金膜上亚波长小孔阵列表面等离激元颜色滤波器偏振性质

金属薄膜上制备的表面等离激元颜色滤波器具有很强的颜色可调性. 在200 nm厚的金膜上, 通过聚焦离子束刻蚀, 制备一系列周期逐渐变化的圆形、方形、矩形亚波长尺寸小孔方阵列表面等离激元颜色滤波器, 改变入射光的偏振方向, 观察其超透射滤波现象. 研究发现: 对于矩形小孔阵列, 其透射光颜色随入射光偏振方向的变化而改变; 而对于圆形、方形的小孔阵列, 其透射光颜色对入射光的偏振方向并不敏感. 分析表明, 对于金膜上刻蚀的小孔结构, 虽然结构的周期性导致的表面等离激元极化子会对透射光的颜色变化产生一定影响, 但是随小孔形状变化的局域表面等离激元共振才是影响透射光颜色的决定性因素. 如果入射光没有在小孔中激发出局域表面等离激元, 则表面等离激元极化子对透射光的影响也会消失. 根据不同形状小孔周期结构透射光颜色随入射光的偏振变化特点, 制备出了包含两种小孔形状的复合周期结构. 随着入射光偏振方向的改变, 该结构会显示出不同的颜色图案. 关键词： 表面等离激元极化子 局域表面等离激元 颜色滤波器 亚波长小孔阵列     

Trapping of electromagnetic wave in single-negative metamaterial waveguides

We study the trapping properties of transverse magnetic (TM) waves in single-negative metamaterial waveguides including epsilon-negative (ENG) metamaterial and mu-negative (MNG) metamaterial. The relationship between effective refractive index and reduced core width is analyzed when the permittivities of ENG and MNG metamaterials are different, and the inflection on this curve can be regarded as the trapping point. Simulation results show that the properties in an ENG–MNG–ENG metamaterial waveguide are contrary to that in a MNG–ENG–MNG metamaterial waveguide. The sensitivity of trapping point to the change of permittivity makes the single-negative metamaterial waveguides to be an effective method to detect the permittivity variation and can be used as a new kind of waveguide sensor.     

Microstructure and properties of Nb/Ta multilayer films irradiated by a high current pulse electron beam

Nb/Ta multilayer films deposited on Ti6Al4V substrate with Nb and Ta monolayer thicknesses of 30 nm, 120 nm, and 240 nm were irradiated by a high current pulse electron beam (HCPEB) to prepare Nb-Ta alloyed layers. The microstructure and the composition of the outmost surface of melted alloyed layers were investigated using a transmission electron microscope (TEM) equipped with an X-ray energy dispersive spectrometer (EDS) attachment. The Ta content of the alloyed surface layer prepared from the monolayer of thickness 30 nm, 120 nm, and 240 nm was ～ 27.7 at.%, 6.37 at.%, and 0 at.%, respectively. It was found that the Ta content in the alloyed layer plays a dominant role in the microstructure of the films. The hardness and the wear rate of the alloyed layers decrease with the increasing content of Ta in the surface layer.     

Multiwavelength Raman fiber lasers with equalized peak power using a sampled chirped fiber Bragg grating

Two novel multiwavelength Raman fiber lasers using a ring cavity and a linear cavity are proposed and demonstrated experimentally. Both laser configurations include a sampled chirped fiber Bragg grating used in the reflection mode. By adjusting the polarization controller (PC) in the cavities, up to ten stable lasing wavelengths with 0.8 nm spacing and equalized peak power are achieved at room temperature. It is observed that the output spectrum depends upon which port of the grating is connected to the cavity. These two fiber ring lasers offer advantages such as, stable room temperature operation, simple structure, low loss, multiwavelength lasing lines with moderate output power. PACS 42.55.Wd; 42.55.Ye; 42.81.-i     

Solution of a Duffing-harmonic oscillator by the method of harmonic balance

The first-order harmonic balance method via first Fourier coefficient is used to construct an approximate frequency-amplitude relation for a Duffing-harmonic oscillator. This relation is in agreement with the result obtained by the Ritz procedure.     

Ultrafast motion of liquids C2H4Cl2 and C2H4Br2 studied with a femtosecond laser

Transient optical Kerr effect of liquids C₂H₄Cl₂ and C₂H₄Br₂ is investigated, for the first time to our knowledge, with a femtosecond (fs) probe laser delayed with respect to a coherent fs pump laser. Coherent coupling and electronic Kerr signals are observed around zero delay when pump and probe overlap. Persisting after the pump-probe overlap are Kerr signals arising from the torsional and other intramolecular vibrations of the trans and gauche conformations; Kerr signals arising from the intermolecular motion are also observed. Vibrational quantum interference is only observed in liquid C₂H₄Br₂ and the related beats data are fitted with the torsional vibrations, 91 cm⁻¹ (gauche) and 132 cm⁻¹ (trans), and the CCBr angle-bending vibrations, 231 cm⁻¹ (gauche) and 190 cm⁻¹ (trans), with dephasing times, 0.45 ps, 0.45 ps, 2 ps, and 1.5 ps, respectively. These vibrational frequencies agree with those obtained in the frequency-domain. That no vibrational mode is observed for C₂H₄Cl₂ might be attributed to ineffective Raman-pumping. Kerr signals observed after the pump-probe overlap are Fourier transformed to give the spectra of the intermolecular motion and the vibrational spectrum, which agrees with the one observed in the infrared absorption and/or Raman scattering heretofore.     

Cu2O/Ag复合物的合成及SERS原位分析其可见光催化降解活性

A multifunctional Cu₂O/Ag micro-nanocomposite, which has the characteristics of high catalytic activities under the visible light and high surface-enhanced Raman scattering (SERS) activity, was fabricated via a facile method and employed for the in situ SERS monitoring of the photocatalytic degradation reaction of crystal violet. Through the variation of the AgNO₃ concentration, Ag content on the Cu₂O template can be controllably tuned, which has great influence on the SERS effect. The results indicate that Ag nanoparticles form on the Cu₂O nanoframes to obtain the Cu₂O/Ag nanocomposite, which can act as an excellent bifunctional platform for in situ monitoring of photocatalytic degradation of organic pollutions by SERS.     

基于密度泛函理论的叶绿素A性质的研究

在液相环境中,采用密度泛函理论(DFT)、含时密度泛函理论(TD-DFT)、Multiwfn波函数分析软件,在pbepbe/6-311g(d)基组水平上,计算并分析了叶绿素A的结构、紫外光谱和电子—空穴分布,结果表明:pbepbe/6-311g(d)方法是计算叶绿素A紫外吸收光谱更精确的方法;叶绿素A分子的吡咯环与取代基相互作用的过程中,吡咯环Ⅳ受侧链"尾巴"的影响最大;理论计算的紫外光谱与实验数据吻合较好,其中635.71 nm和446.87 nm处的两个吸收峰可认为是叶绿素A的特征吸收峰;侧链或取代基团在叶绿素A激发过程中是给电子体,卟啉"头"既是电子供体,也是电子受体.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

All-electrical control of single ion spins in a semiconductor

We propose a method for all-electrical manipulation of single ion spins substituted into a semiconductor. Mn ions with a bound hole in GaAs form a natural example. Direct electrical manipulation of the ion spin is possible, because electric fields manipulate the orbital wave function of the hole, and through the spin-orbit coupling the spin is reoriented as well. Coupling ion spins can be achieved using gates to control the size of the hole wave function. Coherent manipulation of ionic spins may find applications in high-density storage and in scalable coherent or quantum information processing.