Compensation of strong thermal lensing in high-optical-power cavities

In an experiment to simulate the conditions in high optical power advanced gravitational wave detectors, we show for the first time that the time evolution of strong thermal lenses follows the predicted infinite sum of exponentials (approximated by a double exponential), and that such lenses can be compensated using an intracavity compensation plate heated on its cylindrical surface. We show that high finesse approximately 1400 can be achieved in cavities with internal compensation plates, and that mode matching can be maintained. The experiment achieves a wave front distortion similar to that expected for the input test mass substrate in the Advanced Laser Interferometer Gravitational Wave Observatory, and shows that thermal compensation schemes are viable. It is also shown that the measurements allow a direct measurement of substrate optical absorption in the test mass and the compensation plate.     

Ultrafast hot-carrier dynamics at chemically modified Ge interfaces probed by SHG

Time-resolved second-harmonic generation (SHG) was used to study the hot-carrier dynamics and nonlinear optical properties of S-terminated and Cl-terminated Ge(111) interfaces on the femtosecond time scale. The hot-carrier second-order nonlinear optical susceptibilities were determined to be 720 +/- 50 times greater than the valence-band second-order nonlinear optical susceptibilities for the Ge(111)-S system and 880 +/- 100 times greater in the Ge(111)-Cl system. Furthermore, the ground- and excited-state second-order nonlinear optical susceptibilities are suggested to be out of phase for Ge(111)-S and Ge(111)-Cl systems, leading to a pump-induced decrease in the SHG signal as opposed to the increase in the SHG signal observed in the Ge(111)-GeO2 system. Although the SHG response reaches a steady state in 415 +/- 90 fs in the Ge(111)-GeO2 system, a faster response is observed in the Ge(111)-S system, 220 +/- 85 fs, and in the Ge(111)-Cl system, 172 +/- 50 fs. This suggests significantly faster carrier cooling at the Ge(111)-Cl and Ge(111)-S interfaces, with significant implications for hot-carrier mediated device degradation, and migration to high-K dielectrics.