Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

Flow regime identification in a two-phase flow using wavelet transform

This study addresses the problem of the automatic flow regime identification in two-phase flows in pipes. A novel wavelet transform-based approach is proposed and validated using time series of differential pressure fluctuations. The experimental data on the differential pressure measured in a vertically installed Venturi meter for air-water flow were analyzed and found to be appropriate for flow regime identification. The wavelet spectrum of the measured signal is shown to characterize the flow patterns completely, and the vector of the wavelet variances is proposed as the characteristic vector for use in an on-line flow regime identification system.     

Inclusion of carbon nanotubes in a TiO2 sol-gel matrix

We report here the successful inclusion of carbon nanotubes (CNs) into a TiO₂ matrix prepared by a sol-gel method. The presence of CNs in the sol-gel matrix and the structure of the film were analyzed principally by transmission electron microscopy. Complementary information about the behavior of embedded carbon nanotubes versus heat treatment and ion irradiation were obtained by X-ray photoelectron spectroscopy. The elaboration of an inorganic matrix containing embedded carbon nanotubes leads to a new nanocomposite. The possible applications of this nanocomposite are discussed.     

Effect of trapping centers of luminescent properties of bismuth orthogermanate

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.     

Magnetic charge type equations from torsion

It is shown that torsion can be built from two independent vector fields, and that these vector fields obey, for the Lagrangian chosen, the equations of electromagnetism with magnetic charge from the two photon formalism. The equation of motion follows from the Bianchi identity ofU ₄ spacetime, and finally the interpretation of these fields is discussed.     

Fluorescence spectra of different configurations of the diphenyl molecule in solid paraffin solutions

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 51, No. 2, pp. 212–217, August, 1989.     

Positive definite functions on the Heisenberg group

Work supported in part by the NSF     

Absence of shocks in an initially dilute collisionless plasma

The Cauchy Problem for the relativistic Vlasov-Maxwell equations is studied in three space dimensions. It is assumed that the initial data satisfy the required constraints and have compact support. If in addition the data have sufficiently smallC ² norm, then a uniqueC ¹ solution to this system is shown to exist on all of spacetime.Research supported in part by NSF DMS 85-20662 and NSF DMS 84-20957     

一种时延范德波尔电磁系统中的复杂行为(Ⅱ)——时空混沌图案动态

对于一个由线性无损传输线加非线性边界条件组成的简单无穷维电磁系统，应用行波理论确定了电压反射波的局部映射关系.数值仿真结果表明，当系统参数发生变化时，传输线沿线电压存在着非常丰富的时空非线性现象.通过描绘出空间振幅变化图和时空行为发展图，定性分析了传输线沿线电压的时空混沌图案动态，为研究和理解时空混沌提供了一种良好的可求解模型. 关键词： 图案 时空混沌 无穷维系统 时延范德波尔电磁系统