Wave attenuation in an elastic medium

This article examines the propagation of viscoelastic (elastic) waves in a medium consisting of two layers of finite thickness. It is found that there is a mechanical effect manifest in the monotonic dependence of the damping factor on the parameters of the system. These dependences have distinct maxima and minima, thus making it possible to optimize the damping properties of systems by varying their geometric parameters.Translated from Dinamicheskie, Sistemy, No. 4, pp. 57–62, 1985.     

The dynamic response of an inhomogeneous plasma diode to an appliedpotential drop

Recent measurements of the response to an applied step voltage in collisionless plasmas have demonstrated the importance of the initial ion density distribution for the resulting time evolution and the formation of electric double layers. The dynamic response of a plasma diode to an applied step voltage is studied by particle-in-cell simulations and an analytical model. It is shown that an ion-density cavity (a local ion-density minimum with a width of many Debye lengths) can support large potential drops for several electron transit times. The potential drop extends over a distance related to the cavity width. When the applied potential drop exceeds a certain critical value, which depends on the cavity depth, the drop instead concentrates in a cathode sheath, which also is the response obtained for homogeneous initial plasma. The existence regions for the two different response in the appropriate parameter plane are found from the simulations and shown to agree with the regions predicted analytically. The analytical potential profiles agree with those simulated     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

Magnetic behaviour and site occupation of YFe12-x V x (x=2,3,4)

The effects of vanadium substitution on the iron magnetism in YFe_12-x V _x compounds (x～2–4) have been studied by⁵⁷Fe Mössbauer spectroscopy. The preference of vanadium atoms for the 8i site of these ThMn₁₂-structure type compounds is confirmed. The rapid collapse of the iron sublattice magnetization with increasing vanadium concentration is analysed in terms of the ‘magnetic valence’ model.     

Synthesis of 4H-pyrans by O-cyclization of 1,5-diketones

Substituted 4H-pyrans were obtained in high preparative yields by the reaction of 1,5-diketones with acetic anhydride and boron trifluoride etherate in diethyl ether. It is assumed that the heterocyclization of 1,5-diketones includes a step involving the formation and transformations of an acyloxy carbonium ion.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 3, pp. 320–322, March, 1992.     

Acoustic effect of pulsed high-energy proton beams

Experimental data on the generation of acoustic radiation in solid targets by pulsed high-energy proton beams are outlined. The features of ultrasound generation in solids by beams of heavy charged particles are analyzed, and the possibility of using the acoustic effect of heavy charged particles to investigate the interaction between radiation and condensed media and to determine particle energies is shown.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 95–99, August, 1991.     

Production of slow muonic hydrogen isotopes in vacuum

Muonic hydrogen isotopes (μ⁻ p, μ⁻ d, and μ⁻t) are simple quantum mechanical systems ideally suited for studies of numerous fundamental phenomena in electroweak and strong interactions as well as in applied areas such as muon chemistry or muon catalyzed fusion. Emission of muonic hydrogen isotopes into vacuum helps to overcome the limitations which are normally imposed on conventional investigations with gaseous and liquid targets. A proof of principle experiment for this new technique was performed at TRIUMF last year. Negative muons with 30 MeV/c momentum were stopped in a thin film of solid hydrogen and produced very low energy μ⁻d in vacuum. The distribution center of the normal velocity components of emitted μ⁻d atoms was measured to be ∼1 cm/μs. The yield of μ⁻d in vacuum is an increasing function of H₂ film thickness δ up to a value of δ≥1 mm.     

Quantum diffusion of muonium in GaAs

The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT ₁ relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 10¹⁰ s⁻¹ (corresponding diffusion constantD≈10⁻⁶ cm²s⁻¹) at lower temperatures as well as at room temperature.