Determination of the parameters of semiconductor quantum dots in glassy matrices from the absorption and luminescence spectra and from saturation of the optical absorption

Optical methods are described for determining the parameters of semiconducting quantum dots synthesized in a glassy borosilicate matrix. The limitations of these methods and the magnitudes of their errors are analyzed. The parameters of CdS_xSe_1−x nanocrystals in the commercial glasses KS-10, OS-12, Corning 2–61, and other experimental samples are determined. Fiz. Tverd. Tela (St. Petersburg) 39, 1865–1870 (October 1997)     

Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy

Doping studies of the incorporation behaviour of three different dopants (Zn, In and Si) versus the misorientation of the (100) surface during MOVPE growth of GaAs have been carried out with diethylzinc, trimethylindium and disilane as precursors. The incorporation of the dopants has been studied as function of the input mole fraction dopant, growth temperature, degree and direction of misorientation. In order to explain the results we discuss the BCF theory and the nature of the steps as function of above mentioned parameters. It appears that the BCF theory alone cannot explain the results, a counteracting mechanism has been introduced based on preferential arsenic desorption from the step edges.     

Structural Transformations in Fe/Zr Bi- and Multilayers Induced by Ion-Beam Mixing

The Ar-ion-beam mixing of Fe/Zr bi- and multilayers is studied by conversion electron Mössbauer spectroscopy as a function of ion dose ranging from 1×10¹⁴ to 1×10¹⁷ at./cm². The mixing leads to amorphization of the Fe/Zr system. It was shown that the mixing process in bilayers depends strongly on the thickness of the Zr substrate. The amorphization is much more effective and occurs at lower ion doses in multilayers as compared to corresponding bilayers.     

1.2 Anorganische analyse

Ohne Zusammenfassung     

MEASUREMENT OF CONTACT ANGLE IN A CLEARANCE-FIT PIN-LOADED HOLE

A simple experimental technique using an instrumented pin was developed for the measurement of the load-contact variation in a clearance-fit, pin-loaded hole. The method is applicable to both conducting and nonconducting materials.