基于环糊精的靶向药物传递系统

癌症等恶性增殖疾病的靶向治疗有赖于靶向药物传递系统（targeted drug delivery system,TDDS）的开发。环糊精具有低毒、易修饰等优良性质,并可通过与药物分子形成包合物而提高药物的溶解性、稳定性、安全性和生物利用度等,因而具有成为优秀药物载体的潜力。环糊精不仅可以以其本身或修饰环糊精的形式充当载体,还可通过聚轮烷、阳离子聚合物或纳米粒等形式构建有效的药物载体。肿瘤或人体某些病变部位的细胞表面存在过度表达的生物受体如叶酸受体、去唾液酸糖蛋白受体、透明质酸受体、转铁蛋白受体和整合素受体等,可以与其相应的配体产生特异性识别。用适当的化学方法将配体分子如叶酸、单糖或寡糖、透明质酸、转铁蛋白及RGD肽等键接在基于环糊精的载体上,可形成具有靶向性质的药物载体,进而与药物分子一起构筑靶向药物传递系统。这种药物传递系统不仅针对于化学治疗药物,在核酸传递中也得到了丰富的应用。本文综述了基于环糊精的靶向药物传递系统的靶向机理及最新研究进展,并对其发展前景作了展望。     

Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

This paper reports that the(Ga,Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition.Room-temperature ferromagnetism is observed for the as-grown thin films.The x-ray absorption fine structure characterization reveals that Co 2+ and Ga 3+ ions substitute for Zn 2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin.The ferromagnetic(Ga,Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature.The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.     

Stability of trapped Bose-Einstein condensates in one-dimensional tilted optical lattice potential

Using the direct perturbation technique,this paper obtains a general perturbed solution of the Bose-Einstein condensates trapped in one-dimensional tilted optical lattice potential. We also gave out two necessary and sufficient conditions for boundedness of the perturbed solution. Theoretical analytical results and the corresponding numerical results show that the perturbed solution of the Bose-Einstein condensate system is unbounded in general and indicate that the Bose-Einstein condensates are Lyapunov-unstable. However,when the conditions for boundedness of the perturbed solution are satisfied,then the Bose-Einstein condensates are Lyapunov-stable.     

Temperature Effect on Hydrogen Evolution Reaction at Au Electrode

The temperature dependence of hydrogen evolution reaction (HER) at a quasi-single crys-talline gold electrode in both 0.1 mol/L HClO₄ and 0.1 mol/L KOH solutions was investigated by cyclic voltammetry. HER current displays a clear increase with reaction overpotential (η) and temperature from 278～333 K. In 0.1 mol/L HClO₄ the Tafel slopes are found to increases slightly with temperature from 118 mV/dec to 146 mV/dec, while in 0.1 mol/L KOH it is ca. 153±15 mV/dec without clear temperature-dependent trend. The apparent activation energy (Ea) for HER at equilibrium potential is ca. 48 and 34 kJ/mol in 0.1 mol/L HClO₄ and 0.1 mol/L KOH, respectively. In acid solution, Ea decreases with increase in η, from Ea=37 kJ/mol (η=0.2 V) to 30 kJ/mol (η=0.35 V). In contrast, in 0.1 mol/L KOH, Ea does not show obvious change with η. The pre-exponential factor (A) in 0.1 mol/L HClO₄ is ca. 1 order higher than that in 0.1 mol/L KOH. Toward more negative potential, in 0.1 mol/L HClO₄ A changes little with potential, while in 0.1 mol/L KOH it displays a monotonic increase with η. The change trends of the potential-dependent kinetic parameters for HER at Au electrode in 0.1 mol/L HClO₄ and that in 0.1 mol/L KOH are discussed.     

Finite-time synchronization of switched stochastic R?ssler systems

This paper presents the finite-time synchronization between switched stochastic R?ssler systems accompanied by a time-driven switching law. Based on the Ito formula and Lyapunov stability theory, the finite-time synchronization of switched stochastic master-slave R?ssler systems and the finite-time stability for the mean of error states are developed with the proposed feedback controller. Numerical simulations demonstrate the effectiveness of the proposed methods.     

