c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

Semi-infinite homology and 2D gravity. I

In [33], we studied the constraint problem for two-dimensional quantum gravity in the conformal gauge. In this gauge, we proposed an ansatz for the gravitational sector. Using this ansatz, we established a striking connection between the matrix models and continuum 2D gravity. We also announced several results on semi-infinite homology of the Virasoro algebra with coefficients in a suitable class of positive energy modules. In this article, we will provide details of the proof of the announced results.Supported in part by the Alfred P. Sloan FoundationSupported by NSF Grant DMS-8703581     

一维应变压缩下TC4钛合金绝热剪切研究

 利用内径为57 mm的压缩气炮，在撞击速度为0.2~1.2 km/s（相应的靶中压力为3~15 GPa）范围内进行对称碰撞实验，以研究TC4（Ti-Al6-V4）钛合金在一维应变冲击压缩条件下的绝热剪切现象。对回收得到的受冲击样品，在扫描电镜（SEM）下进行细观金相分析。结果指出，一维应变冲击压缩条件下，TC4钛合金中绝热剪切带产生的对称碰撞速度阈值为500 m/s（相当于样品中的压力为5.87 GPa）；主剪切带与冲击方向约为45°角，带上有圆形和椭圆形两种孔洞且随碰撞速度的增大而增多和长大，这是典型的韧性损伤特征。随碰撞速度增大，产生与主剪切带成15°角的支剪切带。这些与理论预言相符。X射线能谱分析结果指出，剪切带内材料发生了(α+β)→β相的转变，是典型的相变带。剪切带的温度估算与实验提供的信息吻合。     

Bis[μ‐1‐(1,10‐phenanthrolin‐2‐yl)‐2‐pyridone]bis{aqua[1‐(1,10‐phenanthrolin‐2‐yl)‐2‐pyridone]cadmium(II)} tetrakis(perchlorate)

In the title centrosymmetric binuclear complex, [Cd₂(C₁₇H₁₁N₃O)₄(H₂O)₂](ClO₄)₄, the Cd^II ion assumes a distorted octahedral geometry. There are π–π stacking interactions between the pyridine and 1,10‐phenanthroline ring systems of adjacent ligands at the same Cd^II centre. Intermolecular hydrogen bonds between the coordinated aqua ligand and the O atom of a keto group connect adjacent complex cations into extended chains. Hydrogen bonds also exist between the complex cations and the perchlorate anions. Compared with the fluorescence spectrum of the organic ligand, the complex displays strong fluorescent emission and an ipsochromic shift of the emission peaks, which may be attributed to the structural character.     

Investigation on ultrafast thrid—order optical nonlinearity of metal（dmit）2／mnt）2 Charge transfer complexes

We have investigated the transient third-order optical nonlinearity of the solutions of Metal(dmit)2/(mnt)2 salts in acetone by employing femtosecond optical Kerr gate measurement at 830nm wavelength.An order of enhancement on the second-order hyperppolarizability is found for the above salts with central atoms of Cu and Ni.We have suggested an explanation for the enhancement based on the extension of electronic conjugation by the entring Cu or Ni atom.     

Thickness decrease of a grafted polyelectrolyte membrane exposed to shear flow

The effect of the shear flow on the thickness change of a polyelectrolyte membrane grafted onto a glass substrate was directly investigated with a flow cell combined with a confocal laser scanning microscope. The membrane thickness decreased proportionally to an increase in the shear stress of the flow when the shear rate exceeded a critical value of 1 s^?1. The higher the ionic strength was of the fluid, the greater the thinning effect was. The correlation between the critical shear rate and the relaxation of the polymer in the gel membrane was examined. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2808–2815, 2003     

KF-Al2O3催化合成2-甲基-1-苄基苯并咪唑

苯并咪唑类杂环化合物具有杀菌、消炎、抗癌、抗氧化的活性,广泛用于食品的防虫和防腐,用于动、植物病毒的防治,人体疾病和肿瘤的防治[1-3],本文用KF Al2O3作催化剂,用DMF为溶剂,利用2 甲基苯并咪唑与苄基溴反应合成2 甲基 1 苄基苯并咪唑的新型方法,考察了诸因素对产率的影响,找出了最佳的反应条件。合成路线如下:1　实验部分1 1　仪器与试剂Brurer AM 500超导核磁共振波谱仪(溶剂CDCl3);CarloErbal1106型元素分析仪,NicoletIm pact410型红外光谱仪,KBr压片,HP1100型和Finnigan FTMS 2000型质谱仪(以上均由华东理工大学分析…     

软x射线近贴显微技术

软x射线近贴显微技术不但可使活的生物样品成象,分辨率高于光学显微镜,而且人为的样品准备程序在该技术中都可避免。本文描述了用高功率激光打靶产生的等离子体作为软x射线源而进行的近贴显微研究,并得到了分辨率好于1μm的结果。     

Miniature InGaAsP/InP phase modulator for integrated opto-electronics

Miniature, etching ridge InGaAsP/InP Phase Modulator with highly efficient phase shifting efficiency of 60°/V.mm and 43°/V.mm for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.52 μm are reported. It is well suited for integrated opto-electronics. Some functions depending on bandwidth of the devices are discussed.