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951.
We analyze the statistical behavior of signals in nonlinear circuits with delayed feedback in the presence of external Markovian noise. For the special class of circuits with intense phase mixing we develop an approach for the computation of the probability distributions and multitime correlation functions based on the random phase approximation. Both Gaussian and Kubo-Andersen models of external noise statistics are analyzed and the existence of the stationary (asymptotic) random process in the long-time limit is shown. We demonstrate that a nonlinear system with chaotic behavior becomes a noise amplifier with specific statistical transformation properties. 相似文献
952.
953.
B. Yu. Furchin 《Ukrainian Mathematical Journal》1989,41(6):681-685
Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 41, No. 6, pp. 794–798, June, 1989. 相似文献
954.
Summary The influence of internal degrees of freedom on the behaviour of one-dimensional systems is discussed. For systems with half-filled
bands the coupling to internalviz. lattice coordinates decides whether Peierls distortion is caused by intramonomer coordinates or by a lattice coordinate.
Thereby the various intramonomer degrees of freedom act cooperatively. We show that there is a small regime of parameters
where both kinds of distortion exist simultaneously. For increasing temperature we find that distortions can also move from
the lattice coordinate to the intramonomer coordinate. 相似文献
955.
György Gát 《Analysis Mathematica》2006,32(1):25-48
Summary It is known that the Fejér means - with respect to the character system of the Walsh, and bounded Vilenkin groups - of an
integrable function converge to the function a.e. In this work we discuss analogous problems on the complete product of finite,
not necessarily Abelian groups with respect to the character system for functions that are constant on the conjugacy classes.
We find that the nonabelian case differs from the commutative case. We prove the a.e. convergence of the (C,1) means of the Fourier series of square integrable functions. We also prove the existence of a function f∊Lq for some q >1 such that sup |σn f | = + ∞ a.e. This is a sharp contrast between the Abelian and the nonabelian cases. 相似文献
956.
The objective of this paper is to investigate the role of the set of irrational numbers as the codomain of order-preserving
functions defined on topological totally preordered sets. We will show that although the set of irrational numbers does not
satisfy the Debreu property it is still nonetheless true that any lower (respectively, upper) semicontinuous total preorder
representable by a real-valued strictly isotone function (semicontinuous or not) also admits a representation by means of
a lower (respectively, upper) semicontinuous strictly isotone function that takes values in the set of irrational numbers.
These results are obtained by means of a direct construction. Moreover, they can be related to Cantor’s characterization of the real line to obtain much more general results on the semicontinuous
Debreu properties of a wide family of subsets of the real line.
相似文献
957.
B.-K. Kim H. Oh E.-K. Jeon S.-R. Kim J.-R. Kim J.-J. Kim J.-O. Lee C.J. Lee 《Applied Physics A: Materials Science & Processing》2006,85(3):255-263
This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga2O3 layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm2/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH- or O2
- ions on the Ga2O3 surface shell. Using an intrinsic Ga2O3 shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O2. The GaP nanowire devices were fabricated as sensors for NO2, NH3, and H2 gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p 相似文献
958.
Investigations of thickness induced percolation process in Ptξ-Al2O3 nano-composites were carried out using grazing angle X-ray scattering. It is shown that the morphological characteristics of the nano-scaled Pt particles change significantly within the growth transversal direction. The initially non percolated two phases Ptξ-Al2O3 nano-composites show a noteworthy tendency to a percolated morphology with a gradual transversal increase of Pt nano-particles' average diameter in addition to the increase of the Pt nano-particles' poly-dispersity. This transversal morphological evolution is followed by a percolation phenomenon of the Pt nano-particles for a thickness of about ∼119.5 nm. This transversal morphological evolution seems to corroborate far too much with a columnar growth process. 相似文献
959.
960.
Reported to the 5th All-Union Conference on High-Temperature Plasma Diagnostics (June 18–22, 1990, Minsk). 相似文献