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101.
Controllable Goos–Hänchen shift of a light beam reflected from the colloidal ferrofluids is investigated by using the stationary-phase method. It is found that the Goos–Hänchen shift can be easily controlled by the local He factor and the volume factor. Using this scheme, the peak value, the peak position and the width of the Goos–Hänchen shift can all be controlled by adjusting the external magnetic field for a fixed configuration, which also provides a possibility for obtaining larger negative Goos–Hänchen shift by changing the external controlling field. Our results have potential applications in optical devices.  相似文献   
102.
The excitation energy transfer between a donor–acceptor pair with fixed distance apart through energy exchanging with environment is investigated. The total system is modeled as two two-level systems (TLSs) interacting with many harmonic oscillators. The pair behaves coherently or incoherently, depending on whether the dipolar coupling is stronger or weaker than the TLS–environment coupling. The environmental linear dispersion relation gives an analytical solution to the pair?s probability involving all the retardation times. We found that the long-time trapping of energy within the pair is caused by the inhibiting dark-state radiative decay when two TLSs are at half a resonant wavelength.  相似文献   
103.
In this letter, numerical simulation and experimental study of a radial-slab solid-state laser are presented. The laser includes four crossing-slabs pumped by four Xe flashlamps. The numerical simulation of coherent intensity in the near field and the far field indicates that the laser with the structure can improve the quality of output beam compared with incoherent beam combination. The radial-slab solid-state laser is fabricated, and initial experiments are carried out at a pulse repetition of 1 Hz. Nine beams in the near field and one combined beam in the far field are obtained in our initial experiment. The experimental results are consistent with the numerical analysis in the coherent condition. The results show that coherent beam combination is obtained by this laser.  相似文献   
104.
A simple “chimney” method was used to eliminate the voids in an arrangement of quantum dots sized 2 nm on a solid substrate, which resulted in a large well ordered superlattice of area in the order more than 1 μm2. Based on the principle of speeding up the interparticle interaction of nanoparticles to overcome the particle-substrate one, a lateral centripetal force originated from a glass tube acting as a chimney in a simple evaporation device is imposed. This method allows the packing process to be controlled in a mechanical force field, that is, with the same nanogold dispersion different patterns on a substrate—from separate dots to an ordered compact monolayer or even a multilayer structure—could be easily obtained.  相似文献   
105.
To protect carbon/carbon (C/C) composites from oxidation, a new type of oxidation protective coating has been produced by a two-step pack cementation technique. XRD and SEM analysis show, the coating obtained by the first step pack cementation was a porous β-SiC structure, and a new phase of CrSi2 was generated in the porous SiC coating after heat-treatment according to the second step pack cementation process. Oxidation test shows that, the weight loss of the SiC coated C/C is up to 11.26% after 5 h oxidation in air at 1773 K, and the weight loss of the CrSi2-SiC coated C/C composites is only 4.15% after oxidation in air at 1773 K for 34 h. The oxidation of C/C composites was primarily due to the reaction of C/C matrix and oxygen diffusing through the penetrable cracks in the coating.  相似文献   
106.
CrNx thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrNx films at temperatures in the range 20-170 °C. In this study CrNx thin films with CrN, Cr(N), Cr2N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr+2 emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrNx films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrNx film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 °C. This is lower than that of Cr(N), Cr2N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrNx films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness.  相似文献   
107.
本文系统研究了H、N、O、C、S等原子,N_2、NH_3、NO、CO等分子和CH_3、CH、CH_2和OH等自由基在Pt(100)表面的吸附.从能量上来看,吸附能力从小到大的顺序是N_2NH_3COCH_3NOHOHNCH2OSCHC.原子类吸附物中H、N、O的最稳定吸附位均为桥位,而S、C则倾向于四重空位.所研究的分子吸附物(N_2、NH3、CO、NO),N_2和NH_3有且只有一种顶位吸附结构,CO和NO均优先吸附在空位.自由基吸附物(CH、CH_2、CH_3、OH)在Pt(100)表面上的吸附,CH_3优先吸附在顶位,CH_2、OH它们的最稳定吸附位均为桥位.原子、分子和自由基吸附后,会引起Pt(100)原子层间距的改变.  相似文献   
108.
为了研究Co对单层MoS_2电子结构和磁性的影响,本文基于第一性原理,采用数值基组的方法计算了Co吸附式掺杂、Co替代式掺杂单层MoS_2的能带结构、态密度以及分析了其结构的稳定性.结果发现:Co替换式掺杂体系的形成能较低,实验上容易实现;Co在Mo位吸附的稳定性强于在S位吸附;Mo位吸附体系的总磁矩为0.999μB,其磁矩的主要来源于Co原子的吸附所贡献的0.984μB,Co原子的掺杂体系总磁矩为1.029μB,其磁矩的主要由Co原子替代掉一个Mo原子所贡献的磁矩为0.9444μB,相比于吸附体系,Co原子对磁矩的贡献率有所降低;无论是Co吸附在单层MoS_2表面还是Co直接替代掉Mo原子的掺杂体系,Co原子3d轨道的引入是引起单层MoS_2体系磁性的主要原因.  相似文献   
109.
The electrical properties of different metal-CdZnTe contacts by sputtering deposition method are investigated by current-voltage. The results show that Au is the most suitable electrical contact materials, which forms the nearly ideal Ohmic contact with high resistivity p-CdZnTe crystals. Ohmicity coefficient b is the closest to 1 after 10 min annealing at 333 K, which is analyzed by current-voltage characteristics. XPS analyses show that Au atoms diffuse into CdZnTe during annealing process and Cd and Te atoms diffuse into Au contact. Diffused Au atoms do not form any compound with any element in CdZnTe crystal. PL spectra results of Au deposition on CdZnTe crystals at 10 K show that the inter-diffused donors [Au]3+ recombine with acceptors [VCd]2− during sputtering process. Meanwhile, the intensity of (Dcomplex) peak of with Au contact increases sharply in comparison with un-deposited CdZnTe crystal and donor [Au]3+ and can compensate Cd vacancy [VCd]2− wholly.  相似文献   
110.
Cr1−xAlxC films were deposited on high-speed steel by RF reactive magnetron sputtering. In this study, we aimed to identify the effect of the Al content on the properties of Cr1−xAlxC films. We found that Cr1−xAlxC films exhibited a fine columnar grain microstructure with some special characteristics, such as high hardness of Hv 1426, a low friction coefficient of 0.29, and a large contact angle of 90° for x = 0.18. Furthermore, an increase in Al content resulted in a decrease in film hardness and an increase in contact angle. Moreover, on annealing at 923 K, the mechanical properties of the films improved and a dense protective film of complex Cr2O3 and Al2O3 oxides was formed on the surface for better wear resistance, which will ultimately increase the lifetime of the high-speed steel substrate.  相似文献   
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