High Accuracy Split-Step Finite Difference Method for Schrödinger-KdV Equations

In this article, two split-step finite difference methods for Schrödinger-KdV equations are formulated and investigated. The main features of our methods are based on:(i) The applications of split-step technique for Schrödingerlike equation in time. (ii) The utilizations of high-order finite difference method for KdV-like equation in spatial discretization. (iii) Our methods are of spectral-like accuracy in space and can be realized by fast Fourier transform efficiently. Numerical experiments are conducted to illustrate the efficiency and accuracy of our numerical methods.     

Micro-scale Fabry–Perot interferometer with high spectral resolution and tunable transmission frequency via chiral waveguide-emitter coupling

A micro-scale Fabry–Perot interferometer with high spectral resolution and tunable transmission frequency is proposed. In this scheme, two partially reflecting mirrors with a separation of several wavelengths is fabricated in a waveguide, and a two-level emitter is located between the mirrors and coupled to the waveguide with chiral interaction. We analytically show that the single emitter plays the role of a strongly dispersive medium and the full width at half maximum (FWHM) of the transmission fringes around the resonance frequency of the emitter can be narrowed by 5 orders of magnitude. The proposed micro-scale interferometer can have the same spectral resolution as meter-scale traditional interferometers. We also show that the central frequency of the narrowed transmission fringe can be tuned by adjusting the asymmetry of the emitter-waveguide coupling. Our scheme has potential applications in the fields of integrated optical circuit and quantum information processing.     

激光诱导熔石英表面损伤修复中的气泡形成和控制研究

基于熔石英材料在CO_2激光作用下的温度分布和结构参数变化的计算结果,对熔石英损伤修复中的气泡形成和控制进行了研究.针对损伤尺寸介于150—250μm之间的损伤点,提出了一种能够有效控制气泡形成的长时间低温预热修复方法.基于低温下熔石英材料结构弛豫时间常数较长的特点,该方法在不引起熔石英材料结构发生显著变化的同时,能够解吸附表面和裂纹处所附着的气体和杂质,可有效降低裂纹闭合过程中气泡形成的概率.实验结果表明,长时间低温预热修复方法的成功修复概率可达到98%.     

铟镓锌氧薄膜晶体管的悬浮栅效应研究

为了避免光照对铟镓锌氧薄膜晶体管(InGaZnO thin film transistors,IGZO TFTs)电学特性的影响,IGZO TFT要增加遮光金属层.本文研究了遮光金属栅极悬浮时,IGZO TFT的输出特性.采用器件数值计算工具TCAD(technology computer-aided design)分析了IGZO层与栅介质层界面处电势分布,证实了悬浮栅(floating gate,FG)IGZO TFT输出曲线的不饱和现象是由悬浮栅与TFT漏端的电容耦合造成.基于等效电容的电压分配方法,提出了悬浮栅IGZO TFT电流的一阶模型.TCAD数值分析及一阶物理模型结果与测试具有较高程度的符合,较完整地解释了悬浮栅IGZO TFT的电学特性.     

Exposure assessment of process by-product nanoparticles released during the preventive maintenance of semiconductor fabrication facilities

This study characterized the process by-product particles (mostly nanoparticles) released during the preventive maintenance of semiconductor fabrication facilities, such as chemical mechanical planarization (CMP), plasma-enhanced chemical vapor deposition (PECVD), and ion implantation. Manual sampling and real-time measurements with direct reading instruments were conducted to assess the exposure levels of nanoparticles and their physical and chemical properties. Significant amount of nanoparticles were observed in the breathing zone of the workers during the maintenance of the PECVD and ion implanters with the peak number concentrations as high as 6,470,000 and 65,444 #/cm³, respectively, indicating that the deposited residual chemicals in the reaction chambers were released as airborne nanoparticles by the maintenance activities. In contrast, nanoparticles released during the maintenance of the local scrubber, CMP, and replacing CMP slurry drums were insignificant. Causes of the particle release were discussed and suggestions were made to mitigate the nanoparticle release and reduce the exposure levels.