Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.     

Distortions of the magnetic structure of a thin antiferromagnetic layer in magnetic field

Distortions induced by an external magnetic field in the magnetic structure of a thin layer of a uniaxial collinear antiferromagnet with rough surfaces are studied using computer simulation. It is shown that, under certain conditions, the presence of atomic steps at the layer surfaces causes the antiferromagnetic layer to break up into domains. The character and magnitude of distortions are found for an arbitrary ratio of the distance between atomic steps to the order parameter correlation length. Original Russian Text ? A.I. Morosov, I.A. Morosov, A.S. Sigov, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 7, pp. 1228–1235.     

Specific features of nanosystems based on natural isoferroplatinum

Nanostructuring of natural isoferroplatinum crystals is revealed by atomic-force microscopy for the first time. Typical scales of ～30, 50, and 100 nm are determined and the self-affine character of their relation is established using a wavelet analysis.     

On the relationship between the ionization potential and the work function: Metals

A relationship is analyzed between the ionization energy of atoms I and the work function φ of a metal composed of these atoms. The transition energy ∑=I?φ is assumed to be the sum of kinetic K and coulombic C contributions. Contribution K is calculated in the framework of a model of uniform gas of quasi-free electrons, and C is determined from experimental values of Σ. Calculations performed for a wide range of metals have shown that the dimensionless coefficients determining the Coulombic contribution C differ insignificantly between various groups of metals. The relationships obtained have been used for determining the work function of binary alloys.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

New Heat-Resistant Polyimidates Derived from Bisphenols and Mono- and Dicarboxylic Acid Imidoyl Chlorides

New polyimidates were prepared from bisphenols and mono- and dicarboxylic acid imidoyl chlorides. The structures of the polymers were determined, and their physicochemical, chemical, and thermal properties were studied. The possibility of preparing film and compression materials with good mechanical characteristics from these polymers was examined.     

Relaxing local modes and the theory of low-frequency Raman scattering in glasses

Raman scattering in glasses is investigated theoretically. The experimental Raman spectra of glasses exhibit a low-frequency peak (at ～10 cm^?1) that, as a rule, is attributed to vibrational modes of nanometer-sized structural units (nanocrystallites). It is established that the elastic moduli of nanocrystallites must necessarily be dependent on their sizes due to the Laplace pressure effect. A theory of the low-frequency peak is constructed using a realistic size distribution function of nanocrystallites with allowance made for the Laplace pressure effect and the dissipation of vibrational energy. Within this theory, the shape of the low-frequency peak and its evolution with temperature can be analyzed quantitatively. The proposed approach offers a physical interpretation of the experimental data and provides insight into the relation of the characteristic nanocrystallite sizes to the elastic moduli and surface tension coefficients of materials.     

Experimental investigation of explosive plasma antennas

Explosion-produced plasma jets formed in free spece are experimentally investigated. The feasibility of emitting pulsed electromagnetic signals by plasma jets is shown, and the emitting conditions are studied. Comparison is made between the results of experiments with short and long plasma jets. When the jet passes through the field of a helix, a short-term increase in the emitted signal is detected. A linear parametric model of interaction between the plasma jet and an exciting electromagnetic signal is proposed. The operating performance of instrumentation developed for the investigation is presented.     

Nonlinear resistor based on a polymer-ceramic composition

The resistivity of composite nonlinear resistors (varistors) consisting of zinc oxide ceramic and high-density polyethylene, as well as IR spectra and X-ray diffraction patterns taken of the samples, are studied. The component composition of the resistor is shown to influence its resistivity and IR and X-ray spectra.     

1/f Noise in dye-sensitized solar cells and NIR photon detectors

All electronic devices are plagued with 1/f noise originating from many causes. The most important factors contributing to 1/f noise in a semiconductor is believed to be recombination of carriers and their trapping at defects and impurity sites. Adsorption of moisture and electron acceptor molecules enhances the intensity of 1/f noise. Amazingly, some molecular species that strongly chelate to the semiconductor surface, suppress 1/f noise owing to passivation of the recombination sites. Thus in addition to sensitization, the dye adsorbed on the nanocrystallites plays a key role in mitigation of recombinations. For this reason dye-sensitized heterojunctions could also find application as low noise NIR photon detectors. Experiments conducted with oxide semiconductors (TiO₂, ZnO, SnO₂) indicate that the mode of binding of dyes at specific sites determines the extent to which the recombination and 1/f noise are suppressed. The transport of electrons in a nanocrystalline matrix is diffusive with a diffusion coefficient D depending on the trapping and detrapping processes. Thus passivation of trapping sites by the adsorbed dye is expected to increase the response time which can be expressed as τ  L²/D, where L = thickness of the nanocrystalline film. Measurement techniques and construction of a dye-sensitized NIR photon detector will be discussed.