Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

A benchmark-learning roadmap for regional sustainable development in China

Journal of the Operational Research Society - Serious environmental problems have accompanied China's remarkable economic growth for decades, which also have direct and indirect impacts on its...     

Compact, reliable asymmetric optical configuration for cost-effective fabrication of multiplex dot matrix hologram in anti-counterfeiting applications

This study presents a compact optical configuration that can generate a multiplex dot-matrix hologram with complex interlaced images for anti-counterfeiting applications on valuable paper. Varying the orientation of the interference plane can enable the multiplex hologram to be recorded without changing the interference angle of two laser beams. With its simple asymmetric optical setup, a multiplex hologram with many interlaced images can be efficiently fabricated, increasing the cost of imitation. Experimental details of the asymmetric optical setup are also described.     

Extremal Convex Planar Sets

Each convex planar set K has a perimeter C, a minimum width E, an area A, and a diameter D. The set of points (E,C, A^1/2, D) corresponding to all such sets is shown to occupy a cone in the non-negative orthant of R⁴with its vertex at the origin. Its three-dimensional cross section S in the plane D = 1 is investigated. S lies in a rectangular parallelepiped in R³. Results of Lebesgue, Kubota, Fukasawa, Sholander, and Hemmi are used to determine some of the boundary surfaces of S, and new results are given for the other boundary surfaces. From knowledge of S, all inequalities among E, C ,A, and D can be found.     

Decay distribution of spontaneous emission from atoms in one-dimensional photonic crystal

Spontaneous emission behavior from atoms (or molecules) in one-dimensional photonic crystal with a defect is investigated. Taken all the TE and TM modes into account, the normalized spontaneous emission rate of the atom is calculated as a function of the position of the atom in the crystal. Results for both nonabsorbing dielectric structure and absorbing dielectric structure are presented. With the increase of the thickness of the defect in which the atoms are embedded, the oscillations of the spontaneous emission rate versus the position of the atom become dense and the lifetime distribution becomes narrow and sharp. The PC effect may lead to the coexistence of both accelerated and inhibited decay processes.     

Enhancement of the Kerr effect for a quantum dot in a cavity

Nonlinear susceptibility of a quantum dot (QD) embedded in a two-sided cavity, is studied theoretically from a weak-coupling to a strong-coupling regime. In the relevance of a quantum logic gate, the corresponding nonlinear phase shifts (Kerr effect) are estimated for coherent wavepackets including one photon on average. In the weak-coupling regime, the phase shift enhances strongly as a function of a coupling constant between the cavity photon and QD, and eventually saturates in the strong-coupling regime. We also show transmission spectra to evaluate the efficiency of the phase shift. Although the efficiency decreases monotonically in the weak-coupling regime, it rises in the strong-coupling regime.     

Analytical study of a flattened Gaussian beam through multi-apertured optical imaging systems of B = 0

By using the methods of the matrix decomposition and expansion of the hard-edged aperture function into a finite sum of complex Gaussian functions, the recurrence propagation expressions for a flattened Gaussian beam (FGB) through multi-apertured optical imaging systems of B = 0 are derived and illustrated with numerical examples. Comparisons with the straightforward numerical integration of the Collins formula and with the previous work are made. It is shown that the main advantages of our methods and results are the more accuracy and great reduction of computer time.     

The Novel Y-Branch With Two Reflectors

A novel Y-branch waveguide with two reflectors is proposed. The normalized transmitted power for the branching angle of 50°is greater than 70%, which is higher than conventional Y-branch with such wide angle.