ZnO/A1lN/Si(111)薄膜的外延生长和性能研究

用常压金属化学气相沉积法(MOCVD)在Si(111)衬底上制备了马赛克结构ZnO单晶薄膜.引入低温AlN缓冲层以阻止衬底氧化、缓解热失配和晶格失配.薄膜双晶X射线衍射2θ/ω联动扫描只出现了Si(111)、ZnO(000l)及AlN(000l)的衍射峰.ZnO/AlN/Si(111)薄膜C方向晶格常量为0.5195 nm,表明在面方向处于张应力状态;其对称(0002)面和斜对称(1012)面的双晶X射线衍ω摇摆曲线半峰全宽分别为460"和1105";干涉显微镜观察其表面有微裂纹,裂纹密度为20 cm-1;3 μm×3μm范围的原子力显微镜均方根粗糙度为1.5 nm激光实时监测曲线表明薄膜为准二维生长,生长速率4.3μm/h.低温10 K光致发光光谱观察到了薄膜的自由激子、束缚激子发射及它们的声子伴线.所有结果表明,采用金属化学气相沉积法并引入AlN为缓冲层能有效提高Si(111)衬底上ZnO薄膜的质量.     

5 TW/40 fs级台式钛宝石激光系统研究

在TSA-25系统输出35 mJ,800 nm啁啾脉冲的基础上,建立了以钛宝石作为增益介质的二级啁啾脉冲放大(CPA)系统。使用0.6 J和1.6 J,532 nm,10 Hz Nd∶YAG激光抽运,输出脉冲能量达到500 mJ,经压缩脉冲宽度为41 fs,压缩器的能量转换效率为63%,峰值功率可达7.6 TW。通过对放大器系统的钛宝石晶体、抽运密度以及多通结构通道数的选择等实验,有效地提高了能量放大器的萃取效率。其主放大器能量萃取效率达到32%,整个系统占用尺寸不到10 m2。     

The electron transport characters in a nanostructure with the periodic magnetic-electric barriers

This paper detailedly studies the transmission probability, the spin polarization and the conductance of the ballistic electron in a nanostructure with the periodic magnetic-electric barriers. These observable quantities are found to be strongly dependent not only on the magnetic configuration, the incident electron energy and the incident wave vector, but also on the number of the periodic magnetic-electric barriers. The transmission coefficient and the spin polarization show a periodic pattern with the increase of the separation between two adjacent magnetic fields, and the resonance splitting increases as the number of periods increases. Surprisingly, it is found that a polarization can be achieved by spin-dependent resonant tunnelling in this structure, although the average magnetic field of the structure is zero.     

二步法大景深反射全息图

以开拓反射全息图的景深表达能力为目的,从反射全息图的共轭物像关系出发,利用反射全息图的均匀介质耦合波理论和布拉格条件,对其白光再现像模糊作了具体的分析和讨论,得到色模糊和线模糊的表达式.指出反射全息图上不同各点对任意白光再现像点的色模糊和线迷糊的影响均存在差异,给出反射全息图白光再现像的景深表达式.实验利用二步法制作了一张景深为83 cm的反射全息图,与大景深彩虹全息图再现像相比,其再现像的立体感更加强烈.理论分析和实验结果表明,光源的再现角度和观察距离对反射全息图的再现像景深大小影响显著.在再现光垂直于反射全息图平面照明情况下,反射全息图具有最好的景深表达能力.     

Mechanisms of the pancake vortex and vortex line movement in the high Tc superconductors Bi2Sr2CaCu2O8+δand La1.93Sr0.07CuO4+δ

In the strict sense, it is not very clear why with magnetic field increasing, the normal-superconductive (NS) transition becomes broad for Bi2Sr2CaCu2O8+δ(Bi2212) while the NS transitions are almost parallel for La1.93Sr0.07CuO4+δ(La214). In this paper, R-T relations are measured by the six-probe method. We propose a moving mechanism of the pancake vortex and vortex line for Bi2212. The theoretical curves fit the experiment data well.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

低聚壳聚糖几何结构和物理化学属性的理论研究

运用密度泛函B3LYP/6-31G+(d)方法对gg构象的低聚壳聚糖进行了结构优化、频率计算和电子结构,并用更高精度的WB97XD/6-311+G(d,p)方法计算了平均结合能及零点能校正,分析了热力学性质.结果表明,由于低聚壳聚糖中的氢键作用,使其形成螺旋结构;聚合度的增加,使平均结合能随之下降,结构的稳定性增强;在降解过程中,均为放热反应,验证了利用降温来提高降解产率的实验的可行性;此外,聚合度的增加,使能隙减小且快速收敛于聚合度为7的6.99 eV,稳定的反应活性与实验相符;HOMO、LUMO的电子密度分布表明,化学活性集中在C2位的氨基、C6位的羟基以及链的两端位置.该结果对低聚壳聚糖模型的建立和低聚壳聚糖降解过程、活性位置以及物理化学属性的尺寸依赖等现象的研究有着指导意义.     

基于超临界流体技术制备葡萄糖脂质体的实验研究

脂质体由于其特殊的结构和性能,是一种很有发展潜力的药物载体,在医药和化妆品等行业具有广阔的应用前景。超临界逆向蒸发法是用超临界流体代替有机溶剂制备脂质体的方法,具有对水溶性药物脂质体制备过程简单、包覆率高等特点。以葡萄糖为模型药物,利用该方法制备出了葡萄糖脂质体,并详细考察了不同工艺条件对脂质体粒径和包覆率的影响。结果表明:用超临界逆向蒸发法可成功地制备出最小粒径为290nm、包覆率最高可达41.3%的葡萄糖脂质体。压力、温度和平衡时间对粒径和包覆率都有较大的影响。压力在10~30MPa时,随压力的增加,脂质体粒径显著减小至某一值后,基本趋于稳定,而包覆率逐渐增加,达到25.7%~27.5%,随后包覆率逐渐减小;温度在35~65℃时,随温度的增加粒径显著减小至最小值,然后逐渐增大,而包覆率一直增大,最高可达41.3%;平衡时间在15~45min时,随平衡时间的增加,粒径相对稳定,而包覆率显著增加,超过45min之后,粒径显著增加,包覆率显著下降。     

改进的TESLA式高阶模衰减器的实验研究

讨论了TESLA型高阶模耦合器的改进, 对所设计的改进型TESLA式高阶模耦合器进行实验, 对理论计算与实验结果进行详细分析, 结果表明改进的高阶模耦合器理论计算和实验结果符合得较好.     

3D photon counting imaging at 1550 nm with 1.5-GHz sine-wave-gated InGaAs/InP GAPD

We demonstrated a 3D laser imaging system at 1550 nm with a 1.5-GHz sine-wave gated Geiger-mode InGaAs/InP avalanche photodiode (APD). An optical fiber bundle with 100 individual fiber outputs was implemented at the focal plane of the telescope, providing a 2.5-mrad imaging view. The system used single-pixel near-infrared single-photon detector to measure photons at fiber outputs instead of a photon counting array. The 1.5-GHz gated Geiger-mode InGaAs/InP APD with a timing jitter of 290 ps was operated in quasi-continuous mode with detection efficiency of ∼4.3%. We achieved higher than 6-cm surface-to-surface resolution at single-photon level, showing a potential of low-energy and eye-safe laser imaging system for long-distance measurements.