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131.
The influence of external uniaxial stress on the different indium-donor complexes in silicon has been studied using the perturbed γγ angular correlation (PAC) method. Such effect of an applied stress is detected by means of the probe atoms situated at different complexes in the sample. The current results showed that the responses of the probes in an extrinsic silicon samples are found to be dissimilar for the same value of stress. Such change in the local environments of the probe atoms could be associated with the various strain field created by the implantations of varied size of impurities. The phosphorous implantation in silicon has even lead to the complete absence of observable effect of the applied stress suggesting significant lose of the elasticity of the sample.  相似文献   
132.
133.
We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τs300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τs is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τs in non-degenerate lightly n-type Hg0.78Cd0.22Te of approximately the same band gap as InSb, and find that τs varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τs, imply that the Elliott–Yafet model dominates in these materials.  相似文献   
134.
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.  相似文献   
135.
136.
The ageing effect is studied analytically in a disordered quantum system interacting with its surroundings and subjected to an external ac magnetic field. Energy dissipation is due to the interaction of the system with a set of independent harmonic oscillators, imitating a quantum thermal bath. Dynamic equations for the autocorrelation function and linear-response function are derived using the method of closed-path integrals. The effect of an external field is studied on the correlation function and response in the spin-glass and paramagnetic phases. Both functions are found to depend on the spin interaction strength.  相似文献   
137.
The properties of nonrectifying AuGe/GaAs (Al0.4Ga0.6As) contacts exposed to heat treatment, 60Co γ radiation, and γ radiation combined with the application of an electrical bias are studied. A correlation between the type of interfacial interaction in the contacts and their resistance is found. Results obtained are explained in terms of a diffusion model with a movable boundary of the metal layer.  相似文献   
138.
The method that we previously developed for going over from double volume integrals to double surface integrals in calculating the Coulomb energy of nuclei that have a sharp surface is generalized to the case of nuclei where the range of nuclear forces is finite and where the nuclear surface is diffuse. New formulas for calculating the Coulomb and the nuclear energy of deformed nuclei are obtained within this approach. For a spherically symmetric nucleus, in which case there is an analytic solution to the problem in question, the results are compared with those that are quoted in the literature, and it is shown that the respective results coincide identically. A differential formulation of the method developed previously by Krappe, Nix, and Sierk for going over from double volume integrals to double surface integrals is proposed here on the basis of the present approach.  相似文献   
139.
The motion of the front of crystallization and the growth of a film at the surface of a plate are analyzed in the case of a laminar and in the case of a turbulent flow mode. Conditions are determined under which there occurs a transition from a matt inhomogeneous structure to a transparent homogeneous structure of ice. It is shown that, for a film to be steadily preserved at the plate surface, the film thickness must be larger than a critical equilibrium-thickness value h b.c, in which case a transparent homogeneous structure of ice is formed. Otherwise, the film at the plate surface is unstable and disappears in the course of time. The icing of aircrafts is the most important application of the results obtained in this study.  相似文献   
140.
A series of sulfonated poly(aryl ether ketone)s (SPAEKs) were prepared by aromatic nucleophilic polycondensation of 2,6‐dihydroxynaphthalene with 5,5′‐carbonyl‐bis(2‐fluorobenzenesulfonate) and 4,4′‐difluorobenzophenone. The structure and degree of sulfonation (DS) of the SPAEKs were characterized using 1H NMR spectroscopy. The experimentally observed DS values were close to the expected values derived from the starting material ratios. The thermal stabilities of the SPAEKs were characterized by thermogravimetric analysis, which showed that in acid and sodium salt forms they were thermally stable in air up to about 240 and 380 °C, respectively. Transparent membranes cast from the directly polymerized SPAEKs exhibited good mechanical properties in both dry and hydrated states. The dependence of water uptake and of membrane swelling on the DS at different temperatures was studied. SPAEK membranes with a DS from 0.72 to 1.60 maintained adequate mechanical properties after immersion in water at 80 °C for 24 h. The proton conductivity of SPAEK membranes with different degrees of sulfonation was measured as a function of temperature. The proton conductivity of the SPAEK films increased with increased DS, and the highest room temperature conductivity (4.2 × 10?2 S/cm) was recorded for a SPAEK membrane with a DS of 1.60, which further increased to 1.1 × 10?1 S/cm at 80 °C. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 2866–2876, 2004  相似文献   
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