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941.
LI Ya-feng~ ** ZHANG Li-mei~ WU Lei-lei~ WANG Sheng-hai~ WANG Hai-lian~ SHANG Xuan-xuan~ . College of Chemistry Molecular Engineering . College of Mathematics Physics Qingdao University of Science & Technology Qingdao P. R. China 《高等学校化学研究》2006,(6)
IntroductionThe interest in polyoxometalates that are widelyused in medical chemistry, catalyst reactions, and ma-terial sciences stems from their complicated aggregatesformed by means of corner-, edge- and face-sha-ring[1—4]. The exploitation of new str… 相似文献
942.
The aggregation of dansyl chloride (DNS-Cl) in acetone has been studied in detail by steady-state fluorescence techniques.It has been demonstrated that DNS-Cl is stable in acetone during purification and aggregation study processes.The aggregates are not solvolyzed in acetone,and do not take part n any chemical reactions either.It has been found that DNS-Cl tends to aggregate even when its concentration is much lower than its solubility in acetone.The aggregation is reversible,and both the aggregation and the deaggregation are very slow processes.Introduction of SDS has a positive effect upon the formation and stabilization of the aggregates. 相似文献
943.
本文对二种新合成的2,3-二羟基萘二钼和四钼多酸有机衍生物[n-Bu)4N]2[Mo2O5(OC10H6O)2](Ⅰ)和[n-Bu)4N]2[Mo4O10(OC10H6O)2(OCH3)2](Ⅱ)进行了红外光谱与核磁共振波谱研究,发现[Mo2O5]^2 中钼氧多桥键的红外振动频率较[Mo4O10(OCH3)2]^2 中钼氧多桥键的红外振动频率红移,而在配合物Ⅱ中2,3-二羟基中芳环的^1H化学位移较配合物Ⅰ中向低场移动。同时还发现含二钼配位中心[Mo2O5]^2 的[Mo2O5(OC10H6O)2]^2-与含四钼配位中心[Mo4O10(OCH3)2]^2 的[Mo4O10(OC10H6O)2(OCH3)2]^2-生成条件的差异仅仅只在反应体系的pH值的微小变化,说明钼多酸有机衍生物阴离子是对体系酸碱度极为敏感的物质。 相似文献
944.
Xinjian Yi Sihai Chen Yingrui Wang Bifeng Xiong Hongchen Wang 《International Journal of Infrared and Millimeter Waves》2002,23(12):1699-1704
V02-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V02-based microbolometer array are tested. 相似文献
945.
946.
Michael Höft Jochen Weinzierl Rolf Judaschke 《International Journal of Infrared and Millimeter Waves》2002,23(7):1127-1146
Holography is a promising technique for power combining applications in the frequency range of short millimeter and submillimeter waves. In this paper, quasi-optical holographic power combining circuits are investigated. An equivalent network is utilized which rigorously models horn arrays and biperiodic dielectric structures in order to design computer-generated holograms. We apply the network model to a 5-element quasi-optical power combiner and demonstrate its capability. The hologram is designed for 150 GHz and has an efficiency of 92.5 % with a 90 % bandwidth of 5.3 %. With the aid of a broadband waveguide power divider and a vector field measurement system, the circuit is analyzed. 相似文献
947.
Wang Yongqian Liao Xianbo Diao Hongwei Cheng Wenchao Li Guohua Chen Changyong Zhang Shibin Xu Yanyue Chen Weide Kong Guanglin 《中国科学A辑(英文版)》2002,45(10):1320-1328
A set of a-SiOx:H (0.52 <x< 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature
of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering,
X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are
structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:H and SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated.
The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that
the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded
in turn by the subshells of Si2O:H, SiO:H, Si2O3:H, and SiO2. 相似文献
948.
1 IntroductionForsolvingstiffinitialvalueproblemsforsystemsofODEsy′=f(y) ,y(t0 ) =y0 ,t0 <t≤T ,y0 ,y∈Rm,f :Ω Rm →Rm (1 .1 )manyparticularone blockmethodsoftheformYn+1= AYn+h( B0 F(Yn) + B1F(Yn+1) ) , A =A Im, Bi=Bi Im,A ,Bi∈Rr×r,Yn =(YTnr,… ,yT(n+1)r- 1) T,F(Yn) =(fT(ynr) ,… ,fT(y(n+1)r- 1) ) T,yj≈ y(tj) ,… 相似文献
949.
章利用基于三次B样条插值的边界元方法,对振动体外部声辐射问题进行了研究,对CHIEF法及其改进方法作了进一步的改进,提出在加权余量意义下,通过把内部Helmholtz积分方程与其对内点坐标取导后的方程式作线性叠加,在域外构作的一个小体积块上进行积分以形成补充方程,经与表面Helmholtz积分方程相结合,来求解任意频率下的声辐射问题,并以脉动球和摆动球作为算例,说明本提出的方法能够有效地克服在特殊频率处解的非唯一性问题。 相似文献
950.
V. T. Plaksiy O. N. Suchoruchko B. P. Yefimov A. P. Kasyanenko 《International Journal of Infrared and Millimeter Waves》2002,23(4):645-650
Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 102-103 times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work. 相似文献