基于次谐波调制光注入半导体激光器获取窄线宽微波信号的实验研究

实验研究了处于单周期振荡的光注入半导体激光器在频率等于单周期振荡频率一半的1/2次谐波调制下所产生的微波信号的特性.实验结果显示:在合适的注入条件下,处于单周期(P1)振荡的光注入半导体激光器可输出频率可达26.5 GHz、光谱具有单边带结构的光生微波信号,但微波信号的线宽比较宽(MHz量级);通过采用频率为单周期振荡频率一半的次谐波信号调制光注入半导体激光器,可将微波线宽从十几MHz压缩到几十k Hz.进一步分析了次谐波调制信号的功率以及频率对微波信号的相位噪声的影响,并在由次谐波调制信号的功率和频率构成的参数空间绘制出了能实现次谐波频率锁定的分布区域.     

Parameter estimation of continuous variable quantum key distribution system via artificial neural networks

Continuous-variable quantum key distribution(CVQKD)allows legitimate parties to extract and exchange secret keys.However,the tradeoff between the secret key rate and the accuracy of parameter estimation still around the present CVQKD system.In this paper,we suggest an approach for parameter estimation of the CVQKD system via artificial neural networks(ANN),which can be merged in post-processing with less additional devices.The ANN-based training scheme,enables key prediction without exposing any raw key.Experimental results show that the error between the predicted values and the true ones is in a reasonable range.The CVQKD system can be improved in terms of the secret key rate and the parameter estimation,which involves less additional devices than the traditional CVQKD system.     

Interaction Mechanism and Loss Analysis of Mixing between Film Cooling Jet and Passage Vortex

The interaction between the film-cooling jet and vortex structures in the turbine passage plays an important role in the endwall cooling design. In this study, a simplified topology of a blunt body with a half-cylinder is introduced to simulate the formation of the leading-edge horseshoe vortex, where similarity compared with that in the turbine cascade is satisfied. The shaped cooling hole is located in the passage. With this specially designed model, the interaction mechanism between the cooling jet and the passage vortex can therefore be separated from the crossflow and the pressure gradient, which also affect the cooling jet. The loss-analysis method based on the entropy generation rate is introduced, which locates where losses of the cooling capacity occur and reveals the underlying mechanism during the mixing process. Results show that the cooling performance is sensitive to the hole location. The injection/passage vortex interaction can help enhance the coolant lateral coverage, thus improving the cooling performance when the hole is located at the downwash region. The coolant is able to conserve its structure in that, during the interaction process, the kidney vortex with the positive rotating direction can survive with the negative-rotating passage vortex, and the mixture is suppressed. However, the larger-scale passage vortex eats the negative leg of the kidney vortices when the cooling hole is at the upwash region. As a result, the coolant is fully entrained into the main flow. Changes in the blowing ratio alter the overall cooling effectiveness but have a negligible effect on the interaction mechanism. The optimum blowing ratio increases when the hole is located at the downwash region.     

从单一多位交换~(119)Sn二维交换谱求取SnCl_6~(2-)水解体系的动态交换速率常数

本文对如何从单一二维交换谱提取速率常数进行了理论分析,提出了一种近似处理方法,即把较短混合时间τ_m内在二维平面上磁化强度传递看成是单向进行的,进而导出了二维交换谱中所有峰强随τ_m变化的表达式。所得结果与Ernst的精确结果在一级近似下完全一致,在二级近似下略有不同,但将难以求解的问题转化成简单的代数方程、用这一方法对新近获得的SnCl_4·5H_2O在水溶液中的~(119)Sn二维交换谱进行了处理,得到与实验相吻合的结果,并求得了SnCI_6~(2-)水解体系的动态交换速率常数。     

Intensity distribution and coherence property for the broadband Gaussian Schell-model array beams in free space

The intensity distribution and the equal-time complex degree of coherence for the broadband Gaussian Schell-model array beams with different bandwidth propagating in free space are analyzed by the numerical calculation. Results show that the intensity distribution for the broadband Gaussian Schell-model array beams by uncorrelated superposition is rarely affected by the bandwidth; the intensity distribution in the far field for the broadband Gaussian Schell-model array beams by correlated superposition is affected by the bandwidth more obviously than that in the near field. With the increasing of the propagation distance, differences in the equal-time complex degree of coherence for the broadband Gaussian Schell-model array beams with different bandwidth become prominent.     

