STABLE DOUBLE LR ALGORITHM AND ITS ERROR ANALYSIS

In this paper, the normative matrices and their double LR transformation with origin shifts are defined, and the essential relationship between the double LR transformation of a normative matrix and the QR transformation of the related symmetric tridiagonal matrix is proved. We obtain a stable double LR algorithm for double LR transformation of normative matrices and give the error analysis of our algorithm. The operation number of the stable double LR algorithm for normative matrices is only four sevenths of the rational QR algorithm for reed symmetric tridiagonal matrices.     

矩孔金属光栅矢量模式理论的数值计算

根据矩孔金属光栅的矢量模式理论，计算了不同入射方向，波长及偏振态情况下衍射场的分布，研究了不同光栅结构对衍射效率，偏振态变化的影响；同时，根据实际需要，加工制作了一批不同深度的矩孔光栅样品，进行了实验测量，并将计算值与实验值进行了比较，两者基本相符。     

扰动周期KdV方程的小波基分析

本文利用样条小波基构造近似惯性流形来研究扰动周期ＫｄＶ方程的长期动力学行为·     

用13CNMR研究聚甲基丙烯酸锡酯的立构序列分布

本文测定了自由基型溶液聚合的聚甲基丙烯酸三甲基锡酯(PTMTM),聚甲基丙烯酸三乙基锡酯(PTETM)和聚甲基丙烯酸三丁基锡酯(PTBTM)的¹³C-NMR谱,对其C-2谱扩展分峰,计算立构序列,从定量数据表明,聚合物样品的空间立构富于或稍富于间规立构,随取代基的体积增大而趋于无规分布,作者认为受空间位阻效应和分子内或分子间形成配位键的影响。     

Preparing polymer brushes on polytetrafluoroethylene films by free radical polymerization

Films of polytetrafluoroethylene (PTFE) were exposed to sodium naphthalenide (Na/naphtha) etchant so as to defluorinate the surface for obtaining hydroxyl functionality. Surface-initiators were immobilized on the PTFE films by esterification of 4,4′-azobis(4-cyanopentanoic acid) (ACP) and the hydroxyl groups covalently linked to the surface. Grafting of polymer brushes on the PTFE films was carried out by the surface-initiated free radical polymerization. Homopolymers brushes of methyl methacrylate (MMA) were prepared by free radical polymerization from the azo-functionalized PTFE surface. The chemical composition and topography of the graft-functionalized PTFE surfaces were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance (ATR) FT-IR spectroscopy and atomic force microscopy (AFM). Water contact angles on PTFE films were reduced by surface grafting of MMA.     

Self-organized ZnAl2O4 nanostructures grown on -sapphire

Self-organized ZnAl₂O₄ nanostructures with the appearance (in SEM) of high aspect ratio horizontal nanowires are grown on uncatalysed c-sapphire by vapour phase transport. The nanostructures grow as three equivalent crystallographic variants on c-sapphire. Raman and cathodoluminescence spectroscopy confirm that the nanostructures are not ZnO and TEM shows that they are the cubic spinel, zinc aluminate, ZnAl₂O₄, formed by the reaction of Zn and O with the sapphire substrate.     

Exciton reflectivity of GaAs/Ga1−x Al x As multiple quantum wells

Summary The normal incidence reflectivity spectrum of excitons in GaAs/Ga_1−x Al _x As multiple quantum wells is calculated within the local response approximation. It is shown that the reflectivity lineshape strongly depends on the sample geometry. Using realistic parameters of a multiple quantum well structure, we obtain an excellent fit of the experimental reflectivity curve, thus giving exciton energies, oscillator strengths and exciton broadening parameters.

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Riassunto Lo spettro di riflettività ad incidenza normale degli eccitoni nei pozzi quantistici multipli di GaAs/Ga_1−x Al _x As è calcolato nell’ambito dell’approssimazione locale. Si mostra con la forma della linea di riflettività dipende in gran misura dalla forma geometrica del campione. Usando parametri realistici di una struttura a pozzi quantistici multipli, si ottiene un’ottima approssimazione della curva di riflettività sperimentale, che fornisce così energie eccitoniche, forze dell’oscillatore e parameri di ampliamento eccitonico.

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Резюме В рамках приближения линейного отклика вычисляется спекрт отражательной способности экситонов при нормальном падении для множественных квантовых ям в GaAs/Ga_1−x Al _x As. Показывается, что форма линии отражательной способности сильно зависит от геометрии образца. Используя реалистические параметры структуры множественных квантовых ям, мы получаем хорошее соответствие с экспериментальной кривой для отражательной способности. Получаются энергии экситонов, силы осцилляторов и парам⪟тры экситонного уширения.