基于横向莫尔条纹的自准直测角方法

本文提出了基于横向莫尔条纹的自准直测角方法,用遮光原理分析了莫尔条纹的位移放大作用.并基于该方法搭建了原理光路,得到的莫尔条纹信号稳定且能够满足测量需求.在此基础上对系统进行了定量标定,简化了数据处理步骤,实现了动态测量,系统分辨率达到10″,进一步明确将该方法应用到自准直仪中可以有效提高仪器分辨率.     

单位球面中极小子流形的曲率拼挤

本文证明了单位球面中极小子流形的一些拼挤定理,特别注意到单位球面中的极小超曲面、给出了截曲率的拼挤常数,我们也改进了由Ｎ．Ｅｊｉｒｉ得到的Ｒｉｃｃｉ曲率拼挤常数。     

A splitting preconditioner for saddle point problems

For large sparse systems of linear equations iterative techniques are attractive. In this paper, we study a splitting method for an important class of symmetric and indefinite system. Theoretical analyses show that this method converges to the unique solution of the system of linear equations for all t>0 (t is the parameter). Moreover, all the eigenvalues of the iteration matrix are real and nonnegative and the spectral radius of the iteration matrix is decreasing with respect to the parameter t. Besides, a preconditioning strategy based on the splitting of the symmetric and indefinite coefficient matrices is proposed. The eigensolution of the preconditioned matrix is described and an upper bound of the degree of the minimal polynomials for the preconditioned matrix is obtained. Numerical experiments of a model Stokes problem and a least‐squares problem with linear constraints presented to illustrate the effectiveness of the method. Copyright © 2011 John Wiley & Sons, Ltd.     

Moderate deviation for the single point catalytic super-Brownian motion

We establish the moderate deviation for the density process of the single point catalytic super-Brownian motion. The main tools are the abstract Grtner-Ellis theorem, Dawson-Grtner theorem and the contraction principle. The rate function is expressed by the Fenchel-Legendre transform of log-exponential moment generation function.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

基于散射模型设计外遮光罩

通过对粗糙表面散射情况的分析发现,普通金属材料的表面散射能量主要集中在10°散射角内。针对这种现象,提出了基于该散射特性的光学系统外遮光罩设计方法,该遮光罩的杂散光抑制角比基于反射理论计算的大5°,具有良好的散射杂散光的抑制作用。最后以Ritchey-Chirtien(R-C)光学系统为例,为其设计了合适的遮光罩,并在TracePro软件中对比性地建模、分析。结果证明了该模型的正确性,且该遮光罩对抑制杂散光起到了很好的效果,点源透射比(PST)相对较低。     

Effect of Solute‐Polymer Interactions on Sorption and Diffusion in Polyacrylamide Gels

Solute‐polymer interactions can exert a large effect on selective sorption and permeation in polyacrylamide (PAAm) gels. In order to investigate this effect, three probe polyelectrolytes, sodium polystyrene sulphonate (PSS), polyvinylpyrrolidone (PVP), and sulfonated polyaniline (SPANI), were chosen as probe species in sorption, release, and permeation experiments in PAAm gels. For PAAm gels with trapped SPANI, FTIR spectroscopy has confirmed that there exists hydrogen‐bonding between SPANI and PAAm. In addition, rigid‐chain SPANI has an intense tendency to aggregate; it is likely that the effective chains of the PAAm matrices are enwrapped in these aggregates. Hydrogen‐bonding and aggregation resulted in that the release kinetics of SPANI from PAAm gels exhibited a remarkable “lag time”, as long as 100 h (lag period means that in the initial period there is no detectable SPANI released from PAAm gels.), the releasing rate of SPANI was very slow, and the selective sorption of SPANI in PAAm gels was extremely high. On the other hand, the release and permeation of PVP and PSS through PAAm gels were much faster than SPANI, and the selective sorption were close to unity. From these facts it could be deduced that there is no or only weak interaction between PAAm and PSS (or PVP). Adding of concentrated support electrolyte resulted in decrease of the release rate and a two‐magnitude decrease of the calculated diffusion coefficients of PSS; the effect of support electrolyte on release and permeation of PSS was partly attributed to the electrostatic interaction.     

H+和Ar11+激发Si的K壳层X射线发射研究

测量了50–250 keV H⁺和1.0–3.0 MeV Ar¹¹⁺ 轰击Si表面过程中辐射的X射线. 结果表明, 在Ar¹¹⁺入射的情况下, 引起了Si的L壳层上3, 4个电子的多电离.计算了Si的K壳层X射线产生截面, 并将两体碰撞近似(BEA), 平面波恩近似, ECPSSR理论计算与实验值进行了对比. ECPSSR理论与质子产生的截面数据能够很好地符合; 而考虑多电离后, BEA理论与Ar¹¹⁺的实验结果符合较好. 关键词： X射线 高电荷态重离子 多电离     

Investigations on the g factors of the ground and excited states for Cu2+ ions in ZnO crystal

The g factors g _// and g _⊥ of the ground Γ₆(² T ₂) and excited Γ_4,5(² E), Γ₆(² E) states for trigonal Cu²⁺ centres in ZnO crystals are calculated from three theoretical methods, the complete diagonalization (of the energy matrix) method, the second-order perturbation method (PTM-I) and the simplified second-order perturbation method (PTM-II, this method was described in an earlier paper). These methods are based on the cluster approach in which the spin-orbit coupling parameters ζ, ζ′ and the orbital reduction factors k, k′ are calculated from a semi-empirical molecular orbital method. The crystal-field parameters used in the calculations are obtained from the superposition model and so the defect structure of Cu²⁺ centres in ZnO can be acquired. The calculated g factors from the three methods are in reasonable agreement with the experimental values and the defect structure of Cu²⁺ centres in ZnO is acquired. It appears that in some cases the approximate PTM can be applied in the studies of g factors of various states. The conditions that the PTM are ineffective are discussed.     

Elastic,electronic and thermal properties of topological insulator SmB6: first-principles calculations

Abstract

The pressure dependence of the structural, elastic, electronic and thermal properties of Kondo insulator SmB₆ have been systematically studied by density functional theory combined with the quasi-harmonic Debye model. The calculated structure at zero pressure is in good agreement with the available experimental results at low temperature. The obtained elastic constants, bulk modulus and shear modulus indicate that SmB₆ is mechanically stable and behaves in a brittle manner under the applied pressure 0–20 GPa, consistent with available experimental data. In addition, the elastic-relevant properties, Young’s modulus and the Poisson ratio manifest that increasing pressure results in an enhancement in the stiffness of the compound. It is found that unlike temperature, pressure has little effect on the heat capacity of SmB_6. What more important is that we observed an insulator to metal phase transition at about 5.5 GPa through the disappearance of the band gap, well consistent with the experimental data. This transition has little effect on the physical properties of SmB₆.