Gallium-boron donor-acceptor bonds

Examples of compounds with gallium-boron donor-acceptor bonds, HC[MeC(2,6-pri2C6H3)N]2Ga-->B(C6F5)3 3 and (eta 5-C5Me5)Ga-->B(C6F5)3 4 have been prepared by treatment of the free gallanediyls with B(C6F5)3; the structures of both compounds were determined by X-ray crystallography.     

LOW OXIDATION STATE GROUP 15 ELEMENTS AS PNICTA-WITTIG REAGENTS

We have synthesized a new As(I) salt and performed a Density Functional Theory investigation into the use of such compounds as pnicta-Wittig reagents.     

N-tert-Butoxycarbonyl (BOC) Deprotection Using Boron Trifluoride Etherate

A mild and efficient procedure is described for the removal of the tert-butoxycarbonyl (BOC) group using boron trifluoride etherate and molecular sieves in dichloromethane at room temperature. The scope of this procedure is explored for the deprotection of a variety of amines including amino acid derivatives.     

Reversible,Photoinduced Activation of P4 by Low‐Coordinate Main Group Compounds

Two unique systems based on low‐coordinate main group elements that activate P₄ are shown to quantitatively release the phosphorus cage upon short exposure to UV light. This reactivity marks the first reversible reactivity of P₄, and the germanium system can be cycled 5 times without appreciable loss in activity. Theoretical calculations reveal that the LUMO is antibonding with respect to the main group element–phosphorus bonds and bonding with respect to reforming the P₄ tetrahedron, providing a rationale for this unprecedented activity, and suggesting that the process is tunable based on the substituents.     

Re-defining the kinetics of redox reactions on passive metal surfaces

It is known that the kinetics of redox reactions occurring on the surfaces of passive metals depend upon the properties of the passive film, ostensibly due to quantum mechanical tunnelling (QMT) of electrons and holes between the metal and the redox couple at the barrier layer/solution (bl/s) interface. In this paper, the tunnelling probability is used to inter-convert the exchange current densities for the redox reactions occurring at the bl/s interface and on the hypothetical bare metal surface. We review our previous work on combining QMT theory with the point defect model (PDM), which provides an analytical expression for the bl thickness as a function of voltage. By combining QMT theory and the PDM, we derive a modified form of the generalized Butler-Volmer equation that requires as input only the kinetic parameters for the redox reaction on the hypothetical bare surface and parameters contained in the PDM. The application of the theory is illustrated with reference to the corrosion of carbon steel in concrete pore solution, to calculating the corrosion potential of, and crack growth rate in, sensitized type 304 SS in boiling water reactor (BWR) coolant circuits, and the use of hydrogen oxidation on platinum to determine the thickness of the bl as a function of voltage and temperature. This illustrates a new, powerful technique for probing the formation of passive films on metal surfaces.

     

Dirac Equation in an Axial Coulomb Potential

We consider solutions to the Dirac equation in the presence of an external axial vector potential coupled to the spinor field psi through the interaction term . There turn out to be no bound-state energies in this system consistent with a normalizable wave function.