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991.
Three Bi2Sr2Co2Oy thin films with different microstructures have been prepared by chemical solution deposition on LaAlO3(001) through varying the annealing temperature. With the decrease in the annealing temperature, both the size and c-axis alignment degree of grains in the film decrease as well, leading to an increase in the film resistivity. In addition, the decrease in the annealing temperature also results in a slight increase in the seebeck coefficient due to the enhanced energy filtering effect of small-grain film. The nanostructured Bi2Sr2Co2Oy film with the average grain size of about 100 nm shows a power factor comparable to that of the films with larger grains. Since the thermal conductivity of the nanostrcutured films can be depressed due to the enhanced phonon scattering by grain boundary, a higher figure of merit is expected in Bi2Sr2Co2Oy thin film with grains in nanometer size.  相似文献   
992.
The process of penetration of a projectile into a semi-infinitetarget is studied in this paper. Using certain assumptions, the propagation of plastic wave in the target is analyzed and the pressure on the surface of penetrator is given. The results calculated from the formulas of this paper agree well with experimental data and numerical results.  相似文献   
993.
The circular are corrugated diaphragins are taken in this paper and structures of several sections of the ring shells and a central cireular plale I matrices and link matrices are derived by using Prof. Chuen Hei-zang’s general the ring shell[1] and perturbation theory of the circular thin plates. Throngh the meined of matrices conjoint multiplication, the linear exact solution and nonlinear soluaen are obtained. The resutts agree with that of the experiments presented by W. A. Wildhack..  相似文献   
994.
磁过滤器电流对非晶碳薄膜摩擦学特性影响的研究   总被引:1,自引:0,他引:1       下载免费PDF全文
韩亮  杨立  杨拉毛草  王炎武  赵玉清 《物理学报》2011,60(4):46802-046802
研究了过滤阴极真空电弧技术中,不同的磁过滤器电流下(5—13 A),制备的四面体非晶碳(ta-C)薄膜对摩擦学特性的影响.通过对薄膜厚度,薄膜结构以及薄膜表面粗糙度随磁过滤电流的变化结果进行了测试,结果表明,随着磁过滤器电流的增大,薄膜的sp3键含量逐渐减少,表面粗糙度从0.13增大到0.38.磁过滤器电流在5 A时,薄膜的摩擦系数最小约为0.08,当电流增大到7 A时,摩擦系数显著增大,磁过滤器电流从7 A增大到13 A时,薄膜的摩擦系数再次减小约为0.1. 关键词: 四面体非晶碳 过滤阴极真空电弧 磁过滤器电流 摩擦系数  相似文献   
995.
A simple theoretical method is introduced for studying the interrelation between electronic and molecular structures.By diagonalizing the 120 × 120 complete energy matrices,the relationships between zero-field splitting(ZFS) parameter D and local distortion parameter △θ for Cr 3+ ions doped,separately,in α-and β-alums are investigated.Our results indicate that there exists an approximately linear relationship between D and △θ in a temperature range 4.2-297 K and the signs of D and △θ are opposite to each other.Moreover,in order to understand the contribution of spin-orbit coupling coefficient ζ to ZFS parameter D,the relation between D and ζ is also discussed.  相似文献   
996.
12 MeV electron beams with different doses of 4, 8, 16 and 32 Mrad from LINAC designed by Nanjing University have been used to irradiate polypropylene films and their structures studied by X-ray diffraction afterwards. We have found that the electron irradiation does not change the total crystallinity of polypropylene but greatly inflences its crystal structure with increase of phase and decrease of phase as irradiation dose increases (within 16 Mrad). However, it is unexpected that the structure of irradiated sample with 32 Mrad are similar to that of the control sample. This behavior has also been observed in positron annihilation lifetime measurements.  相似文献   
997.
With a high uniformity of x-ray preionization, a long pulse duration and a high specific energy (9 J l-1), an XeCl excimer laser output has been obtained by using a compact low inductance capacitor bank as the laser excitation circuit. The superior features of the low inductance capacitor bank (LICB) compared to the water transmission line (WTL) are attractive for repetitively pulsed XeCl excimer lasers.  相似文献   
998.
We present theoretical results of the electron impact ionization rate in GaAs/AlGaAs multiquantum well structures as a function of applied electric field for various geometries, i.e., well and barrier widths. In addition, we present preliminary measurements of the current-voltage characteristics of MBE grown devices which demonstrate very low leakage current as well as sharp breakdwon behavior. It is found that the net ionization rate, determined by averaging over the constitutent GaAs and AlGaAs layers, approaches the weighted average of the constituent bulk rates at high electric field strengths; the potential discontinuity is relatively unimportant. The electron ionization rate within the well regions alone is still higher than that in bulk GaAs, but is insufficiently enhanced to compensate for the much lower rate in the AlGaAs layers. As the field is lowered to 250.0 kV/cm, the average ionization rate in the multiquantum well structure becomes larger than in the bulk.  相似文献   
999.
1000.
在当前激光核聚变实验中,中子集中在短时间内出现、且产额低。为适应这种特点,要求探测器的效率高,分辨时间短。利用闪烁中子探测器探测激光核聚变所产生的中子,能测定中子产额,记录中子能量,而且探测效率高,分辨时间短。缺点是易受γ射线、X射线的干扰。  相似文献   
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