Enthalpies of addition of radicals to aldehydes, ketones, acids and esters

Enthalpies of the addition of radicals HO^•, HO₂ ^•, CH₃ ^•, CH₃O^•, CH₃O₂ ^• to the C=0 bond of model aldehydes, ketones, acids and esters have been calculated by thermodynamic and quantum chemical methods. It has been shown that the exothermic effect of these reactions decreases in the row HO^•>CH₃O^•>CH₃ ^•>HOO^•>CH₃OO^•.     

Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO<Subscript>2</Subscript>

The photoluminescence intensity (PLI) related to Si nanocrystals in a SiO₂: nc-Si system synthesized by ion implantation is studied experimentally and theoretically as a function of the Si+ ion dose at various annealing temperatures T_ann (1000–1200°C). The dose corresponding to the maximum PLI is found to decrease with increasing T_ann. These data are explained in terms of a model taking into account the coalescence of neighboring nanocrystals and the dependence of the probability of radiative recombination of quantum dots on their size. It is found that, when silicon oxide is grown in a wet atmosphere, the photoluminescence spectrum contains an additional band (near 850 nm), which is related to shells around the nanocrystals. This band weakens abrupily after high-temperature annealing in an oxidizing atmosphere (air).     

Polarized deuterons and protons at NICA@JINR

The novel scheme of proton and deuteron polarization control in the NICA collider at Dubna is proposed. By means of two Siberian Shakes with solenoid magnetic field the beam spin tune is shifted to the “zero” spin resonance vicinity, whereas manipulation of the polarization is realized by “weak” field solenoids. The scheme makes it possible to obtain any desired direction of the polarization in the both MPD and SPD detectors for any sort of the particles. The possibility of the beam polarization control in the orbit plane at any azimuth of the collider magnetic arcs exists also. The last gives necessary flexibility of optimal matching the beam polarization at injection into collider and at the polarimetery monitor points.     

Synthesis of 6-Alkoxy- and 1,6-Dialkoxy-4-amino-1-aryl-3-oxo-2,3-dihydro-1H-pyrrolo[3,4-c]pyridine-7-carbonitriles

Russian Journal of Organic Chemistry - Base-catalyzed reaction of 3-aroyl-6-halopyridine-3,5-dicarbonitriles with alcohols involved successive regioselective pyrrole ring fusion at the pyridine [c]...     

Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in SiO2 and Al2O3 matrices

Physics of the Solid State - A comprehensive comparative study of SiO2 and Al2O3 oxide layers with Si nanocrystals formed by Si+ ion implantation and high-temperature annealing has been performed....     

Mechanisms of Current Transport and Resistive Switching in Capacitors with Yttria-Stabilized Hafnia Layers

Technical Physics - The peculiarities of resistive switching in capacitors with yttria-stabilized hafnia layers were studied. The characteristics of current transport in the initial state and after...     

Source and coefficient identification problems for the wave equation on graphs

Avdonin and Kurasov proposed a leaf peeling method based on the boundary control to recover a potential for the wave equation on a tree. Avdonin and Nicaise considered a source identification problem for the wave equation on a tree. This paper extends the methodology to the wave equation with unknown potential and source distributed parameters defined on a general tree graph.     

Luminescence and structure of nanosized inclusions formed in SiO2 layers under double implantation of silicon and carbon ions

Luminescent and structural characteristics of SiO₂ layers exposed to double implantation by Si⁺ and C⁺ ions in order to synthesize nanosized silicon carbide inclusions have been investigated by the photoluminescence, electron spin resonance, transmission electron microscopy, and electron spectroscopy methods. It is shown that the irradiation of SiO₂ layers containing preliminary synthesized silicon nanocrystals by carbon ions is accompanied by quenching the nanocrystal-related photoluminescence at 700–750 nm and by the enhancement of light emission from oxygen-deficient centers in oxide in the range of 350–700 nm. Subsequent annealing at 1000 or 1100°C results in the healing of defects and, correspondingly, in the weakening of the related photoluminescence peaks and also recovers in part the photoluminescence of silicon nanocrystals if the carbon dose is less than the silicon dose and results in the intensive white luminescence if the carbon and silicon doses are equal. This luminescence is characterized by three bands at ～400, ～500, and ～625 nm, which are related to the SiC, C, and Si phase inclusions, respectively. The presence of these phases has been confirmed by electron spectroscopy, the carbon precipitates have the sp ³ bond hybridization. The nanosized amorphous inclusions in the Si⁺ + C⁺ implanted and annealed SiO₂ layer have been revealed by high-resolution transmission electron microscopy.