Calculated hydroxyl A2 sigma --> X2 pi (0, 0) band emission rate factors applicable to atmospheric spectroscopy

A calculation of the A2 sigma --> X2 pi (0, 0) band emission rate factors and line center absorption cross sections of OH applicable to its measurement using solar resonant fluorescence in the terrestrial atmosphere is presented in this paper. The most accurate available line parameters have been used. Special consideration has been given to the solar input flux because of its highly structured Fraunhofer spectrum. The calculation for the OH atmospheric emission rate factor in the solar resonant fluorescent case is described in detail with examples and intermediate results. Results of this calculation of OH emission rate factors for individual rotational lines are on average 30% lower than the values obtained in an earlier work.     

On Jacobian Ideals Invariant by a Reducible Action

This paper deals with a reducible action on the formal power series ring. The purpose of this paper is to confirm a special case of the Yau Conjecture: suppose that acts on the formal power series ring via . Then modulo some one dimensional representations where is an irreducible representation of dimension or empty set and . Unlike classical invariant theory which deals only with irreducible action and 1--dimensional representations, we treat the reducible action and higher dimensional representations succesively.

     

Temperature Effects on Structural and Functional Properties of Rat Lens Phe71 Mutant αA‐Crystallins

In order to explore whether hydrophobicity or charge at the 71^th residue is important for chaperone‐like activity, wild type (wt) and two mutant αA‐crystallins, F71W and F71R, with an extra 11 residues including 6 histidines tagged at the N‐terminal were prepared. Chaperone‐like activity toward dithiotreitol (DTT) induced insulin aggregation showed the 11 extra residues had little effect. The activity for F71W was as active as the wild type, while F71R was much less active. For the wild type and F71W, the activity increased with the increase of molar quantity; surprisingly, for F71R it caused a drastic decline. ANS fluorescence measurements showed F71R had the highest surface hydrophobicity, suggesting positive charge at this site caused the conformational alteration leading to the increase of hydrophobicity and this hydrophobicity resulted in the formation of high molecular weight aggregates (> 2000 kDa) observed from the thermal stability study. The thermal stability study revealed F71W was the most thermally stable crystallin. Chaperone‐like activity studies at various temperatures suggested the monomer and oligomer, 650 kDa, were responsible for chaperone function and surface hydrophobicity was not the prerequisite for activity. Near‐UV CD studies showed β‐sheet was the major secondary structure for all three crystallins and F71R had a higher percentage of random coil.     

Method of Lines Based on Finite Element Discrete Technique to Analyze Eigenvalues of Waveguides

In this paper, a novel numerical technique to solve electromagnetic boundary value problem is described. This finite element based method of lines is developed by combining finite element method and the method of lines, so that it not only has high flexibility to treat geometrically and compositionally complex problems but also maintains high accuracy of semi-analytical technique. The geometry discretization, element mapping, element trial function and standard ordinary differential equation construction are discussed in details. Our numerical result demonstrates that this method can successfully solve the complex problems with fewer mesh lines when compared with conventional method of lines.     

A simplified predictive model for high-fluence ultra-short pulsed laser ablation of semiconductors and dielectrics

Ultra-short pulsed laser ablation is a very complicated process and a predictive model is very desirable for process design and optimization in practical applications. However, the molecular dynamics or hydrodynamic models, although they are powerful and necessary tools for the study of the fundamental physics, are time-consuming and difficult to apply for practical applications. In this paper, a predictive, simplified and easy to apply model has been developed for high-fluence ultra-short laser ablation of semiconductors and dielectrics. Unlike many other simplified models, this model does not involve any free adjustable variables. The model predictions agree well with experimental measurements for femtosecond laser ablation, while the model is not very applicable for pulse durations more than ∼10 ps.     

A study of the recirculating flow in planar,symmetrical branching channels

A numerical method is employed to examine the flow in symmetrical, two‐dimensional branches of Y shape and Tee shape. The methodology is based on a pressure‐correction procedure within the frame of unstructured grids. Specified pressures are imposed at the outlets of the two branches. The area ratio of the branch is allowed to vary in the range of 2–3. Separation of the flow in the bifurcating region is inevitable. With equal outlet pressures, symmetrical flow patterns prevail except for the Y type branch under the conditions of high Reynolds numbers and large area ratios. This implies that the Y‐branch flow is more sensitive to small disturbances. It is shown that with a slightly higher pressure imposed on one of the two branches the structure of the recirculating flow for the Y type is greatly affected and the flow rate is reduced dramatically in the high‐pressure branch channel. In contrast, the influence on the Tee type branch is much lower since the flow behaves like a jet impinging on a confined duct. Copyright © 2005 John Wiley & Sons, Ltd.     

Fabrication of ll-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

Fine silica-like fines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist （HSQ）. By precisely controlling the mask-wafer gap at 10μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.     

Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist (HSQ). By precisely controlling the mask-wafer gap at 10μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.     

Syntheses of L‐Glutamic Acid Analogues for Neuroexcitatory Activity Studies

Starting from D–serine, (2S,3S)‐, (2S,3R)‐substituted‐L‐glutamic acids were prepared via Claisen rearrangement methodology. A variety of the substituents can be introduced at the C‐3 of the L‐glutamic acid backbone.