Quantum confinement in layer-by-layer deposited colloidal HgTe nanocrystals determined by spectroscopic ellipsometry

We report spectroscopic ellipsometry studies in the energy range of 0.5-5 eV on samples of 1-10 bilayers of polymer and HgTe nanocrystals, which exhibit strong transitions at higher critical points in the dispersion relation. We show that the dispersion relation for nanocrystals can be modelled with the same concepts for critical points as used in semiconductor bulk optics. We find an energy shift of up to 0.4 eV of the critical points to higher energies compared to the HgTe bulk properties, caused by quantum confinement in the nanocrystals, which increases with decreasing nanocrystal size.     

Simulation of outdoor sound propagation with a transmission line matrix method

The present paper focusses on the application of the transmission line matrix method (TLM) for outdoor sound propagation simulations. It is shown how the reflection at the ground and vertical sound speed gradients can be taken into account. The comparison with calculations using finite differences in the time domain (FDTD), with calculations using parabolic equation and with analytical solutions showed all very good agreement. Thereby the computational effort of TLM is significantly lower compared to common FDTD calculation schemes.     

Simulation of spray combustion in a lean-direct injection combustor

Large-eddy simulation (LES) of a liquid-fueled lean-direct injection (LDI) combustor is carried out by resolving the entire inlet flow path through the swirl vanes and the combustor. A localized dynamic subgrid closure is combined with a subgrid mixing and combustion model so that no adjustable parameters are required for both non-reacting and reacting LES. Time-averaged velocity predictions compare well with the measured data. The unsteady flow features that play a major role in spray dispersion, fuel–air mixing and flame stabilization are identified from the simulation data. It is shown that the vortex breakdown bubble (VBB) is smaller with more intense reverse flow when there is heat release. The swirling shear layer plays a major role in spray dispersion and the VBB provides an efficient flameholding mechanism to stabilize the flame.     

Mixed-Spin Ising Model in an Oscillating Magnetic Field and Compensation Temperature

Godoy et al. (Phys. Rev. B 69, 054428, 2004) presented a study of the magnetic properties of a mixed spin (1/2,1), Ising ferrimagnetic model on a hexagonal lattice without an oscillating magnetic field. They employed dynamic mean-field calculations and Monte Carlo simulations to find the compensation point of the model and to present the phase diagrams. It has been found that the N-type compensation temperature appears only when the intrasublattice interaction between spins in the σ sublattice is ferromagnetic. Moreover, the system only undergoes a second-order phase transition. In this work, we extend the study a dynamic compensation temperature of a mixed spin-1/2 and spin-1 Ising ferrimagnetic system on a hexagonal lattice in the presence of oscillating magnetic field within the framework of dynamic mean-field calculations. We find that the system displays the N-type compensation temperature. We also calculate dynamic phase diagrams in which contain the paramagnetic, ferrimagnetic, nonmagnetic fundamental phases and two different mixed phases, depending on the interaction parameters and oscillating magnetic field. The system also exhibits tricritical and reentrant behaviors.     

Novel metal complexes containing 6-methylpyridine-2-carboxylic acid as potent α-glucosidase inhibitor: synthesis,crystal structures,DFT calculations,and molecular docking

Molecular Diversity - The World Health Organization (WHO) report shows that diabetes mellitus (DM) will be one of the ten deadly diseases in the near future. The best way to prevent DM is to...     

Head-to-head bisbenzazole derivatives as antiproliferative agents: design,synthesis, in vitro activity,and SAR analysis

Molecular Diversity - In the present work, a series of bisbenzazole derivatives were designed and synthesized as antiproliferative agents. The antiproliferative activity of these compounds was...     

Cryogenic radiometer based absolute spectral power responsivity calibration of integrating sphere radiometer to be used in power measurements at optical fiber communication wavelengths

This paper covers the absolute spectral power responsivity calibration of spectralon-coated Integrating Sphere Radiometer (ISR) equipped with 3 mm diameter InGaAs photodiode to be used as a transfer standard in fiber optic power measurements against Electrical Substitution Cryogenic Radiometer (ESCR) in Optics Laboratory of National Metrology Institute (TUBITAK UME) of Turkey. The initial uncertainty arising from the use of the Electrically Calibrated Pyroelectric Radiometer (ECPR) as a transfer standard in radiometric scale is 0.5% (k=2), which particularly comes from irregularity in the surface homogeneity of ECPR. In order to eliminate the ECPR step as well as its initial uncertainty contribution in fiber optic power measurements, the calibration application herein was carried out. Moreover power stabilization measurements of DFB laser sources at both 1309.1 nm and 1549.0 nm, the beam size determinations, and spectral analyses of these laser sources as well as spatial and angular dependence of spectral responsivities of the ISR were presented in this paper. The total expanded uncertainties were calculated as 0.283% and 0.315% in the determination of absolute spectral power responsivities of the ISR for 1309.1 nm and 1549.0 nm wavelengths respectively (k=2).     

Investigation of 2-aminoethanethiol as corrosion inhibitor for steel using response surface methodology (RSM)

The inhibition efficiency of 2-aminoethanethiol (2-AEE) has been investigated against steel corrosion in 0.1 M HCl solution. The effect of temperature, pH, and concentration were studied with the help of potentiodynamic measurement, electrochemical impedance spectroscopy, scanning electron microscopy, and atomic absorption spectroscopy techniques. The potential of zero charge (E_pzc) studies showed that the adsorption occurs via ?SH group; the metal surface is positively charged in corrosive test solution. The adsorptive interaction is evaluated, and best correlation was obtained with Langmuir isotherm. 2-AEE was shown to have significant inhibition efficiency against steel corrosion. The response surface methodology was employed to explain the relation between pH, inhibitor concentration, and the efficiency. The regression analysis was realized for development of an equation between independent variables and the output. The success of fitting model was tested with basic statistical arguments, residual and variance analysis, T and F tests, and R ² value. The statistical evaluations showed that the obtained polynomial equation can be successfully used for optimization of applications involving the use of 2-AEE as inhibitor.     

Current-voltage characteristics of Au/GaN/GaAs structure

Au/GaN/n-GaAs structure has been fabricated by the electrochemically anodic nitridation method for providing an evidence of achievement of stable electronic passivation of n-doped GaAs surface. The change of the electronic properties of the GaAs surface induced by the nitridation process has been studied by means of current-voltage (I-V) characterizations on Schottky barrier diodes (SBDs) shaped on gallium nitride/gallium arsenide structure. Au/GaN/n-GaAs Schottky diode that showed rectifying behavior with an ideality factor value of 2.06 and barrier height value of 0.73 eV obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schottky diode due to the existence of GaN at the Au/GaAs interfacial layer. The formation of the GaN interfacial layer for the stable passivation of gallium arsenide surface is investigated through calculation of the interface state density N_ss with and without taking into account the series resistance R_s. While the interface state density calculated without taking into account R_s has increased exponentially with bias from 2.2×10¹² cm⁻² eV⁻¹ in (E_c−0.48) eV to 3.85×10¹² cm⁻² eV⁻¹ in (E_c−0.32) eV of n-GaAs, the N_ss obtained taking into account the series resistance has remained constant with a value of 2.2×10¹² cm⁻² eV⁻¹ in the same interval. This has been attributed to the passivation of the n-doped GaAs surface with the formation of the GaN interfacial layer.