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It is tried to make facet regions grow on interfaces curved concavely toward the melt using the Czochralski method. By increasing rapidly the pulling rate of crystals, the whole growth interface is once remelted and a concave interface is formed in the following growth process. A facet region occurs from a (¯I¯I¯I) plane which appears by the remelt of interfaces. This facet continues to grow while it is being surrounded by concave interfaces of nonfacet regions. From the microscopic measurement of spreading resistance. the impurity concentration is higher in the facet region than in non-facet ones. This suggests that the growth mechanism of the facet on concave interfaces is the same as that on convex ones. 相似文献
83.
Masashi Watanabe 《先进技术聚合物》2005,16(10):744-748
In this article the possibility of using various elastic polymer substrates for preparing wrinkled gold films was studied. The gold film was deposited on the substrate using an ion‐sputtering technique, while the substrate was stretched and fixed on a frame. The obtained gold film had wrinkles with a striped pattern. However, whether the pattern was well regulated or not depended on the substrate material. Polydimethylsiloxane (PDMS) was the preferable material when it did not contain fillers. Materials containing fillers are not suitable for this purpose. However, double layer substrates that consist of the PDMS without fillers (the upper layer) and the material containing fillers (the lower layer) could be used to obtain a relatively well‐ordered pattern. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
84.
9,10‐Diaminoanthracenes Revisited: The Influence of N‐Substituents on Their Electronic States 下载免费PDF全文
Masashi Uebe Prof. Dr. Tatsuhisa Kato Prof. Dr. Kazuyoshi Tanaka Dr. Akihiro Ito 《Chemistry (Weinheim an der Bergstrasse, Germany)》2016,22(52):18923-18931
The electronic and molecular structures of 9,10‐diamino‐substituted anthracenes with different N‐substituents have been re‐examined. In particular, different N‐substituents influence both the electronic and molecular structures of the oxidized species of 9,10‐diaminoanthracenes. The anthrylene moiety of 9,10‐bis(N,N‐di(p‐anisyl)amino)anthracene retains its planarity during the course of two successive one‐electron oxidations, whereas 9,10‐bis(N,N‐dimethylamino)anthracene and 9,10‐bis(N‐p‐anisyl‐N‐methylamino)anthracene undergo a substantial structural change to a butterfly‐like structure through a two‐electron oxidation process. The structural changes observed for the oxidized states are ascribed to significant differences in the frontier molecular orbitals of the above‐mentioned three kinds of 9,10‐diaminoanthracenes due to different extents of mixing between the amine‐localized and anthrylene‐localized orbitals. 相似文献
85.
Kato D Masaike M Majima T Hirata Y Mizutani F Sakata M Hirayama C Kunitake M 《Chemical communications (Cambridge, England)》2002,(22):2616-2617
Novel two-dimensional (2D) cross-linked polysiloxane LB films were prepared and applied for glucose sensing as H2O2-permselective films in order to block other electroactive interferences, such as L-ascorbic acid, L-cysteine, uric acid and acetaminophen; the 2D cross-linked polysiloxane monolayers were remarkably effective in eliminating interfering responses and had a rapid response for glucose, even though the films were only a monolayer thick. 相似文献
86.
Hisashi Shima Fumiyoshi Takano Hidenobu Muramatsu Masashi Yamazaki Hiroyuki Akinaga Akinori Kogure 《固体物理学:研究快报》2008,2(3):99-101
Kelvin probe force microscopy (KFM) and conductive atomic force microscopy (C‐AFM) together with micro X‐ray photoelectron spectroscopy (XPS) were performed for the stacking structure comprising of the transition metal oxide Co–O and metal electrode, which exhibits large reproducible resistance switching. The application of the external voltage by the C‐AFM cantilever decreases the resistance of Co–O, which well accords with the non‐polar forming process observed in the Pt/Co–O/Pt trilayer, known as the candidate of resistance random access memory (ReRAM). Furthermore, the KFM and micro XPS experimentally revealed that the local reductive reaction of Co–O possibly nucleates the defect related energy levels which dominates the current conduction in the low resistance state. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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88.
Masashi Wakamatsu 《Nuclear Physics A》1978,312(3):427-456
Effects of the second-order correction in multiple scattering theory and the nucleon binding correction to the optical potential are investigated in π?-4He elastic scattering and total reaction cross-sections. The second-order correction includes not only nucleon-nucleon correlation effects but also the contribution from spin (isospin) double-flip processes. It is found that the latter has an ascendency over the former. We have also shown that the nucleon binding effect is very important to reproduce the energy dependence of the total elastic cross section and the total reaction cross section, especially in the low energy and resonance energy regions. 相似文献
89.
Okada S Okinaka K Iwawaki H Furugori M Hashimoto M Mukaide T Kamatani J Igawa S Tsuboyama A Takiguchi T Ueno K 《Dalton transactions (Cambridge, England : 2003)》2005,(9):1583-1590
This study reports substituent effects of iridium complexes with 1-phenylisoquinoline ligands. The emission spectra and phosphorescence quantum yields of the complexes differ from that of tris(1-phenylisoquinolinato-C2,N)iridium(iii)(Irpiq) depending on the substituents. The maximum emission peak, quantum yield and lifetime of those complexes ranged from 598-635 nm, 0.17-0.32 and 1.07-2.34 micros, respectively. This indicates the nature of the substituents has a significant influence on the kinetics of the excited-state decay. The substituents attached to phenyl ring have an influence on a stability of the HOMO. Furthermore, those substituents have effect on the contribution to a mixing between 3pi-pi* and (3)MLCT for the lowest excited states. Some of the complexes display the larger quantum yield than Irpiq, which has the quantum yield of 0.22. The organic light emitting diode (OLED) device based on tris [1-(4-fluoro-5-methylphenyl)isoquinolinato-C2,N]iridium(iii)(Ir4F5Mpiq) yielded high external quantum efficiency of 15.5% and a power efficiency of 12.4 lm W(-1) at a luminance of 218 cd m(-2). An emission color of the device was close to an NTSC specification with CIE chromaticity characteristics of (0.66, 0.34). 相似文献
90.