Out-of-plane low field anisotropic magnetoresistance in Nd0.51Sr0.49MnO3 thin films

A comparative study of the out-of-plane anisotropic magnetoresistance (AMR) in single crystalline and polycrystalline thin films of phase separated manganite Nd_0.51Sr_0.49MnO₃ has been carried out. On-axis DC magnetron sputtering was used to deposit the single crystalline films (30 and 100 nm in thickness) on single crystal (0 0 1) LaAlO₃ (LAO) and polycrystalline films (100 nm) on (1 0 0) Yttrium-stabilized ZrO₂ (YSZ) substrates. The in-plane and out-of-plane magnetotransport properties of these films differ significantly. A large low field AMR is observed in all the films. AMR shows a peak below the insulator-metal transition temperature in the single crystalline films, while the same increases monotonically in the polycrystalline film. Relatively larger low field AMR (∼20% at T=78 K and H=1.7 kOe) in the polycrystalline films suggests the dominance of the shape anisotropy.     

Inverted equations of state for solids under high pressures

In the present communication we have reviewed some inverted type equations of state for solids under high pressures. An inverted equation of state (EOS) gives volume as a function of pressure for a solid under isothermal conditions. We have considered various equations of state proposed by earlier workers which express volume as a function of pressure. Expressions for bulk modulus and its pressure derivatives based on such EOSs are obtained and reported here. It is emphasized here that the high pressure derivative properties are very sensitive to the forms of equations of state representing volume-pressure relationships. We have also studied the thermoelastic properties of solids based on pressure derivatives of bulk modulus. Applications have been extended in the present review article to the solids which are metals as well as non-metals including geophysical minerals present in the lower mantle and core of the Earth.     

Photoluminescence,thermoluminescence and electron spin resonance studies on Eu<Superscript>3+</Superscript> doped Ca<Subscript>3</Subscript>Al<Subscript>2</Subscript>O<Subscript>6</Subscript> red phosphors

Tricalcium aluminate doped with Eu³⁺ was prepared at furnace temperatures as low as 500°C by using the convenient combustion route and examined using powder X-ray diffraction, scanning electron microscope and photoluminescence techniques. A room-temperature photoluminescence study showed that the phosphors can be efficiently excited by UV/Visible region, emitting a red light with a peak wavelength of 616 nm corresponding to the ⁵D₀–⁷F₂ transition of Eu³⁺ ions. The phosphor exhibits three thermoluminescence (TL) peaks at 195°C, 325°C and 390°C. Electron Spin Resonance (ESR) studies were carried out to study the defect centres induced in the phosphor by gamma irradiation and also to identify the defect centres responsible for the TL process. Room-temperature ESR spectrum of irradiated phosphor appears to be a superposition of three distinct centres. One of the centres (centre I) with principal g-value 2.0130 is identified as O⁻ ion while centre II with an axially symmetric principal values g _∥=2.0030 and g _⊥=2.0072 is assigned to an F⁺ centre (singly ionized oxygen vacancy). O⁻ ion (hole centre) correlates with the TL peak at 195°C and the F⁺ centre (electron centre), which acts as a recombination centre, is also correlated to the 195°C TL peak. F⁺ centre further appears to be related to the high temperature peak at 390°C. Centre III is also assigned to an F⁺ centre and seems to be the recombination centre for the TL peak at 325°C.     

Temperature and angular momentum dependence of the quadrupole deformation in sd-shell

Temperature and angular momentum dependence of the quadrupole deformation is studied in the middle of the sd-shell for ²⁸Si and ²⁷Si isotopes using the spherical shell model approach. The shell model calculations have been performed using the standard universal sd-shell (USD) interaction and the canonical partition function constructed from the calculated eigensolutions. It is shown that the extracted average quadrupole moments show a transitional behaviour as a function of temperature and the infered transitional temperature is shown to vary with angular momentum. The quadrupole deformation of the individual eigenstate is also analysed.     

