全文获取类型
收费全文 | 586710篇 |
免费 | 7887篇 |
国内免费 | 2455篇 |
专业分类
化学 | 316211篇 |
晶体学 | 8672篇 |
力学 | 25654篇 |
综合类 | 72篇 |
数学 | 70577篇 |
物理学 | 175866篇 |
出版年
2021年 | 4739篇 |
2020年 | 5345篇 |
2019年 | 5791篇 |
2018年 | 7482篇 |
2017年 | 7398篇 |
2016年 | 11216篇 |
2015年 | 7173篇 |
2014年 | 10953篇 |
2013年 | 26491篇 |
2012年 | 20906篇 |
2011年 | 25549篇 |
2010年 | 17978篇 |
2009年 | 17786篇 |
2008年 | 23642篇 |
2007年 | 23602篇 |
2006年 | 21932篇 |
2005年 | 19702篇 |
2004年 | 18062篇 |
2003年 | 15896篇 |
2002年 | 15697篇 |
2001年 | 17581篇 |
2000年 | 13343篇 |
1999年 | 10270篇 |
1998年 | 8629篇 |
1997年 | 8386篇 |
1996年 | 8178篇 |
1995年 | 7276篇 |
1994年 | 7256篇 |
1993年 | 7034篇 |
1992年 | 7777篇 |
1991年 | 7858篇 |
1990年 | 7506篇 |
1989年 | 7266篇 |
1988年 | 7185篇 |
1987年 | 7057篇 |
1986年 | 6771篇 |
1985年 | 8890篇 |
1984年 | 9038篇 |
1983年 | 7332篇 |
1982年 | 7570篇 |
1981年 | 7365篇 |
1980年 | 6816篇 |
1979年 | 7346篇 |
1978年 | 7674篇 |
1977年 | 7596篇 |
1976年 | 7526篇 |
1975年 | 6991篇 |
1974年 | 7069篇 |
1973年 | 7049篇 |
1972年 | 5164篇 |
排序方式: 共有10000条查询结果,搜索用时 93 毫秒
991.
The glow curve structures for LiF:Mg,Cu,Na,Si TL detectors with various dopant concentrations and sintering temperatures were investigated for the improvement of the glow curve structure and sensitivity of the TL detector. The dopant concentrations were varied over the following ranges: Mg (0–0.25 mol%), Cu (0–0.07 mol%), Na and Si (0–1.5 mol%). With increasing Cu concentration, the intensity of the main peak was intensified and reached a maximum at a concentration of 0.05 mol%. The high-temperature peak was reduced. The dependency of the main peak intensity on the Mg concentration exhibits a sharp maximum at 0.2 mol%. The intensity of the high-temperature peak tends to rise slightly with increasing Mg concentration. It was found that the optimum concentrations of the dopants in the LiF:Mg,Cu,Na,Si TL material are Mg: 0.2 mol%, Cu: 0.05 mol%, Na and Si: 0.9 mol%. The dependency of the main peak intensity on sintering temperature exhibits a very sharp maximum at 830°C. The high-temperature peak was rapidly reduced after 825°C. 相似文献
992.
M. Missous C. Mitchell J. Sly K. T. Lai R. Gupta S. K. Haywood 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):496
Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In0.84Ga0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated. 相似文献
993.
J. R. Lindle W. W. Bewley I. Vurgaftman J. R. Meyer J. L. Johnson M. L. Thomas W. E. Tennant 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):558
A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. 相似文献
994.
995.
H. Akimune T. Yamagata S. Nakayama M. Fujiwara K. Fushimi K. Hara K. Y. Hara K. Ichihara K. Kawase K. Matsui K. Nakanishi A. Shiokawa M. Tanaka H. Utsunomiya M. Yosoi 《Physics of Atomic Nuclei》2004,67(9):1721-1725
Trinucleon molecular structures in 6He and 6Be were investigated by using the 6Li(7Li, 7Be)6He reaction at 455 MeV and 6Li(3He, t)6Be reaction at 450 MeV, respectively. Binary decays into t + t from a broad state at E x =18.0±1.0 MeV in 6He and into 3He + 3He from one at E x =18.0±1.2 MeV in 6Be, respectively, were observed by measuring trinucleon cluster decays in coincidence with reaction particles. The branching ratios for binary decay were estimated to be about 0.7 for 6He and 6Be. These large branching ratios show that a trinucleon cluster state exists as an isobaric partner around E x =18 MeV in 6He and 6Be. 相似文献
996.
A. G. Milekhin A. I. Nikiforov M. Yu. Ladanov O. P. Pchelyakov S. Schulze D. R. T. Zahn 《Physics of the Solid State》2004,46(1):92-96
This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO2 layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed. 相似文献
997.
Electron microscopy is used to study changes in the dislocation structure of high-purity rolled (001)[110] tungsten single crystals during short-term high-temperature annealings. The effects of the annealing temperature and time on the formation of low-angle boundaries are investigated. Local defects, which are similar to those detected earlier upon annealing in the structure of molybdenum single-crystal ribbons, are found to form and dissociate upon annealing. These defects are concluded to have a dislocation nature. 相似文献
998.
The distribution of a local magnetic field near the surface of a uniaxial anisotropic type-II superconductor is determined in the framework of the London model in the case when the Abrikosov vortices are randomly distributed in the superconductor. The distribution of a local magnetic field is obtained as a function of the distance from the surface of the superconductor. It is demonstrated that the shape of the distribution of the local magnetic field near the surface differs substantially from that in the bulk of the superconductor. This difference should be taken into account in interpreting experimental data on the local magnetic field in the surface region of the superconductor and in thin superconducting films (with a thickness of less than or equal to λ, where λ is the depth of penetration of the magnetic field into the superconductor). It is shown that, as in the case of a regular lattice of vortices, the value of λ can be determined from observations of the distribution of the local magnetic field in type-II superconductors with an uncorrelated random lattice of vortices. 相似文献
999.
In terms of two-dimensional dislocation-disclination dynamics, a theoretical model is developed to describe the decay of a low-angle tilt boundary in a deformed nanocrystalline material under the action of an externally applied elastic stress and of the elastic field of a neighboring decayed boundary. The critical external stresses are calculated at which the boundary decays and the dislocations making up this boundary either are trapped by the boundary that decayed earlier or break away from both boundaries. The decay of a low-angle tilt boundary is shown to result in a substantial decrease in the critical decay stresses for the neighboring boundaries, which can cause an avalanche-like chain decay of low-angle boundaries yielding high-density ensembles of mobile dislocations capable of carrying substantial plastic deformations and of forming shear bands in deformed nanocrystalline materials. 相似文献
1000.
Interaction between an rf electromagnetic field and the Fe/Cr superlattice placed in a rectangular waveguide so that a high-frequency
current passes in the plane of superlattice layers is considered. The transmission coefficient versus the magnetic field strength
is found at centimeter waves, and a correlation between this dependence and the field dependence of the dc magnetoresistance
is established. It is shown that a change in the transmission coefficient may greatly exceed the giant magnetoresistance of
the superlattice. The frequency dependence of the microwave measurements has an oscillatory character. The oscillation frequencies
are analyzed in terms of wavelet transformation. Two types of oscillation periods are found to exist, one of which corresponds
to the resonance of waves traveling in the superlattice along the direction parallel to the narrow wall of the waveguide. 相似文献