Kinetic study of n-heptane oxidation

The oxidation of n-heptane has been studied in a jet-stirred flow reactor in the temperature range 950–1200 K at atmospheric pressure for a wide range of fuel-oxygen equivalence ratios (0.2 to 2.0). A chemical kinetic reaction mechanism developed from previous studies on smaller hydrocarbons and extended to C₆ and C₇ species was used to reproduce the experimental data. Good agreement between computed and measured concentrations of major chemical species was obtained for the entire range of experimental conditions. Sensitivity analyses were carried out to identify the reactions having the greatest influence on the modeling results. The major reaction paths for n-heptane consumption and for the formation of the main products have been identified. In addition n-heptane ignition delays behind a reflected shock wave measured by other investigators were used to validate the present reaction mechanism at higher temperature and pressure.     

Liquid crystal side chain polysiloxanes containing various proportions of non-mesogenic units

Recent studies have established that side chain polymeric liquid crystals composed of mesogenic and non-mesogenic side groups keep their liquid-crystalline properties even for a low proportion of mesogens. We show that the detailed structures of three kinds of new diluted liquid crystal polysiloxanes depend on the nature of the co-substituent as well as on the proportion of the silicon sites occupied by the mesogenic groups. Mixtures of these systems with low molar mass liquid crystals were also investigated in terms of compatibility and/or stabilization of smectic A phases.     

Evaluation of peroxyoxalate chemiluminescence postcolumn detection of fluphenazine in urine and blood plasma using high performance liquid chromatography

Peroxyoxalate chemiluminescence may be used for sensitive postcolumn detection of phenothiazine analytes separated by high performance liquid chromatography with appropriate optimization of measurement conditions such as solvent, pH and oxalate ester. Detectability of fluorescent analytes by chemical excitation varies greatly, but analytes with low oxidation potentials are generally more readily detected at low levels, as demonstrated for phenothiazines, an important class of fluorescent drugs. Some improvement in detection limits is observed for fluphenazine when chemiluminescence detection is compared to conventional fluorescence detection. Because of the specificity of chemical excitation, fewer interferences from fluorescent impurities in a urine matrix are observed.     

Effect of plasma treatment of the dielectric on electroforming of a thin-film MIM system

It was found that when a thin dielectric film is exposed to the plasma of a low-voltage gas discharge, channels with elevated conductivity form in the film and these channels significantly facilitate the subsequent electroforming of the MIM system. It is concluded from the experimental data that even in the case of metallic electrodes highly conducting channels are formed in the dielectric by electronic processes occurring under the conditions of a strong electric field and not by diffusion of the electrode material.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 94–98, October, 1991.     

Mössbauer gamma echo

By applying stepwise phase modulation of recoilless gamma radiation in a coincidence experiment, constructive interference is produced in transmission geometry between the source and the absorber fields. The resulting regenerated decay signal is called a gamma echo. Here it is demonstrated that during the decay of the 14.4 keV state of⁵⁷Fe multiple echo signals can be generated.     

Weak antilocalization in a 2D electron gas with chiral splitting of the spectrum

Motivated by the recent observation of the metal-insulator transition in Si MOSFETs, a study is made of the quantum interference correction to the conductivity in the presence of the Bychkov-Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The antilocalization correction vanishes, however, in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si MOSFETs is discussed. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 118–123 (25 January 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.