红外偏振成像对伪装目标的探测识别研究

针对目前普通光电成像系统对伪装目标的探测和识别概率较低的状况,提出伪装目标的探测识别新技术研究。介绍了红外偏振成像系统的原理、组成和特点,研制的中波/长波红外偏振成像装置,其波段范围为3 m ~5 m和8 m~12 m,线偏振度95%,消光比大于100∶1,给出了试验分析数据和偏振融合效果图。研究表明,采用红外偏振成像技术可以有效地实现对地面伪装目标的探测和识别。研究结果还可以扩展到对人工假目标、空中隐身目标等的探测和识别。     

Biomimetic compound eye with a high numerical aperture and anti-reflective nanostructures on curved surfaces

Biomimetic compound eyes with a high numerical aperture on a curved surface were successfully fabricated by intelligent integration of traditional top-down and bottom-up micro- and nanofabrication methods together. In addition, the new hybrid micro- and nanofabrication method allows us to fabricate the antireflective nanostructures on each ommatidium to increase its vision sensitivity by improving the light transmission. The fabricated compound eye was optically characterized and was shown to have a numerical aperture of 0.77 for each ommatidium. Furthermore, it is shown that the transmission of the compound eye can be improved by 2.3% for the wavelength of 632.8 nm and a clearer image can be formed by the fabricated compound eye with antireflective nanostructures compared with that without antireflective nanostructures. In addition, the developed hybrid manufacturing method can be adapted to the fabrication of other complex micro- and nanodevices for photonics or other research areas.     

不同应用条件下最佳绝缘子构型

绝缘子的沿面闪络制约着脉冲功率系统向高电压、大电流方向发展,总结了几种实际应用条件下的最佳绝缘子构型,并对不同角度下绝缘子表面的带电情况进行了分析。结果表明,表面电荷对不同绝缘子构型的性能起着至关重要的作用,需要根据不同的应用条件来开展实验研究以确定最佳的绝缘子构型。     

2D parameter optimization of Ne-like Cr x-ray laser on slab

A method of studying a non-equilibrium x-ray laser plasma is developed by extending the existing one-dimensional similarity equations to the case of two-dimensional plasma study in the directions perpendicular to the slab and along a focal line. With this method the characteristics of pre-plasma are optimized for transient neon-like Cr x-ray laser. It is found that when the duration and the intensity of 1.053μm pre-pulse are 1.2ns and 6.5 TW/cm² respectively with a delay time of 1.5ns, the temperature and the temperature discrepancy each approach a proper state, which will provide a uniform distribution of properly ionized neon-like Cr ions before the arrival of pumping pulse.     

Co掺杂MgF2电子结构和光学特性的第一性原理研究

基于密度泛函理论（DFT）的第一性原理平面波超软赝势方法,计算了Co掺杂MgF₂晶体的几何结构、电子结构和光学性质.结果表明,Co掺杂导致MgF₂晶体结构畸变,可能发生一种类四方和斜方型结构相变.由于Co原子的加入,体系的禁带宽度减小,可观察到半导体—金属性转变.计算也表明,Co掺杂对静态介电常数和光吸收系数有重要调制作用,所得结果与最近实验测量很好相符,揭示了Co:MgF₂体系在光学元器件方面的潜在应用. 关键词： 密度泛函理论（DFT） 第一性原理 超软赝势 2')" href="#">Co掺杂MgF₂     

Improved λ/4 phase-shifted DFB semiconductor laser with spatial hole burning compensation using grating chirp

A λ/4 phase-shifted distributed feedback (DFB) semiconductor laser with a preformed chirped grating used to compensate the spatial hole burning (SHB) induced index change is proposed and analyzed. It shows that compared with the three phase shifted DFB laser which is known for its good performance to eliminate SHB, the proposed SHB compensated laser has better single longitudinal mode property, narrower spectral linewidth and better dynamic characteristics.     

Improving histogram-based image contrast enhancement using gray-level information histogram with application to X-ray images

Many applications of histogram-based techniques for the purposes of image enhancement are well known. However, these techniques often fail to produce satisfactory results for a broad variety of low-contrast images (e.g., X-ray images). In this paper, we propose a new form of histogram for image contrast enhancement. The input image is first divided into several equal-sized regions according to the intensities of gradients, their corresponding statistical values of gray levels are then modified respectively, and finally the processed histogram for the whole image is obtained by the summation of all the weighted values of regions. The fundamental characteristic of this new form of histogram is that the amplitudes of its components can objectively reflect the contribution of the gray levels to the representation of image information. Accordingly, this new histogram is called gray-level information histogram. The performance of many histogram-based enhancement techniques might be improved dramatically using the proposed histogram. Testing on the X-ray images validates the effectiveness of the new histogram.     

基于多种群混沌遗传神经网络的模拟电路故障诊断

针对标准遗传算法优化BP神经网络收敛慢,易陷入局部最优的问题,提出了改进的多种群协同进化遗传算法,该算法改变了以往的随机初始化方法,采用了附加混沌扰动的tent映射初始化均匀分布的种群,提高了初始解的质量;每个种群采用自适应交叉率和变异率,引入移民算子实现种群间的横向联系;算法通过多种群的协同进化和种群间的个体移植提高了算法的搜索均匀性和效率;仿真实验表明该算法误差小,收敛速度快,诊断正确率高,较好地解决了模拟电路的软故障诊断问题。     

Ionic liquid-assisted hydrothermal synthesis of dendrite-like NaY(MoO4)2:Tb phosphor

Micro-sized NaY(MoO₄)₂:Tb³⁺ phosphors with dendritic morphology was synthesized by a ionic liquid-assisted hydrothermal process. X-ray diffraction (XRD) indicated that the as-prepared product is pure tetragonal phase of NaY(MoO₄)₂. Field emission scanning electron microscopy (FE-SEM) images showed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors have dendritic morphology. The photoluminescent (PL) spectra displayed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors show a stronger green emission with main emission wavelength 545 nm corresponding to the ⁵D₄→⁷F₅ transition of Tb³⁺ ion, and the optimal Tb³⁺ doping concentration for obtaining maximum emission intensity was confirmed to be 10 mol%. Based on Van Uitert's and Dexter's models the electric dipole–dipole (D–D) interaction was confirmed to be responsible for the concentration quenching of ⁵D₄ fluorescence of Tb³⁺ in the NaY(MoO₄)₂:Tb³⁺ phosphors. The intrinsic radiative transition lifetime of ⁵D₄ level is found to be 0.703 ms.     

Preparation of Nd-doped BiFeO3 films and their electrical properties

The Nd-doped BiFeO₃ thin films were prepared on SnO₂(FTO) substrates spin-coated by the sol–gel method using Nd(NO₃)₃·6H₂O, Fe(NO₃)₃·9H₂O and Bi(NO₃)₃·5H₂O as raw materials. The microstructure and electric properties of the BiFeO₃ thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO₃ films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi_0.85Nd_0.15FeO₃ films gives rise to the largest Pr of 64 μC/cm². The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi_0.85Nd_0.15FeO₃ thin film at 10 kHz are 190 and 0.017 respectively.