从 ${\cal B}^0$ 到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子

设 $\varphi$ 是单位园盘 $D$ 到自身的解析映射, $X$ 是 $D$ 上解析函数的 Banach 空间, 对 $f\in X$, 定义复合算子$C_\varphi $ : $C_\varphi (f)=f\circ \varphi$. 我们利用从 ${\cal B}^0$到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子研究了空间 $E(p,q)$ 和 $E_0(p,q)$, 给出了一个新的特征.     

猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例

Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例．     

A note on minimum degree conditions for supereulerian graphs

A graph is called supereulerian if it has a spanning closed trail. Let G be a 2-edge-connected graph of order n such that each minimal edge cut SE(G) with |S|3 satisfies the property that each component of G−S has order at least (n−2)/5. We prove that either G is supereulerian or G belongs to one of two classes of exceptional graphs. Our results slightly improve earlier results of Catlin and Li. Furthermore, our main result implies the following strengthening of a theorem of Lai within the class of graphs with minimum degree δ4: If G is a 2-edge-connected graph of order n with δ(G)4 such that for every edge xyE(G) , we have max{d(x),d(y)}(n−2)/5−1, then either G is supereulerian or G belongs to one of two classes of exceptional graphs. We show that the condition δ(G)4 cannot be relaxed.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

可变抽样区间的非参数控制图

最近几年一些学者研究了可变抽样区间的质量控制图。Amin等提出了可变抽样区间(VSI)的非参数控制图———符号 (Sign)统计量图〔1〕。本文在此基础上研究位置VSI符号控制图的制定方法 ,并设计离散VSI符号控制图。符号控制图的优点是对非正态总体亦可应用 ,并且不需要过程方差的信息。本文将所设计的VSI符号控制图同固定抽样区间 (FSI)的常规图作比较 ,并举实例说明符号控制图的应用     

系数变号的半线性椭圆方程的正解

本文研究半线性椭圆方程Dirichlet问题-△u=α（x）f(u），x∈Ω， u（x）=0，x∈ЭΩ，正解的存在性，其中Ω为R^n中有界的带光滑边界的区域，α(x)可以变号。     

The Millimeter Wave Tomography Application for the Subsurface Imaging

In the present paper new results of modeling and experimental investigation on millimeter wave subsurface tomography are submitted. Tomographic algorithm is employed for imaging of subsurface objects in the case when conductivity of probed medium is not equal to zero. The possibilities and restrictions of this algorithm for image processing are shown both as a result of modeling and as a result of experiments. A new tomography setup allowing obtaining images of different inhomogeneities in dielectric media is considered.     

一类潜热型功能液固两相流体的定压比热研究

应用两相流与热物理理论，严格推导出一类潜热型功能液固两相流体的定压比热计算公式．     

不同重力环境下辐射加热材料表面着火特性分析

研究外界辐射加热下，不同重力环境中热薄燃料的着火特性．探讨了重力、环境氧浓度、环境压力及外界辐射强度对着火的影响．结果表明，随着重力的变化，存在不同的着火机制．在微重力和在高的环境氧浓度中，材料的着火延迟时间变短．压力减小，着火延迟时间增大．随着辐射强度的增大，着火延迟时间变小．     

Solitary waves and their bifurcations of KdV like equation with higher order nonlinearity

We investigate the KdV like equation with higher order nonlinearity ut + a(1 +bun)unux + uxxx = 0with n ≥ 1, a, b ∈ R and α≠ 0. The bifurcations and explicit expressions of solitary wave solutions for theequation are discussed by using the bifurcation method and qualitative theory of dynamical systems. Thebifurcation diagrams, existence and number of the solitary waves are given.