100 MeV Si8+ ion induced luminescence and thermoluminescence of nanocrystalline Mg2SiO4:Eu3+

Nanoparticles of Mg₂SiO₄:Eu³⁺ have been prepared by the solution combustion technique and the grain size estimated by PXRD is found to be in the range 40–50 nm. Ionoluminescence (IL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ ions with fluences in the range 1.124–22.48×10¹² ions cm^?2 are carried out at IUAC, New Delhi, India. Five prominent IL bands with peaks at 580 nm, 590 nm, 612 nm, 655 nm and 705 nm are recorded. These characteristic emissions are attributed to the luminescence centers activated by Eu³⁺ cations. It is found that IL intensity decreases rapidly in the beginning. Later on, the intensity decreases slowly with further increase of ion fluence. The reduction in the ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O (ν₃) and Si–O (2ν₃) bonds present on the surface of the sample. The red emission with peak at 612 nm is due to characteristic emission of ⁵D₀→⁷F₂ of the Eu³⁺ cations. Thermoluminescence (TL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ cations with fluences in the range 5×10¹¹ ions cm^?2 to 5×10¹³ ions cm^?2 are made at RT. Two prominent and well resolved TL glows with peaks at ～220 °C and ～370 °C are observed. It is observed that TL intensity increases with increase of ion fluence. This might be due to creation of new traps during swift heavy ion irradiation.     

Improved crystal quality and harmonic generation in GaSe doped with indium

GaSe crystals were doped with indium, and improvements in the mechanical properties and second-harmonic efficiency over pure crystals were obtained. Both effects are due to an improvement in the crystal quality of the material, and it was shown that doping with low levels of indium did not alter the intrinsic value of the nonlinear d coefficient.     

Effect of buffer gas on the generation of eye-safe 1.54 μm radiation using the stimulated Raman scattering technique in CH4

Experimental results on the generation of 1.54 μm eye-safe radiation in pure CH₄, CH₄:He and CH₄:Ar mixtures pumped by the fundamental of an Nd:YAG laser, using the stimulated Raman scattering (SRS) technique, are described. A decrease in the energy conversion efficiency and degradation in the beam quality of S₁ was observed in pure CH₄ at high pump energies. This problem was overcome in CH₄:He and CH₄:Ar mixtures. Compared with the first Stokes (1.54 μm) energy conversion efficiency in pure CH₄, at a pump energy of 126 mJ, an enhancement of 50% in energy conversion efficiency was observed in the CH₄:Ar mixture (60% argon concentration) and as much as 100% in the CH₄:He mixture (60% helium concentration). The use of these buffer gas mixtures improved the spatial beam quality of the Stokes radiation considerably and also resulted in raising the pump threshold for optical breakdown of the Raman gain medium.     

AWG and EDFA based optical packet switch using feedback shared loop buffer memory

Optical packet switching provides high speed, data rate/format transparency, efficient use of bandwidth and flexibility. The major problem in the implementation of “all-optical” switching is contention which occurs when two or more packets arrive at the same time for the same destination. To resolve the contention, we have proposed an optical packet switch architecture based on WDM loop buffer memory in the feedback configuration. In that architecture, the contending packets are stored in a loop buffer module, and routed in the free time slots. The buffering duration in the recirculating loop is limited by a circulation limit. The analysis was been done to obtain the maximum number of allowed circulations. This paper proposes improved version of that optical packet switch architecture, to increase the number of maximum allowed circulations. The modification is done either by adding an extra erbium doped fiber amplifier (EDFA) in the original switch or by replacing the core space switch with arrayed waveguide grating (AWG). The performance analysis has been done by the simulations.     

Parametric dispersion and amplification in semiconductor plasmas: Effects of carrier heating

Using the hydrodynamic model of a semiconductor plasma, the influence of carrier heating on the parametric dispersion and amplification has been analytically investigated in a doped III-V semiconductor, viz. n-InSb. The origin of the phenomena lies in the effective second-order optical susceptibility (χ_e⁽²⁾) arising due to the induced nonlinear current density of the medium. Using the coupled-mode theory, the threshold value of pump electric field (|E_0T|_para) and parametric gain coefficient (α_para) are obtained via χ_e⁽²⁾. The relevant experiment has not been performed. Proper selection of the doping level not only lowers |E_0T|_para required for the onset of parametric excitation but also enhances α_para. The carrier heating induced by the intense pump modifies the electron collision frequency and hence the nonlinearity of the medium, which in turn further lowers |E_0T|_para and enhances α_para by a factor of ∼10³ and ∼2×10², respectively. The results strongly suggest that the incorporation of carrier heating by the pump in the analysis leads to a better understanding of parametric processes in solids and gaseous plasmas, which can be of great use in the generation of squeezed states.