Banach spaces of distributions having two module structures

After a discussion of a space of test functions and the corresponding space of distributions, a family of Banach spaces (B, ∥ ∥_B) in standard situation is described. These are spaces of distributions having a pointwise module structure and also a module structure with respect to convolution. The main results concern relations between the different spaces associated to B established by means of well-known methods from the theory of Banach modules, among them B₀ and $\text{B}\text{?}$, the closure of the test functions in B and the weak relative completion of B, respectively. The latter is shown to be always a dual Banach space. The main diagram, given in Theorem 4.7, gives full information concerning inclusions between these spaces, showing also a complete symmetry. A great number of corresponding formulas is established. How they can be applied is indicated by selected examples, in particular by certain Segal algebras and the A_p-algebras of Herz. Various further applications are to be given elsewhere.     

Holonomy and path structures in general relativity and Yang-Mills theory

This article is about a different representation of the geometry of the gravitational field, one in which the paths of test bodies play a crucial role. The primary concept is the geometry of the motion of a test body, and the relation between different such possible motions. Space-time as a Lorentzian manifold is regarded as a secondary construct, and it is shown how to construct it from the primary data. Some technical problems remain. Yang-Mills fields are defined by their holonomy in an analogous construction. I detail the development of this idea in the literature, and give a new version of the construction of a bundle and connection from holonomy data. The field equations of general relativity are discussed briefly in this context.     

Adaptive local grid refinement algorithms for finite-element collocation

An adaptive grid refinement procedure allows accurate solutions to advection-dominated, time-dependent flows using finite-element collocation. The technique relies on a data structure that is readily amenable to parallel computing. The paper discusses computational aspects of the method.     

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Measurements of theg-factor ratio of the first 3− and 5− states in40Ca and the lifetime of the 5− state

[Theg-factor ratio of the first excited 3^? and 5^? states in⁴⁰Ca was measured to beg ₃/g ₅=1.01(10) employing the implantation perturbed angular correlation technique. The static hyperfine fields (SF) in Fe and Gd hosts were used. In addition the lifetime of the 5^? state was measured to be τ=426(7)ps. The values of the SF in Gd and Fe hosts were deduced and compared with systematics in this element region.     

Resolvability properties via independent families

The authors give a consistent affirmative response to a question of Juhász, Soukup and Szentmiklóssy: If GCH fails, there are (many) extraresolvable, not maximally resolvable Tychonoff spaces. They show also in ZFC that for ω<λ?κ, no maximal λ-independent family of λ-partitions of κ is ω-resolvable. In topological language, that theorem translates to this: A dense, ω-resolvable subset of a space of the form (DI(λ)) is λ-resolvable.     

Potential for micromachined actuation of ultra-wide continuously tunable optoelectronic devices

Tailored scaling represents a principle of success that, both in nature and in technology, allows the effectiveness of physical effects to be enhanced. Mutation and selection in nature are imitated in technology, e.g. by model calculation and design. Proper scaling of dimensions in natural photonic crystals and our fabricated artificial 1D photonic crystals (DBRs, distributed Bragg reflectors) enable efficient diffractive interaction in a specific spectral range. For our optical microsystems we illustrate that tailored miniaturization may also increase the mechanical stability and the effectiveness of spectral tuning by thermal and electrostatic actuation, since the relative significance of the fundamental physical forces involved considerably changes with scaling. These basic physical principles are rigorously applied in micromachined 1.55-μm vertical-resonator-based devices. We modeled, implemented and characterized 1.55-μm micromachined optical filters and vertical-cavity surface-emitting laser devices capable of wide, monotonic and kink-free tuning by a single control parameter. Tuning is achieved by mechanical actuation of one or several air-gaps that are part of the vertical resonator including two ultra-highly reflective DBR mirrors of strong refractive index contrast: (i) Δn=2.17 for InP/air-gap DBRs (3.5 periods) using GaInAs sacrificial layers and (ii) Δn=0.5 for Si₃N₄/SiO₂ DBRs (12 periods) with a polymer sacrificial layer to implement the air-cavity. In semiconductor multiple air-gap filters, a continuous tuning of >8% of the absolute wavelength is obtained. Varying the reverse voltage (U=0–5 V) between the membranes (electrostatic actuation), a tuning range of >110 nm was obtained for a large number of devices. The correlation of the wavelength and the applied voltage is accurately reproducible without any hysteresis. In two filters, tuning of 127 and 130 nm was observed for about ΔU=7 V. The extremely wide tuning range and the very small voltage required are record values to the best of our knowledge. For thermally actuated dielectric filters based on polymer sacrificial layers, Δλ/ΔU=-7 nm/V is found. Received: 10 May 2002 / Published online: 8 August 2002     

Vibrational Dynamics Studies by Nuclear Resonant Inelastic X-Ray Scattering

Nuclear resonant inelastic X-ray scattering of synchrotron radiation is being applied to ever widening areas ranging from geophysics to biophysics and materials science. Since its first demonstration in 1995 using the ⁵⁷Fe resonance, the technique has now been applied to materials containing ⁸³Kr, ¹⁵¹Eu, ¹¹⁹Sn, and ¹⁶¹Dy isotopes. The energy resolution has been reduced to under a millielectronvolt. This, in turn, has enabled new types of measurements like Debye velocity of sound, as well as the study of origins of non-Debye behavior in presence of other low-energy excitations. The effect of atomic disorder on phonon density of states has been studied in detail. The flux increase due to the improved X-ray sources, crystal monochromators, and time-resolved detectors has been exploited for reducing sample sizes to nano-gram levels, or using samples with dilute resonant nuclei like myoglobin, or even monolayers. Incorporation of micro-focusing optics to the existing experimental setup enables experiments under high pressure using diamond-anvil cells. In this article, we will review these developments. This revised version was published online in August 2006 with corrections to the Cover Date.