Chemical bonding in isolated molecules and crystals of zwitterionic pentacoordinate silicon chelates

The electronic structures of a number of zwitterionic pentacoordinate silicon chelates were investigated using the results of X-ray diffraction studies and quantum-chemical calculatoins by the MPW1PW91/6-311G(d) method. The topological analysis of the electron density distribution function and the study in the framework of the natural bond orbital partitioning scheme showed that the character of chemical bonding in the axial fragments of the molecules under consideration changes from dative to three-center, four-electron as the silicon atom assumes a trigonal-bipyramidal coordination.     

The Electrodynamics of Granular High-Temperature Superconducting Media

The electrodynamic properties of granular high-temperature superconducting media are studied. Relations for the surface resistance and impedance of a high-temperature superconducting medium are derived. The temperature and frequency dependence of the phase velocity and group velocity and depth of penetration of the electromagnetic field into the Josephson medium are calculated. The possibility of using high-temperature superconducting films as high-efficiency shields is shown. The shielding properties are improved appreciably with increase in the critical current density of the high-temperature superconducting film. The shield thickness is several microns or several fractions of a micron for a critical current density of >10⁷ A/m². The results obtained can be used in designing superhigh-frequency shields, microstrip lines, and other devices based on high-temperature superconducting Josephson media.     

Preparation of Anodized Aluminum for Electrodeposition of Metals (Co-Cu System) into Pores of Oxide

Conditions under which anodized aluminum is treated first in a dilute solution of phosphoric acid and then in a fluoroborate immersion solution in order to deposit a multilayer system of cobalt and copper in the pores in the oxide were studied.     

Stochastic radiative transfer in a finite plane-parallel medium with general boundary conditions

The time-independent radiative transfer problem in a scattering and absorbing planar random medium with general boundary conditions and internal energy source is considered. The medium is assumed to consist of two randomly mixed immiscible fluids, with the mixing statistics described as a two-state homogeneous Markov process. The problem is solved in terms of the solution of the corresponding free-source problem with simple boundary conditions which is solved using Pomraning-Eddington approximation in the deterministic case. A formalism, developed to treat radiative transfer in statistical mixtures, is used to obtain the ensemble-averaged solution. The average partial heat fluxes are calculated in terms of the albedoes of the source-free problem. Results are obtained for isotropic and anisotropic scattering for specular and diffused reflecting boundaries.     

Vanadium valency charge state in solid solutions ScNb2−2xTa2xVO9

Phase equilibria in the Sc₂O₃-V₂O₅-Nb₂O₅-Ta₂O₅ system and properties of ScNb_2−2xTa_2xVO₉ phases were studied by X-ray phase analysis, optical and radio spectroscopy. A continuous series of solid solutions was shown to exist at 0≤x≤1. V(IV) centers with different crystallographic surrounding were detected for all the considered compositions. A correlation between the number of V(IV) ions and the width of the forbidden gap in the solid solutions was found.     

Quantum frequency standards based on the soliton state of a Bose-Einstein condensate

A method for stabilizing frequency based on using the soliton state of the Bose-Einstein condensate of alkali metal atoms as an atomic source was suggested. The critical total number of lithium condensate particles at which the existence of a quasi-one-dimensional soliton in the condensate was possible and the lifetime of such a soliton were estimated. The attainable accuracy of measuring reference transition frequencies in the suggested standard was shown to be substantially higher than with the known quantum frequency standards.     

Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1−x strained quantum wells

The excitonic properties of a ZnSe/ZnS_xSe_1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS_0.18Se_0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra.     

Time Evolution of Vibration-Induced Excited State Decay

A simple model consisting of two electronic levels and one vibrational mode (phonon) was theoretically studied. The electronic-vibrational interaction was linear in the vibrational displacement. The vibrational mode was taken in the harmonic approximation and was attached to the thermal bath formed by the ambient environment. The kinetic constants of the vibrational dissipation were of the second order in the vibrational-bath coupling and were taken in the Markovian limit. Although, depending on the parameters of the model, different curves of the non-radiative vibration-induced excited state decay were obtained, in general, three time intervals, corresponding to different physical behaviour, were found. In the short-time interval, small oscillations superimposed on the excited state decay were observed. They were determined by the vibrational frequency and influenced by electronic-vibrational coupling. In the middle-time interval, almost quasi-exponential decay was detected; its rate constant increased with stronger electronic-vibrational interaction and speed of vibrational relaxation. In the long-time interval, the decay was very slow and, under special conditions, even an asymptotic non-zero excited state population was observed. Its value increased with the strength of the off-diagonal electron-vibrational coupling. Links of the parameters of the model with quantum chemical terms were estimated.     

GaAsN/AlAs/AlGaAs double barrier quantum wells grown by molecular beam epitaxy as an alternative to infrared absorption below 4 μm

In this work, we report on the design, growth and characterization of GaAsN/AlAs/AlGaAs double barrier quantum well infrared detectors to achieve intraband absorption below 4 μm. Due to the high effective mass of N-dilute alloys, it is common for these N-containing double barrier quantum well structures to have more than one bound state within the quantum well, enabling the possibility of achieving multispectral absorption from these confined levels to the quasi-bound. Based on a transfer matrix calculation we will study the influence of the potential parameters, in particular the well width and the introduction of a GaAs spacer layer in between the N-well and the AlAs barriers. We will compare the case in which there are two confined levels with the case in which only one level is bound, like in the conventional AlGaAs/AlAs/GaAs structures. On the basis of the simulation, we have grown and characterized some N-containing double barrier detectors. Moreover, an optimization of the post-growth annealing treatments of the GaAsN quantum well structures has also been performed. Finally, room temperature absorption measurements of both as-grown and annealed samples are presented and analyzed.