Photoemission studies of clean and oxygen-covered Pt 6(111) × (100)

Employing the enhanced sensitivity obtained by using synchrotron radiation near the Cooper minimum for the 5d valence electrons, we have located the oxygen 2p and 2s levels for oxygen chemisorbed on a Pt 6(111) × (100) crystal. We find the oxygen 2p level located ?6 eV with a FWHM of 3 eV and the 2s at ?21.6 eV. A factor of four difference in saturation coverage is measured between temperatures of 300 and 120 K, but the position and width of the 2p level is independent of temperature. We observe also the 1b₁ orbital of weakly adsorbed H₂O molecules, which has pure O 2p parentage; from the intensity of this orbital, we are able to suggest why it is difficult to observe the oxygen 2p signal at low photon energies. In addition, we note a strong preferential attenuation in the Pt states near E_f for the adsorbed H₂O in spite of the weak nature of the bond.     

How to Construct Polar Codes for Ring-LWE-Based Public Key Encryption

There exists a natural trade-off in public key encryption (PKE) schemes based on ring learning with errors (RLWE), namely: we would like a wider error distribution to increase the security, but it comes at the cost of an increased decryption failure rate (DFR). A straightforward solution to this problem is the error-correcting code, which is commonly used in communication systems and already appears in some RLWE-based proposals. However, applying error-correcting codes to those cryptographic schemes is far from simply installing an add-on. Firstly, the residue error term derived by decryption has correlated coefficients, whereas most prevalent error-correcting codes with remarkable error tolerance assume the channel noise to be independent and memoryless. This explains why only simple error-correcting methods are used in existing RLWE-based PKE schemes. Secondly, the residue error term has correlated coefficients leaving accurate DFR estimation challenging even for uncoded plaintext. It can be found in the literature that a tighter DFR estimation can effectively create a DFR margin. Thirdly, most error-correcting codes are not well designed for safety considerations, e.g., syndrome decoding has a nonconstant time nature. A code good at error correcting might be weak under a variety of attacks. In this work, we propose a polar coding scheme for RLWE-based PKE. A relaxed “independence” assumption is used to derive an uncorrelated residue noise term, and a wireless communication strategy, outage, is used to construct polar codes. Furthermore, some knowledge about the residue noise is exploited to improve the decoding performance. With the parameterization of NewHope Round 2, the proposed scheme creates a considerable DRF margin, which gives a competitive security improvement compared to state-of-the-art benchmarks. Specifically, the security is improved by 28.8%, while a DFR of 2−149 is achieved a for code rate pf 0.25, n=1024,q= 12,289, and binomial parameter k=55. Moreover, polar encoding and decoding have a quasilinear complexity O(Nlog2N) and intrinsically support constant-time implementations.     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.     

Preparation and characterization of vinyltriethoxysilane based inorganic–organic gel glasses dispersed 4′-n-pentyl-4-cyanobiphenyl nematic liquid crystal

Vinyltriethoxysilane based inorganic–organic glasses dispersed with 4′-n-pentyl-4-cyanobiphenyl nematic liquid crystal are designed to fabricate a new type of gel glass dispersed with liquid crystal. Scanning electron microscopy shows that the nematic liquid crystal phase, occupying the interconnected cavities, is continuously embedded in the inorganic–organic matrixes. The effect of the nematic liquid crystal weight concentration on the morphology is investigated. The differential scanning calorimetry shows that the nematic-isotropic transition temperature depends on the nematic liquid crystal weight concentration. The Raman spectra show that there are no obvious Raman frequency shifts, compared with pure nematic liquid crystal. The in situ diffuse reflectance FTIR spectra show that the integral intensity of bands of hydroxyls has not varied.     

反应条件对水热合成二硫化镍NiS2粉晶的影响

本文采用水热法一步合成了二硫化镍粉晶,利用X射线衍射(XRD),扫描电子显微镜讨论了样品N iS2粉晶的晶体结构及形貌,研究了X射线衍射峰积分强度以及半峰宽等随反应条件的变化,并分析了N iS2粉晶的合成机理.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

超短激光打孔中快速相变的格子玻尔兹曼模拟

采用双重分布函数的格子玻尔兹曼模型，对单脉冲激光金属打孔过程中的快速相变传热进行研究.模型考虑了金属材料熔化后熔体的流动换热，并采用浸没移动边界方案对过程中的固液界面进行追踪.采用纯导热模型和考虑对流的换热模型计算，将结果和试验进行对比，结果表明：在激光打孔过程中熔体的流动对相变传热产生较大影响，采用考虑流动换热模型的结果与实验更接近.进而对熔化速度、熔化深度以及温度场的变化进行分析，并探讨不同激光工艺参数对相变过程的影响.模拟发现一个脉冲结束后，激光的脉宽越大，孔深越小，孔径越大，且最高温度较短脉冲激光越低.     

利用相位步进脉冲消除探头13C NMR背景信号

由静态探头线圈外有机材料产生的¹³C NMR背景信号强度大,化学位移范围广（δ_C 20~250）,此背景信号在交叉极化实验中还可被增强,并随着样品信号的累积而累积,严重影响谱图分析.将相位步进脉冲引入交叉极化实验（称为PIPCP）中可以有效去除经交叉极化增强的¹³C NMR背景信号,但样品信号不受影响.这是由于经过相位步进脉冲后,线圈外相位严重畸变,而且线圈外锁定场强度急剧降低,来自探头材料的¹³C NMR背景信号无法有效地进行交叉极化.而对于被测样品甘氨酸来说,由于I核和S核之间强烈的偶极耦合作用,所加相位步进脉冲对锁定场强度的影响只有1.4%.     

基于器件结构提高TADF-OLED器件的发光性能

为了提高以TADF材料作为主体、天蓝色荧光材料作为客体的混合薄膜的OLED器件光电性能,我们调整了器件结构,使主体材料发挥其优势。制备了基本结构为ITO/NPB(40 nm)/DMAC-DPS∶x%BUBD-1(40 nm)/Bphen(30 nm)/LiF(0.5 nm)/Al的OLED器件。研究了主-客体材料在不同掺杂浓度下的OLED器件的光电特性。为了提高主体材料的利用率,在空穴传输层和发光层之间加入10 nm的DMAC-DPS作为间隔层;然后,在阳极和空穴传输层之间加入HAT-CN作为空穴注入层,形成HAT-CN/NPB结构的PN结,有效降低了器件的启亮电压(2.7 V)。测量了有无HAT-CN的单空穴器件的阻抗谱。结果表明,在最佳掺杂比例(2%)下,器件的外量子效率(EQE)达到4.92%,接近荧光OLED的EQE理论极限值;加入10 nm的DMAC-DPS作为间隔层,使得器件的EQE达到5.37%;HAT-CN/NPB结构的PN结有效地降低了器件的启亮电压(2.7 V),将OLED器件的EQE提高到5.76%;HAT-CN的加入提高了器件的空穴迁移率,降低了单空穴器件的阻抗...