1H NMR Reassignment for Z/E-Benzomalvins B and Absolute Configuration of Benzomalvin C

Chemistry of Natural Compounds - Benzomalvins B, C, and E (1, 2, and 3) were simultaneously obtained from the marine fungus Aspergillus sp. isolated from the soft coral Sinularia sp., collected...     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

可重复使用飞行器热走廊物理建模研究

对再入热走廊的物理含义进行了定义分析,为使防热层温度不超过热防护系统所允许使用的极限温度,可重复使用飞行器的飞行轨道必须在再入走廊热之内。建立了可重复使用飞行器再入热走廊的物理模型,给出该物理模型下热走廊的控制方程和求解方法。通过对航天飞机轨道器典型位置的再入热走廊与传统方法的验证分析,说明本文建立的可重复使用飞行器再入热走廊物理模型和求解方法是正确的,同时探讨了表面材料承受温度和发射系数对热走廊的影响规律。     

微分Haar-Gaussian小波变换在大景深物体边缘测量中的应用

提出了微分Haar_Gaussian小波变换算法并将其应用于边缘检测,在空域和频域中进行变换,并应用带宽匹配方法和远心测量光学系统,提高了运算速度,通过对实际大景深物体离焦像的边缘测量,得到了准确的结果。     

一种新型偶氮染料在扭曲向列相液晶显示取向中的应用

研究了一种新型偶氮材料sy03在光控取向中的应用。将sy03加入聚酰亚胺SE-3310(Nissan)与N,N-二甲基甲酰胺(DMF)的混合溶液中作为90°扭曲向列相液晶显示(Twisted nematic liquid crystal display,TN-LCD)的光取向材料,测量由它作为取向膜的扭曲向列型盒的电光特性与仅用SE-3310取向的扭曲向列型盒电光特性比较,发现sy03偶氮的加入使得扭曲向列型盒的响应时间短到98 ms、阈值电压也降低到1.7 V左右。而且随曝光时间的增加,响应时间和衬比度都有所提高,电光响应曲线也更为陡峭。加热到150℃后,其电光特性并没有明显变化,证明了它良好的热稳定性。最后通过测量偏振紫外吸收光谱,分析得出液晶分子易取向方向与激发光源偏振方向垂直。     

OCS分子在128 nm附近的光解动力学研究：S(3PJ=2,1,0)、S(1D2)以及S(1S0)产物通道

本文利用时间切片离子成像技术对OCS分子进行了真空紫外波段的光解动力学研究. 在四个光解光波长(从129.32到126.08 nm)下测量了硫原子解离产物S(³P_J=2,1,0)、S(¹D₂)、S(¹S₀)的速度影像,并从中清晰地发现了四个主要的解离产物通道：S(³P_J=2,1,0)+CO(X¹Σ⁺),S(³P_J=2,1,0)+CO(A³π),S(¹D₂)+CO(X¹Σ⁺)和S(¹S₀)+CO(X¹Σ⁺). 在实验影像中,产物CO分子的部分振动态结构能够得到分辨. 实验还获取解离产物总平动能谱,产物分支比和角分布. 对实验结果进行分析显示除绝热解离通道S(³P_J=2,1,0)+CO(A³π)之外,在其他三个产物通道中非绝热效应都起到非常重要的作用.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

原电池示意图教学中的电子转移标注策略

对于某些学生而言,高中化学中的“原电池”内容是一道难以逾越的鸿沟。这些困难,部分是由于教师在教学中一些策略不当,部分则是因为学生在日常生活中形成的相异概念的干扰。在原电池示意图中标注电子转移这一策略,能够有效地帮助学生更科学地理解原电池的本质。现代认知心理学对表象表征的研究为此策略的使用提供了理论支持。     

纺织品中pH值的测定能力验证

为了了解国内纺织品检测机构对纺织品中pH值测定领域的整体水平,识别和掌握实验室存在的差异,加强纺织品检测机构的实验室能力建设,中国国家认证认可监督管理委员会(CNCA)组织了纺织品中pH值的测定能力验证活动,有16个省、市、直辖市的69个实验室参加,测试结果满意的实验室占78.26%.     

Sonochemical Preparation of Micro- and Nanometer Cu2O

Cu2O particles with different morphologies and scales were prepared sonochemically on the solid-liquid interface of CuCl and water, by adjusting the reaction factors. The products were characterized by powder X-ray diffraction（XRD） and scanning electron microscopy（SEM）. The formation and morphology of Cu2O crystals were influenced by high-intensity ultrasound, reaction temperature, and addition of CuCl. The results indicate that micrometer Cu2O was crystallized in cubic and octahedral shapes, whereas, nanometer Cu2O was not produced in well-shaped crystals.