On facets existed on concave interfaces in Czochralski-grown GaSb crystals

It is tried to make facet regions grow on interfaces curved concavely toward the melt using the Czochralski method. By increasing rapidly the pulling rate of crystals, the whole growth interface is once remelted and a concave interface is formed in the following growth process. A facet region occurs from a (¯I¯I¯I) plane which appears by the remelt of interfaces. This facet continues to grow while it is being surrounded by concave interfaces of nonfacet regions. From the microscopic measurement of spreading resistance. the impurity concentration is higher in the facet region than in non-facet ones. This suggests that the growth mechanism of the facet on concave interfaces is the same as that on convex ones.     

Real-space finite-difference approach for multi-body systems: path-integral renormalization group method and direct energy minimization method

The path-integral renormalization group and direct energy minimization method of practical first-principles electronic structure calculations for multi-body systems within the framework of the real-space finite-difference scheme are introduced. These two methods can handle higher dimensional systems with consideration of the correlation effect. Furthermore, they can be easily extended to the multicomponent quantum systems which contain more than two kinds of quantum particles. The key to the present methods is employing linear combinations of nonorthogonal Slater determinants (SDs) as multi-body wavefunctions. As one of the noticeable results, the same accuracy as the variational Monte Carlo method is achieved with a few SDs. This enables us to study the entire ground state consisting of electrons and nuclei without the need to use the Born-Oppenheimer approximation. Recent activities on methodological developments aiming towards practical calculations such as the implementation of auxiliary field for Coulombic interaction, the treatment of the kinetic operator in imaginary-time evolutions, the time-saving double-grid technique for bare-Coulomb atomic potentials and the optimization scheme for minimizing the total-energy functional are also introduced. As test examples, the total energy of the hydrogen molecule, the atomic configuration of the methylene and the electronic structures of two-dimensional quantum dots are calculated, and the accuracy, availability and possibility of the present methods are demonstrated.     

Constructing finitely presented monoids which have no finite complete presentation

Squier (1987) showed that if a monoid is defined by a finite complete rewriting system, then it satisfies the homological finiteness condition FP₃, and using this fact he gave monoids (groups) which have solvable word problems but cannot be presented by finite complete systems. In the present paper we show that a monoid cannot have a finite complete presentation if it contains certain special elements. This observation enables us to construct monoids without finite complete presentation in a direct and elementary way. We give a finitely presented monoid which has (1) a word problem solvable in linear time and (2) linear growth but (3) no finite complete presentation. We also give a finitely presented monoid which has (1) a word problem solvable in linear time, (2) finite derivation type in the sense of Squier and (3) the property FP_∞, but (4) no finite complete presentation.     

Reactive ion etching of FePt using inductively coupled plasma

We propose a reactive ion etching (RIE) process of an L1₀-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system and an etching gas combination of CH₄/O₂/NH₃ was employed. The L1₀-FePt films were deposited on (1 0 0)-oriented MgO substrates using a magnetron sputtering system. The etching masks of Ti were patterned on the FePt films lithographically. The etch rates of ∼16 and ∼0 nm/min were obtained for the FePt film and the Ti mask, respectively. The atomic force microscopy (AFM) analyses provided the average roughness (R_a) value of 0.95 nm for the etched FePt surface, that is, a very flat etched surface was obtained. Those results show that the highly selective RIE process of L1₀-FePt was successfully realized in the present study.     

Water vapor: An extraordinary terahertz wave source under optical excitation

In modern terahertz (THz) sensing and imaging spectroscopy, water is considered a nemesis to be avoided due to strong absorption in the THz frequency range. Here we report the first experimental demonstration and theoretical implications of using femtosecond laser pulses to generate intense broadband THz emission from water vapor. When we focused an intense laser pulse in water vapor contained in a gas cell or injected from a gas jet nozzle, an extraordinarily strong THz field from optically excited water vapor is observed. Water vapor has more than 50% greater THz generation efficiency than dry nitrogen. It had previously been assumed that the nonlinear generation of THz waves in this manner primarily involves a free-electron plasma, but we show that the molecular structure plays an essential role in the process. In particular, we found that THz wave generation from H₂O vapor is significantly stronger than that from D₂O vapor. Vibronic activities of water cluster ions, occurring naturally in water vapor, may possibly contribute to the observed isotope effect along with rovibrational contributions from the predominant monomers.     

Synthesis of nonplanar bipyridyls bridged by disilane and disiloxane and their phosphorescent copper complexes

Disilane- and disiloxane-bridged bipyridyls ( DSBPy and DSOBPy ) were prepared and their optical properties were investigated in comparison with those of previously reported monosilane- and monogermane-bridged counterparts. The UV–visible absorption and photoluminescence bands of DSBPy and DSOBPy were blue-shifted as a result of elongation of the bridging units from monosilane and monogermane to disilane and disiloxane, likely due to the enhanced twisting of the bipyridyl units. Phosphorescent complexes DSBPy–Cu and DSOBPy–Cu were prepared by the interaction of DSBPy and DSOBPy with Cu₂I₂(PPh₃)₂. X-ray diffraction studies of their single-crystal structures revealed polymeric structures composed of repeat units of DSBPy or DSOBPy and [Cu^II(PPh₃)]₂. Organic light-emitting diodes with the ITO/PEDOT:PSS/ DSBPy–Cu or DSOBPy–Cu :PCTSQ/TAZ/Al structure were fabricated to examine the applications of the complexes as electroluminescent materials. The devices emitted yellow light with emission maxima at approximately 600 nm, and maximal luminance reached 120 and 190 cd m⁻² for devices based on DSBPy–Cu and DSOBPy–Cu , respectively. The performance of the DSOBPy–Cu -based device was improved by using TAZ as the dopant of the emissive layer, and luminance was increased to 390 cd m⁻².     

Synthesis of thermoplastic curdlan alkyl carbamates having hydrogen bonding ability

Rigid and little moldable curdlan, a linear β-1,3-glucan having intra- and interchain hydrogen bonds, was reacted with several alkyl isocyanates, which gave thermoplastic curdlan alkyl carbamates (CrdC) with degree of substitution about 2. The alkyl carbamation at hydroxy groups in the glucan skeleton effectively broke the interchain hydrogen bonds of curdlan and increased flexibility of CrdC, while the newly formed carbamate moieties could moderately keep the hydrogen bonding ability in CrdC. Elongating the alkyl groups in the carbamate side chains increased solubility in organic solvents and thermoplasticity of CrdC, which enabled to make homogeneous and free-standing films by both methods of solution-casting and hot-pressing.     

Silicon-Based Integrated Optic Pressure Sensor Using Intermodal Interference between TM-Like and TE-Like Modes

In this paper, a silicon-based integrated optic pressure sensor using an intermodal interference between the fundamental TM-like and TE-like modes is described. The sensor consists of a micromachined rectangular diaphragm and a straight polystyrene optical waveguide passing over the diaphragm. Its sensitivity is theoretically known to be strongly dependent on the position of the waveguide over the diaphragm. To experimentally investigate such dependence, we fabricated a sensor with a 1.2 mm ×10 mm ×20 μm diaphragm, over which waveguides were placed at 50 μm intervals. The measured phase sensitivity was 98 mrad/kPa for the waveguide nearest to the diaphragm edge. The measurement was also carried out for the other waveguides. As theoretically expected, the largest sensitivity was obtained for the waveguide nearest to the edge.