Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

C波段加速器初步热测实验

为了开展加速器小型化技术研究,进行了C波段2 MeV驻波加速器研制工作。目前,该加速器研制取得了显著进展,完成了全密封加速管的焊接,建立了加速器热测实验平台。在重复频率50 Hz情况下,进行了初步热测出束实验,利用电离室剂量仪测试了加速器靶前1 m处的X射线剂量率,并利用钢吸收法测试了电子束的能量。初步实验结果表明:电子束能量约2.5 MeV,剂量率超过330 mGy/(minm)。     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

低气压条件下氢气潘宁放电的模拟分析

为更好地理解低气压、弱电离条件下潘宁离子源放电过程中离子和电子的动力学行为, 通过建立二维轴对称模型, 采用粒子模拟与蒙特卡罗相结合(PIC/MCC)的方法, 考虑了电子与氢气之间的弹性碰撞、激发、电离以及氢原子、离子之间的弹性碰撞和电荷交换等过程, 对微型氢气潘宁离子源放电和引出过程进行了数值研究. 考察了磁场位形、壁面二次电子发射系数、引出电压和充气压力对放电过程的影响, 得到了实验中难以诊断得到的放电腔内电子与离子数密度分布, 阳极电流、引出极离子电流、单原子氢离子比例和双原子氢离子比例等宏观参数与实验结果相一致. 通过仿真使得对氢气潘宁放电机制的研究从定性过渡到定量, 这对于潘宁离子源的设计和改进具有重要意义. 关键词： 潘宁放电 氢气 粒子模拟 蒙特卡罗     

Spiking patterns of a hippocampus model in electric fields

We develop a model of CA3 neurons embedded in a resistive array to mimic the effects of electric fields from a new perspective. Effects of DC and sinusoidal electric fields on firing patterns in CA3 neurons are investigated in this study. The firing patterns can be switched from no firing pattern to burst or from burst to fast periodic firing pattern with the increase of DC electric field intensity. It is also found that the firing activities are sensitive to the frequency and amplitude of the sinusoidal electric field. Different phase-locking states and chaotic firing regions are observed in the parameter space of frequency and amplitude. These findings are qualitatively in accordance with the results of relevant experimental and numerical studies. It is implied that the external or endogenous electric field can modulate the neural code in the brain. Furthermore, it is helpful to develop control strategies based on electric fields to control neural diseases such as epilepsy.     

双偏振结构保偏光纤偏振器的研制

提出了保偏光纤偏振器的一种串联结构,即双偏振结构,报道了研制的结果。并通过对单偏振结构和双偏振结构器件测试结果的比较,得出双偏振结构的保偏光纤偏振器可使器件达到高消光比,并且有稳定的温度特性。     

Palladium-catalyzed chemoselective direct α-arylation of carbonyl compounds with chloroaryl triflates at the C–Cl site

This study described palladium-catalyzed chemoselective direct α-arylation of carbonyl compounds with chloroaryl triflates in the Ar–Cl bond. The Pd/SelectPhos system showed excellent chemoselectivity toward the Ar–Cl bond in the presence of the Ar–OTf bond with a broad substrate scope and excellent product yields. The electronic and steric hindrance offered by the –PR₂ group of the ligand with the C2-alkyl group was found to be the key factor affecting the reactivity and chemoselectivity of the α-arylation reaction. The chemodivergent approach was also successfully employed in the synthesis of flurbiprofen and its derivatives (e.g., –OMe and –F).

Palladium-catalyzed chemoselective direct α-arylation of carbonyl compounds with chloroaryl triflates in the Ar–Cl bond is reported. The effects of –PR₂ and C2-alkyl groups of the ligands are investigated using experimental and computational methods.     

Defect-induced failure of optical coating filters

Optical filters composed of Ag, Al₂O₃, and ZnSe films were prepared on BK7 substrates by evaporation. By employing spectrophotometer, microscope, scanning electron microscope (SEM), and energy dispersive spectrum (EDS) analysis, the moisture-dependent stability of the samples was tested. The experimental results revealed that filter failure often occurs initially at defect sites. Small sputtering particles and pinhole are found to be two types of defects that induced the optical coating filter failure. The mechanisms of the defect-induced failure of the filters also are discussed in the article.     

加强型Bi-2212超导股线有限元拉伸性能分析

为探究加强型Bi-2212超导股线的力学性能以及不锈钢包带对超导股线力学性能的影响,运用Ansys软件建立加强型Bi-2212超导股线的三维模型,采用有限元分析方法,对其机械结构进行仿真,模拟高温高压热处理后轴向受拉形变量和应力应变分布情况。仿真结果显示,在同样施加100 N拉力的情况下,与超导原线（Bi-2212超导线）相比,密绕Ni₈₀Cr₂₀包带后的加强型Bi-2212超导股线轴向受拉形变程度减小,约10%;应力应变均降低,约30%。采用Ni₈₀Cr₂₀作为外包带制成的加强型Bi-2212超导股线力学性能显著,是未来超导线发展方向之一。