InGaZnO薄膜晶体管泄漏电流模型

研究了非晶氧化锌镓铟薄膜晶体管(amorphous InGaZnO thin-film transistor,InGaZnO TFT)的泄漏电流模型.基于Poole-Frenkel热发射效应和热离子场致发射效应的泄漏电流产生机制,分别得到了高电场和低电场条件下的载流子产生-复合率.在此基础上推导得到了InGaZnO TFT的分段式泄漏电流-电压数学模型,并利用平滑函数得到了关断区和亚阈区连续统一的泄漏电流模型.所提出的泄漏电流模型的计算值和TCAD模拟值与实验结果较为吻合.利用所提出的InGaZnO TFT泄漏电流模型和TCAD模拟,讨论了InGaZnO TFT不同的沟道宽度、沟道长度和栅介质层厚度对泄漏电流值的影响.研究结果对InGaZnO TFT集成传感电路的设计具有一定参考价值.     

Synthesis and Raman analysis of 1D-ZnO nanostructure via vapor phase growth

1D-nanostructural zinc oxide (ZnO) with different shapes have been synthesized on p-type Si(1 0 0) and glass substrates via vapor phase growth by heating pure zinc powder at temperatures between 480 and 570 °C. The different ZnO nanostructures depend on the substrates and the growth temperatures. Scanning electron microscopy and X-ray diffraction revealed that a well-aligned nanowires array, which are vertical to the substrate of Si(1 0 0) with 18 sides on their heads, but six sides on their stems, has been formed at 480 °C. Raman study on the ZnO nanostructures shows that the coupling strength between electron and phonon determined by the ratio of the second- to the first-order Raman scattering cross-sections declines with decreasing diameter of the nanowires. However, a little changes of the coupling strength in terms of the width of the nanobelts have been observed.     

Cholera model incorporating media coverage with multiple delays

In order to investigate the impact of awareness programs and time delays on the cholera outbreaks, we propose a cholera epidemic model, incorporating awareness programs by media as a separate class and two time‐delay factors. The bifurcation theory is applied to explore the variety of dynamics of this model for various combinations of the delays when R₀>1. Moreover, we analyze the direction, stability, and period of the bifurcating periodic solutions arising through Hopf bifurcation by using the normal form concept and the center manifold theory. Finally, we present numerical simulations to verify the main theoretical results.     

Multiple positive solutions for Schrödinger‐Poisson system involving singularity and critical exponent

In this paper, the existence and multiplicity of positive solutions is established for Schrödinger‐Poisson system of the form where 0 ∈ Ω is a smooth bounded domain in , , and λ > 0 is a real parameter. Combining with the variational method and Nehari manifold method, two positive solutions of the system are obtained.     

Strain effects on optical properties of pyramidal InAs/GaAs quantum dots

Strain distribution and optical properties in a self-assembled pyramidal InAs/GaAs quantum dot grown by epitaxy are investigated. A model, based on the theory of linear elasticity, is developed to analyze three-dimensional induced strain field. In the model, the capping material in the heterostructure is omitted during the strain analysis to take into account the sequence of the fabrication process. The mismatch of lattice constants is the driving source of the induced strain and is treated as initial strain in the analysis. Once the strain analysis is completed, the capping material is added back to the heterostructure for electronic band calculation. The strain-induced potential is incorporated into the three-dimensional steady-state Schrödinger equation with the aid of Pikus–Bir Hamiltonian with modified Luttinger–Kohn formalism for the electronic band structure calculation. The strain field, the energy levels and wave functions are found numerically by using of a finite element package FEMLAB. The energy levels as well as the wave functions of both conduction and valence bands of quantum dot are calculated. Finally, the transition energy of ground state is also computed. Numerical results reveal that not only the strain field but also all other optical properties from current model show significant difference from the counterparts of the conventional model.     

Critical point approaches to Gradient-Type systems on the Sierpi\'{n}ski Gasket

We investigate the existence of multiple solutions for parametric quasi-linear systems of the gradient-type on the Sierpi\''{n}ski gasket. We give some new criteria to guarantee that the systems have at least three weak solutions by using a variational method and some critical points theorems due to Ricceri. We extend and improve some recent results. Finally, we give two examples to illustrate the main results.     

掺铒的纳米相氟氧化物玻璃陶瓷的多光子红外量子剪裁

研究了掺铒的纳米相氟氧化物玻璃陶瓷(Er(3):FOV)的红外量子剪裁现象,测量了红外和可见的Er(3):FOV的荧光光谱.结果发现光激发²H_11/2能级的⁴ I_13/2→⁴I_15/2荧光跃迁的近似量子剪裁效率已达约186.28%.计算了有关的无辐射弛豫速率、自发辐射速率和能量传递速率,分析了有关的能量传递动力学过程,发现     

低工作电压聚噻吩薄膜晶体管

以高掺杂Si单晶片作为衬底且充当栅电极,采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层,聚三己基噻吩(P3HT)薄膜作为半导体活性层,金属Au作为源、漏电极,并采用十八烷基三氯硅烷(OTS)对栅介质层表面修饰,在空气环境下成功地制备出聚合物薄膜晶体管(PTFT).PTFT器件测试结果表明,该晶体管在低的驱动电压(<-1 V)下仍呈现出良好的饱和行为,其阈值电压和有效场效应迁移率分别为0.4 V和2.2×10^-2 cm²/V ·s.通过对金属-聚合物-氧化物 关键词： 聚合物薄膜晶体管 聚三己基噻吩 场效应迁移率 k栅介质')" href="#">高k栅介质     

点接触金属/Pr0.7Ca0.3MnO3/Pt结构稳定的低电流电阻开关特性

利用自主开发的导电原子力显微镜控制Pt,W探针构成点接触金属/Pr0.7Ca0.3MnO3(PCMO)/Pt三明治结构,对其电流-电压(I-V)及脉冲诱导电阻开关(EPIR)特性进行了研究.研究发现,在10 nA限流下两种电极对应结构的I-V都表现出相当稳定的双极性电阻开关特性,以及大于100的电阻开关比.进一步测试发现,点接触W/PCMO/Pt器件具有在10 nA限流下稳定的EPIR特性以及100 pA限流下重复的双极性电阻开关特性.此电流比已报道的电流低3个数量级,表明此结构在低功耗存储器件方面的潜在应用.通过对比样品不同位置、不同限流、不同接触面积点接触Pt/PCMO/Pt的I-V回滞特性,把点接触器件在低电流下稳定、显著的电阻开关效应归结于小的器件面积导致强的局域电场加强了O离子迁移效应.     

Entropy squeezing of an atom with a k-photon in the Jaynes--Cummings model

The entropy squeezing of an atom with a k-photon in the Jaynes-Cummings model is investigated. For comparison, we also study the corresponding variance squeezing and atomic inversion. Analytical results show that entropy squeezing is preferable to variance squeezing for zero atomic inversion. Moreover, for initial conditions of the system the relation between squeezing and photon transition number is also discussed. This provides a theoretical approach to finding out the optimal entropy squeezing.