Research of spatial resolution in external electro-optic probing

A new method, based on zero point of longitudinal electric field, was used to determine the spatial resolution of external electro-optic (EO) probing equipment. Considering the diffraction of Gauss beam, the result of external EO probing was simulated which was in accordance with the experiment. A spatial resolution <1 μm was demonstrated initially in our equipment using 650 nm laser diode as probe beam and semi-insulating GaP as probe tip.     

Regularization of Discrete Ill-Posed Problems

The paper concerns conditioning aspects of finite-dimensional problems arising when the Tikhonov regularization is applied to discrete ill-posed problems. A relation between the regularization parameter and the sensitivity of the regularized solution is investigated. The main conclusion is that the condition number can be decreased only to the square root of that for the nonregularized problem. The convergence of solutions of regularized discrete problems to the exact generalized solution is analyzed just in the case when the regularization corresponds to the minimal condition number. The convergence theorem is proved under the assumption of the suitable relation between the discretization level and the data error. As an example the method of truncated singular value decomposition with regularization is considered. This revised version was published online in July 2006 with corrections to the Cover Date.     

Asymptotic Analysis of the Current-Voltage Curve of a pnpn Semiconductor Device

We consider the one-dimensional steady-state semiconductor deviceequations modelling a pnpn device. There are two relevant scalingsof the equations corresponding to small and large applied voltages.In both scalings, the semiconductor equations can be consideredas singularly perturbed. It turns out that the small-voltagescaling breaks down for current values between two saturationcurrents. In that interval, the large-voltage scaling has tobe employed. For both scalings, we derive the first-order termsof an asymptotic expansion and show that the reduced problemhas a solution. An example verifies that the current-voltagecurves obtained have the expected qualitative structure.     

Structure and electrochemical behaviour of 4,7-diazaheptyl-trimethoxy-silane and vinyl-trialkoxy-silane adsorbed at silver surface

Novel self-assembled monolayers were obtained on silver using 4,7-diazaheptyl-trimethoxy-silane (SiN) and vinyl-trialkoxy-silane (SiVA, where the alkyl group is 3,6,9,12,15,18,21,24,27,30,33,36,39,42,45,48,51,54,57,60-eicozaoxa- hexaheptaconan). It was shown that thus modified metal surface was protected against electrooxidation. A densely packed monolayer remained stable and did not desorb from the Ag electrode on the potential cycling. The structure of SiN and SiVA as well as their complexes with Li⁺ cations were calculated and visualised by the AM1d and PM5 semi-empirical methods.     

Spectral decomposition of an elementary 3-fermion 2-body operator

The eigenvalues and eigenfunctions of an elementary 3-fermion 2-body operator 3P²_g∧I¹A³∑_{1≤i≤j≤3}P²_g(i, j)A³ acting on a 3-particle antisymmetric finite-dimensional Hilbert space have been found. Here P_g² denotes the projection operator onto a 2-particle antisymmetric function g², while A³ denotes the 3-particle antisymmetrizing operator.     

Synthesis and chiroptical properties of two new planar-chiral macrocycles

Could simple intraannular-arm macrocyclic systems exist in enantiopure stable forms? The effective synthesis of two representative compounds of such a class, their resolution into enantiomers, and experiments justifying their stability toward racemization are presented.     

On Non-Continuous Dirichlet Processes

We introduce here some Itô calculus for non-continuous Dirichlet processes. Such calculus extends what was known for continuous Dirichlet processes or for semimartingales. In particular we prove that non-continuous Dirichlet processes are stable under C ¹ transformation.