization reaction of the porogen's reactive end groups with the reactive functional groups of the PMSSQ precursor, which competes with aggregation via reaction between the porogen molecules. The average radius (or half-size) of the porogen aggregates was in the range 2.45-3.98 nm, depending on the porogen loading (10-40 wt %). The porogen aggregates retained their size and size distribution until thermal degradation, which resulted in the imprinting of nanopores in the cured PMSSQ films with size and size distribution corresponding to those of the porogen aggregates. The porosities of the resulting nanoporous films were in the range 12.4-41.7%, depending on the initial porogen loading.  相似文献   
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The crystal structure and thermal stability of two cadmium sulfide nanoclusters prepared in zeolite A (LTA) have been studied by XPS, TGA, and single-crystal and powder XRD. The crystal structures of Cd2.4Na3.2(Cd6S4)0.4(Cd2Na2S)0.6(H2O)> or =5.8[Si12Al12O48]-LTA (a = 12.2919(7) A, crystal 1 (hydrated)) and /Cd4Na2(Cd2O)(Na2O)/[Si12Al12O48]-LTA (a = 12.2617(4) A, crystal 2 (dehydrated)) were determined by single-crystal methods in the cubic space group Pm3m at 294(1) K. Crystal 1 was prepared by ion exchange of Na12-LTA in an aqueous stream 0.05 M in Cd2+, followed by washing in a stream of water, followed by reaction in an aqueous stream 0.05 M in Na2S. Crystal 2 was made by dehydrating crystal 1 at 623 K and 1 x 10(-6) Torr for 3 days. In crystal 1, Cd6S4(4+) nanoclusters were found in and extending out of about 40% of the sodalite cavities. Central to each Cd6S4(4+) cluster is a Cd4S4 unit (interpenetrating Cd2+ and S2- tetrahedra with near Td symmetry, Cd-S = 2.997(24) A, Cd-S-Cd = 113.8(12) degrees, and S-Cd-S = 58.1(24) degrees). Each of the two remaining Cd2+ ions bonds radially through a 6-ring of the zeolite framework to a sulfide ion of this Cd4S4 unit (Cd-S = 2.90(8) A). In each of the remaining 60% of the sodalite cavities of crystal 1, a planar Cd2Na2S4+ cluster was found (Cd-S/Na-S = 2.35(5)/2.56(14) A and Cd-S-Cd/Na-S-Na = 122(5)/92(7) degrees). Cd6S4(4+) and Cd2Na2S4+ are stable within the zeolite up to about 700 K in air. Upon vacuum dehydration at 623 K, all sulfur was lost (crystal 2). Instead as anions, only two oxide ions remain per sodalite unit. One bridges between two Cd2+ ions (Cd2O2+, Cd-O = 2.28(3) A) and the other between two Na+ ions (Na2O, Na-O = 2.21(10) A).  相似文献   
44.
We investigated the characteristics of a solution-processed indium-doped zinc oxide (In:ZnO) film formed via ion-beam (IB) irradiation as a liquid crystal (LC) alignment layer. The In:ZnO film was deposited using solution processing and cured at various temperatures. Uniform LC alignment was observed at all curing temperatures in cross-polarised optical microscopy images. A regular pre-tilt angle supported these results and showed homogeneous LC alignment. Several surface analyses were conducted to evaluate the effect of IB irradiation on the In:ZnO film surface. X-ray diffraction analysis showed an amorphous structure both before and after IB irradiation, and physical surface reformation was observed using atomic force microscopy. Root mean square surface roughness was reduced and a smooth surface was achieved after IB irradiation. X-ray photoelectron spectroscopy was used to detect chemical surface reformation. It was found that the IB irradiation broke the metal-oxide bonds and increased the occurrence of oxygen vacancies, which affected the van der Waals forces between the LC molecules and the In:ZnO film surface. Electrical performance was observed to identify the possibility of using the In:ZnO film in LC applications. Enhanced electro-optical performance was measured and zero residual DC voltage which was verified using a capacitance-voltage curve was achieved.  相似文献   
45.
In this study, we report the first production of two-dimensionally well-ordered molecular multilayers (i.e., with a well-defined molecular lamellar structure) based on the antiparallel beta-sheet chain conformation in thin films of a brush polypeptide, poly(S-n-hexadecyl-dl-homocysteine) (PHHC), through the use of a simple spin-coating process and the quantitative structural and property analysis of the thin films using a grazing incidence X-ray scattering technique combined with Fourier transform infrared spectroscopy and differential scanning calorimetry. These analyses provide detailed information about the structure and molecular conformation of the self-assembled lamellae in the PHHC thin film, which is not easily obtained using conventional techniques. Moreover, we used the in situ measurements carried out at various temperatures and the data analyses to establish mechanisms for the evolution of the self-assembled lamellar structures in the film and for their melting. In addition, we propose molecular structure models of the PHHC polymer molecules in the thin film at various temperatures.  相似文献   
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We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 °C) by RF sputtering. The films were subsequently annealed at 700 °C in N2 ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Current–voltage (IV) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 °C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode.  相似文献   
50.
Herein we report 22 acedan‐derived, two‐photon fluorophores with synthetic feasibility and full coverage of visible wavelength emission. The emission wavelengths were predicted by computational analysis, which enabled us to visualize multicolor images by two‐photon excitation with single wavelength, and to design a turn‐on, two‐photon fluorescence sensor for endogenous H2O2 in Raw 264.7 macrophage and rat brain hippocampus ex vivo.  相似文献   
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