Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.     

金属催化制备石墨烯的研究进展

石墨烯作为一种新兴的碳素材料,从一出现就引起了众多学者的关注.石墨烯具有许多新奇的特性,使得石墨烯在光电领域及微电子工业等有极大的应用潜力.但是目前难以实现大尺寸、高质量、宏量石墨烯的可控制备,限制了石墨烯的广泛应用.本文分析了各种石墨烯制备方法的利弊,重点从层数控制及大面积制备等方面对金属催化法进行了阐述,固态碳源金属催化法可以实现宏量制备大尺寸、高质量、薄且均匀的石墨烯.综述了金属催化制备石墨烯的相关机理研究,指出了目前研究的局限,并对石墨烯相变机理的下一步研究方向进行了展望.     

季节因素对气候网络影响研究

气候网络在地球科学领域研究中是一个新的热点,对于分析和揭示气候场的特征及关联结构具有较强优势.已有气候网络的构建一般选取冬季月份的样本数据,而且在研究中忽略了其他季节月份对气候网络的影响.本文研究了季节因素对气候网络的影响,研究发现:气候网络在不同季节的整体特征参数基本保持稳定,但是网络社团结构以及局部节点拓扑连接随季节变化显著.可以利用这一结论来研究不同季节全球遥相关模态变化情况以及局部地区气候特征随季节变化情况.     

基于背景光调制的复合光傅里叶变换轮廓术

提出一种基于背景光调制的用于傅里叶变换轮廓术测量范围的复合光栅,该光栅通过调制一正弦条纹和不含任何相位信息的背景光来抑制零频,较基于相移技术的复合光栅有更大的优势:背景光只含直流分量,使得复合光栅的频谱更加简单,有利于滤出载波信息,提高测量精度;对从复合光栅中解调出来的背景光只涉及平均值校准,校准过程更为简单;解调出的背景光与物体表面的反射率成正比,具有潜在的应用价值。采用Matlab程序对该复合光栅进行了数值模拟,并对该光栅实用性进行了实验研究,结果证实了该光栅用于抑制零频、扩大傅里叶变换轮廓术测量范围的有效性,且提高了测量精度。     

飞秒激光低压N2等离子体特性的实验研究

在低于一个标准大气压的条件下对飞秒激光产生的N₂等离子体光谱进行了实验研究.结果表明, 各种样品气压下的激光N₂等离子体光谱均表现为连续谱和线状谱的叠加.随着样品气压的降低, 连续谱和原子谱线的强度经历了由缓慢增强发展为缓慢降低再到迅速降低的过程, 而正一价离子谱线强度呈现逐步增强的特征.在气压低于0.3 atm (1 atm=101325 Pa)时, 出现了正二价态的离子谱线. 给出了低压N₂等离子体对于飞秒激光传输和能量吸收的物理特性, 并初步讨论了低压等离子体通道特性.这些结果有助于加深了解飞秒激光等离子体的特性和机理, 特别是给出了在实验上测量不同价态离子光谱的条件, 为今后的研究提供了有益的实验依据. 关键词： 飞秒激光 气压 等离子体光谱 激光传输     

具有非均匀渐变界面DBR的光学特性分析

应用特征矩阵法研究了非均匀渐变界面Al_0.9Ga_0.1As/Al_yGa_1-yAs/GaAs/Al_xGa_1-xAs DBR的光学特性.建立了非均匀渐变界面Al_yGa_1-yAs的折射率模型，并得到了渐变界面特征矩阵的解析解，通过特征矩阵法分别计算了突变GaAs/Al_0.9Ga_0.1As DBR和渐变DBR的反射谱和反射相移，分析了非均匀渐变层对DBR光学特性的影响，对渐变DBR，需要在DBR前面再增加一定厚度的非均匀渐变相位匹配层才能使整个DBR满足中心波长相位匹配条件，并通过光学厚度近似方法求出相位匹配层厚度. 关键词： DBR 反射谱 反射相移 特征矩阵法     

Electro-optic detection of femtosecond electromagnetic pulses by use of poled polymers

We report the generation and coherent detection of freely propagating ultrashort baseband electromagnetic pulses. Using optical rectification in ?110? GaAs for wideband emission and electro-optic sampling in a poled polymer for wideband detection, we demonstrate spectral sensitivity that extends from the far infrared (lambda~100 mum) to ~33 THz(lambda = 9 mum) . Over a band of nearly 20 THz, a relatively flat frequency response is observed. We discuss issues that limit the response bandwidth.     

Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.     

The Level-split of the Two-level Entangled Atom in an Optical Field

The behavior of a two-level entangled atom in an optical field with circular polarization is studied in this paper. The interaction of an optical field and one of the entangled atoms is analyzed in detail. A general solution of the SchrAo¨Gdinger equation about the motion of the entangled atom is obtained. The properties of the action are dependent on the initial state of the atom. By detecting the entangled atom out of the field, we can obtain the state of the other atom moving in the field. It is shown that the state of the atom out of the field will influence the energies of the split-levels of the atom in the field.