Autocorrelation function for polarization mode dispersion emulators with rotators

We derive a recursion relation for the frequency autocorrelation function of the polarization dispersion vector for polarization mode dispersion emulators with rotators. The autocorrelation function has a nonzero background for an emulator with a fixed number of sections. This background diminishes slowly as the number of sections grows. Randomizing the section lengths removes the autocorrelation periodicity exhibited by an emulator with equal sections, but it does not remove the finite background.     

EWMA control charts for autoregressive processes

Many processes must be monitored by using observations that are correlated. An approach called algorithmic statistical process control can be employed in such situations. This involves fitting an autoregressive/moving average time series model to the data. Forecasts obtained from the model are used for active control, while the forecast errors are monitored by using a control chart. In this paper we consider using an exponentially weighted moving average (EWMA) chart for monitoring the residuals from an autoregressive model. We present a computational method for finding the out-of-control average run length (ARL) for such a control chart when the process mean shifts. As an application, we suggest a procedure and provide an example for finding the control limits of an EWMA chart for monitoring residuals from an autoregressive model that will provide an acceptable out-of-control ARL. A computer program for the needed calculations is provided via the World Wide Web.     

Tunneled Intergrowth Structures in the Ga2O3–In2O3–SnO2 System

The structures of several Ga₂O₃–In₂O₃–SnO₂ phases were investigated using high-resolution electron microscopy, X-ray diffraction, and Rietveld analysis of time-of-flight neutron diffraction data. The phases, expressed as Ga_4−4xIn_4xSn_n−4O_2n−2 (n=6 and 7–17, odd), are intergrowths between the β-gallia structure of (Ga,In)₂O₃ and the rutile structure of SnO₂. Samples prepared with n≥9 crystallize in C2/m and are isostructural with intergrowths in the Ga₂O₃–TiO₂ system. Samples prepared with n=6 and n=7 are members of an alternative intergrowth series that crystallizes in P2/m. Both intergrowth series are similar in that their members possess 1-D tunnels along the b axis. The difference between the two series is described in terms of different crystallographic shear plane operations (CSP) on the parent rutile structure.     

Surface and defect structure of oxide nanowires on SrTiO3

Processing the SrTiO(3)(001) surface results in the self-assembly of reduced titanate nanowires whose widths are approximately 1 nm. We have imaged these nanowires and their defects at elevated temperatures by atomic resolution scanning tunneling microscopy. The nanowire structure is modeled with density functional theory, and defects observed in the center of the nanowire are determined to be Ti(4)O(3) vacancy clusters. The activation energy for Ti(4)O(3) vacancy cluster diffusion is explicitly measured as 4.98±0.17 eV with an exponential prefactor of μ=6.57×10(29) (s(-1).     

Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability

Developing new high-mobility polymeric semiconductors with good processability and excellent device environmental stability is essential for organic electronics. We report the synthesis, characterization, manipulation of charge carrier polarity, and device air stability of a new series of bithiophene-imide (BTI)-based polymers for organic field-effect transistors (OFETs). By increasing the conjugation length of the donor comonomer unit from monothiophene (P1) to bithiophene (P2) to tetrathiophene (P3), the electron transport capacity decreases while the hole transport capacity increases. Compared to the BTI homopolymer P(BTimR) having an electron mobility of 10(-2) cm(2) V(-1) s(-1), copolymer P1 is ambipolar with balanced hole and electron mobilities of ～10(-4) cm(2) V(-1) s(-1), while P2 and P3 exhibit hole mobilities of ～10(-3) and ～10(-2) cm(2) V(-1) s(-1), respectively. The influence of P(BTimR) homopolymer M(n) on film morphology and device performance was also investigated. The high M(n) batch P(BTimR)-H affords more crystalline film microstructures; hence, 3× increased electron mobility (0.038 cm(2) V(-1) s(-1)) over the low M(n) one P(BTimR)-L (0.011 cm(2) V(-1) s(-1)). In a top-gate/bottom-contact OFET architecture, P(BTimR)-H achieves a high electron mobility of 0.14 cm(2) V(-1) s(-1), only slightly lower than that of state-of-the-art n-type polymer semiconductors. However, the high-lying P(BTimR)-H LUMO results in minimal electron transport on exposure to ambient. Copolymer P3 exhibits a hole mobility approaching 0.1 cm(2) V(-1) s(-1) in top-gate OFETs, comparable to or slightly lower than current state-of-the-art p-type polymer semiconductors (0.1-0.6 cm(2) V(-1) s(-1)). Although BTI building block incorporation does not enable air-stable n-type OFET performance for P(BTimR) or P1, it significantly increases the OFET air stability for p-type P2 and P3. Bottom-gate/top-contact and top-gate/bottom-contact P2 and P3 OFETs exhibit excellent stability in the ambient. Thus, P2 and P3 OFET hole mobilities are almost unchanged after 200 days under ambient, which is attributed to their low-lying HOMOs (>0.2 eV lower than that of P3HT), induced by the strong BTI electron-withdrawing capacity. Complementary inverters were fabricated by inkjet patterning of P(BTimR)-H (n-type) and P3b (p-type).