Insights into the Reinforcement of Butyl Rubber by Carbon Black and Silica with the Aid of Their Dynamic Properties

Carbon black (N234) and silica (Vulksail N) with a silane coupling agent Si-69 were chosen as reinforcing fillers in butyl rubber (IIR). The rheological behavior of the IIR compounds and the dynamic mechanical properties of IIR vulcanizates were investigated with a rubber processing analyzer and dynamic mechanical analysis (DMA) to examine the filler dispersion in the rubber matrix and the interaction between filler and matrix. The data indicated that the N234 filled IIR compounds had more filler networks than those filled with silica. Filler networks first appeared at 30 phr N234 and 45 phr silica with silane coupling agent Si-69. The interaction between N234 and IIR was far stronger than that between silica and IIR. However, the silica Vulksail N filled IIR had better wet-grip and lower rolling resistance compared to the carbon black-filled IIR should IIR be chosen as a substitute of styrene-butadiene rubber (SBR) in tire tread. The reinforcing factor, R, R (related to the difference in tan d peak height at T_g for the filled and nonfilled rubbers), also demonstrated that the N234-IIR interaction was stronger than for the silica. IIR with 30 phr N234 exhibited the largest tensile strength, 20.1 MPa, for those vulcanizates examined. The tensile and tear strengths of N234 filled IIR were higher than those of IIR with similar amounts of silica. Thus, it was concluded that N234 is a more active reinforcing filler in IIR than silica (Vulksail N) even with a silane coupling agent (Si-69).     

Left–right asymmetry for pion and kaon production in the semi-inclusive deep-inelastic scattering process

We analyze the left–right asymmetry in the semi-inclusive deep-inelastic scattering (SIDIS) process without introducing any weighting functions. With the current theoretical understanding, we find that the Sivers effect plays a key role in our analysis. We use the latest parametrization of the Sivers and fragmentation functions to reanalyze the π ^± production process and find that the results are sensitive to the parametrization. We also extend our calculation on the K ^± production, which can help us know more about the Sivers distribution of the sea quarks and the unfavored fragmentation processes. HERMES kinematics with a proton target, COMPASS kinematics with a proton, deuteron, and neutron target (the information on the neutron target can be effectively extracted from the ³He target), and JLab kinematics (both 6 GeV and 12 GeV) with a proton and neutron target are considered in our paper.     

量纲分析的线性代数方法

把量纲概念与矢量空间联系起来,提出用线性代数进行量纲分析的方法,并举例说明。     

Effect of high temperature band gap of GaN annealing on strain and nanoparticles

<正>Black-coloured GaN nanoparticles with an average grain size of 50 nm have been obtained by annealing GaN nanoparticles under flowing nitrogen at 1200℃for 30 min.XRD measurement result indicates an increase in the lattice parameter of the GaN nanoparticles annealed at 1200℃,and HRTEM image shows that the increase cannot be ascribed to other ions in the interstitial positions.If the as-synthesised GaN nanoparticles at 950℃are regarded as standard,the thermal expansion changes nonlinearly with temperature and is anisotropic;the expansion below 1000℃is smaller than that above 1000℃.This study provides an experimental demonstration for selecting the proper annealing temperature of GaN.In addition,a large blueshift in optical bandgap of the annealed GaN nanoparticles at 1200℃is observed,which can be ascribed to the dominant transitions from the C（Γ₇） with the peak energy at 3.532 eV.     

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Considering various In distributions, we investigate electronic structures and light emission of wurtzite In_xGa_1 − xN (0?x?1) alloys. We find In_xGa_1 − xN forms a random alloy, in which many several-atom In-N clusters and short In-N- chains can exist. Small In-N clusters, especially in-plane ones, strongly localize valence electrons and dominate light emission in Ga-rich In_xGa_1 − xN alloys, which is consistent with experiments.