Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material

Triple-layer omnidirectional reflectors (ODRs) consisting of a semiconductor, a quarter-wavelength transparent dielectric layer, and a metal have high reflectivities for all angles of incidence. Internal ODRs (ambient material's refractive index n > 1.0) are demonstrated that incorporate nanoporous SiO2, a low-refractive-index material (n = 1.23), as well as dense SiO2 (n = 1.46). GaP and Ag serve as the semiconductor and the metal layer, respectively. Reflectivity measurements, including angular dependence, are presented. Calculated angle-integrated TE and TM reflectivities for ODRs employing nanoporous SiO2 are R(int)/TE = 99.9% and R(int)/TM = 98.9%, respectively, indicating the high potential of the ODRs for low-loss waveguide structures.     

Determination of /Vub/ from measurements of the inclusive charmless semileptonic partial rates of B mesons using full reconstruction tags

We present a measurement of the Cabibbo-Kobayashi-Maskawa matrix element /Vub/, based on 253 fb(-1) of data collected by the Belle detector at the KEKB e+ e- asymmetric collider. Events are tagged by fully reconstructing one of the B mesons, produced in pairs from Gamma(4S). The signal for b --> u semileptonic decay is distinguished from the b --> c background using the hadronic mass Mx, the leptonic invariant mass squared q2 and the variable P+ [triple bond] Ex - /px/. The results are obtained for events with p(l)* > or = 1 GeV/c, in three kinematic regions (1) Mx < 1.7 GeV/c2, (2) Mx < 1.7 GeV/c2 combined with q2 > 8 GeV2/c2, and by (3) P+ < 0.66 GeV/c. The matrix element /Vub/ is found to be (4.09 +/- 0.19 +/- 0.20(+0.14) -0.15 +/- 0.18) x 10(-3), where the errors are statistical, systematic including Monte Carlo modeling, theoretical, and from shape function parameter determination, respectively.     

Search for CP violation in the decay B0-->D*+/-D-/+

We report a search for CP-violating asymmetry in B0-->D(*+/-)D-/+ decays. The analysis employs two methods of B0 reconstruction: full and partial. In the full reconstruction method all daughter particles of the B0 are required to be detected; the partial reconstruction technique requires a fully reconstructed D- and only a slow pion from the D(*+)-->D0pi(+)(slow) decay. From a fit to the distribution of the time interval corresponding to the distance between two B meson decay points we calculate the CP-violating parameters and find the significance of nonzero CP asymmetry to be 2.7 standard deviations.     

Observation of radiative B-->phi K gamma decays

The radiative decay B-->phi K gamma is observed for the first time. The branching fraction for the charged B--->phi K- gamma decay mode is measured to be B(B--->phi K- gamma)=(3.4+/-0.9+/-0.4)x10(-6). The photon energy distribution for the B--->phi K- gamma decay is presented. The signal for the neutral B(0)-->phi K(0)gamma decay mode is not statistically significant and an upper limit, B(B(0)-->phi K(0)gamma)<8.3x10(-6) at 90% C.L., is set. The analysis is based on a data set of 90 fb(-1) collected by the Belle experiment at the e(+)e(-) asymmetric collider KEKB.     

Study of gain flatness for multi-channel amplification in single stage EDFA for WDM applications

In this paper, gain flatness is studied for simultaneous 16-ITU-T channel amplifications at C-band (1,532–1,558 nm) in a single stage EDFA for WDM application at different average inversion levels. The inversion levels are varied due to the change of the input signal levels from the targeted operating point and also for dropping few numbers of channels. Specially designed gain flattening filter (GFF) is used in order to get the flat gain with gain variation ±0.5 dB for −20 dBm/ch input signal power (total input signal power is −8.0 dBm) at a fixed average inversion level which is maintained by proper selection of optimum fibre length and pump power. A specific loss spectrum of GFF is obtained by writing a chirped fibre Bragg grating of length 20 mm. Gain variations are studied by changing the total input signal levels from −8.0 dBm to −20.0 dBm and maintained within 20.0 ± 0.5 dB by using automatic gain control (AGC) circuit. About 15 out of 16 channels are dropped and observed ± 0.5 dB gain-variation which is an important parameter in optical network system.     

