Muonium states in semiconductor crystals: Quantum-chemical calculations

The electronic structure of muonium (Mu) located at the bond-centered sites of the silicon and diamond crystals is calculated by the intermediate neglect of differential overlap method. Calculations of the electronicg- and hyperfine interaction tensors of the impurity atom are performed. The results obtained are compared to the experimental properties of “anomalous” muonium Mu^*. It is shown that the properties of Mu located at the bond-centered sites of the Si and C lattices are in qualitative agreement with the observed properties of Mu^*.     

Planar nematic anchoring on SiO-coated substrates

Summary The nematic planar anchoring is usually explained by using simple elastic models: the surface easy axis corresponds to the surface direction that minimizes the excess of nematic elastic energy. When anisotropic rough substrates are used to align nematic liquid crystals, due to the complex surface morphology, usual elastic models are not directly applicable. This paper presents quantitative topographical data of rough substrates, obtained with oblique SiO evaporation under vacuum for nematic planar anchoring. Experimental data are obtained by means of Atomic Force Microscopy and they are used to demonstrate the self-affine nature of these substrates and to relate the nematic anchoring with the anisotropy of the local fractal properties of the substrate itself. Paper presented at the I International Conference on Scaling Concepts and Complex Fluids, Copanello, Italy, July 4–8, 1994.     

OSCILLATION CONVERGENT THEOREMS FOR THE V^2-INTEGRAL

The V^t-integral as defined in[2], which is eqnivalent to M^2-integrsl as defined in Trigonometre series by Zygmund is used to sum trigonometric seies in[1]. In this paper, some convergent theorems of V^2-integral are established.     

Low-energy ion-assisted control of interfacial structures in metallic multilayers

A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-assisted deposition of multilayers. However, complete flattening with simultaneous ion assistance could not be achieved without some mixing between the layers when a constant ion energy approach was used. It was found that multilayers with lower interfacial roughness and intermixing could be grown either by modulating the ion energy during the growth of each metal layer or by utilizing ion assistance only after the completion of each layers deposition. In these latter approaches, relatively high-energy ions could be used since the interface is buried and less susceptible to intermixing. The interlayer mixing dependence upon the thickness of the over layer has been determined as a function of ion energy.     

Analytical and numerical investigation of the three-dimensional viscous shock-layer on blunt solids

Translated from Zhurnal Prikladnoi Mekhaniki i Tekhnicheskoi Fiziki, No. 4, pp. 81–88, July–August, 1991.