Solution study of a structurally characterized monoalkoxo-bound monooxo-vanadium(V) complex: spontaneous generation of the corresponding oxobridged divanadium(V,V) complex and its electroreduction to a mixed-valence species in solution

An interesting transformation of a structurally characterized monooxoalkoxovanadium(V) complex [VO(OEt)L] (LH 2 = a dibasic tridentate ONO donor ligand) in solution leading to the formation of the corresponding monooxobridged divanadium(V,V) complex (VOL) 2O is reported. This binuclear species in solution is adequately characterized by elemental analysis, measurement of conductance (in solution), various spectroscopic (UV-vis, IR, NMR, and mass spectrometry) techiniques and by cyclic voltammetry. The corresponding mixed-valence vanadium(IV,V) species has been generated in CH 3CN solution by controlled potential electrolysis of (VOL) 2O. This mixed-valence species is identified and studied by EPR technique (at room temperature and at liquid nitrogen temperature) and also by UV-vis spectroscopy. This study may be regarded as a general method of obtaining monooxo-bridged binuclear vanadium(V,V) species from the corresponding mononuclear monooxoalkoxovanadium(V) complexes of some selected dibasic tridentate ONO chelating ligands, which can be utilized as the precursor of monooxobridged divanadium(IV,V) mixed-valence species in solution obtainable by controlled potential electrolysis.     

Complexes of Silver(l) with arsenic and phosphorus donor ligands. Co-ordination number 4

Some tetracoordinated complexes having the formulae, [AgL₄]X (L = Triphenyl-arsine; X = NO, ClO and BrO) and [AgL₃X] (L = Triphenyl-arsine/phosphine; X = SCN^? and NCO^?) have been prepared and characterised by analyses, conductance, magnetic susceptibility and infra-red spectroscopy.     

The non-commutative oscillator, symmetry and the Landau problem

The isotropic oscillator on a plane is discussed where the coordinate and momentum space are both considered to be non-commutative. We also discuss the symmetry properties of the oscillator for three separate cases when the non-commutative parameters Θ and for x and p-space, respectively, satisfy specific relations. We compare the Landau problem with the isotropic oscillator on non-commutative space and obtain a relation between the two non-commutative parameters and the magnetic field of the Landau problem.     

Microwave–assisted synthesis of <Emphasis Type="Italic">submicrometer</Emphasis> GaO(OH) and Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> rods

Submicrometer sized gallium oxide hydroxide (GaO(OH)) and gallium oxide (Ga₂O₃) rods have been successfully fabricated on a large scale by refluxing an aqueous solution of Ga(NO₃)₃ and NH₄OH in a simple domestic microwave oven (DMO). The structures, morphologies, compositions and physical properties of the as–synthesized and calcined products have been characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), selected area energy dispersive X-ray spectroscopy (SAEDS), thermo gravimetric analysis (TGA), differential scanning calorimetry (DSC), and energy dispersive X-ray (EDX) analysis. TEM images show that submicrometer sized as–synthesized Ga O(OH) rods have diameters of 0.3–0.5 m and lengths of 3.2–3.5 m. The calcined product consists of submicrometer rods with diameters of 0.4–0.5 m and lengths of 5–5.5 m. XRD, EDX and SAED analysis together indicate that the as–synthesized product has an orthorhombic gallium oxide hydroxide (GaO(OH)) crystal structure, and that the calcined product is rhombohedral Ga₂O₃. A possible mechanism for the formation of submicrometer sized GaO(OH) rods is discussed briefly.     

Secondary ion mass spectrometry and X-ray photoelectron spectroscopy studies on TiO2 and nitrogen doped TiO2 thin films

Anatase phase TiO₂ and nitrogen (N) doped TiO₂ thin films were synthesized by an ultrasonic spray pyrolysis technique on c-Si (100) substrates in the temperature range 300-550 °C. The former used a precursor solution of titanium oxy acetylacetonate in methanol whereas the later used a titanium oxy acetylacetonate hexamine mixture in methanol. Homogeneity across the film’s thickness and the nature of the film-substrate interface were studied by dynamic depth profiling acquired using secondary ion mass spectrometry SIMS. The stoichiometry and bonding state of various species present in the films were studied using X-ray photoelectron spectroscopy (XPS). N-doping was confirmed by both SIMS and XPS. XPS studies revealed that the nitrogen content of the films synthesized at 300 °C (3.2%) is high compared to that of films made at 350 °C (1.3%).