Measuring Grüneisen Parameter of Lead by High Pressure-Jump Method

Using the technology of pressure jump, variations of temperature associated with pressure from 2.4 GPa to 4.6 GPa are measured for lead. The Grfuneisen parameter is calculated from the thermodynamic relation γ =（Ks/T）（aT/aP）s, in which substitution of △T/△P for aT/aP at median pressure is strictly justified. The correction of temperature change is carried out by analysing the experimental data, which makes the process more approaching to an adiabatic condition. The calculated values of △T/ △ P and γ gradually decrease with the increasing pressure. The decrease trend is consistent with the previous work. The γ values in the range of 2-3 GPa are averagely higher than the results of Ramakrishnan et al., indicating the effect of temperature correction. The improved method is promising for measurements of Grfineisen parameter to higher pressure range.     

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.     

Thermal Performance of Laser Diode Array under Constant Convective Heat Transfer Boundary Condition

Three-dimensional heat transfer model of laser diode array under constant convective heat transfer coefficient boundary condition is established and analytical temperature profiles within its heat sink are obtained by separation of variables. The influences on thermal resistance and maximum temperature variation among emitters from heat sink structure parameters and convective heat transfer coefficient are brought forward. The derived formula enables the thermal optimization of laser diode array.     

Propagation and interaction of ion-acoustic solitary waves in a quantum electron-positron-ion plasma

This paper discusses the existence of ion-acoustic solitary waves and their interaction in a dense quantum electron-positron-ion plasma by using the quantum hydrodynamic equations.The extended Poincar’e-Lighthill-Kuo perturbation method is used to derive the Korteweg-de Vries equations for quantum ion-acoustic solitary waves in this plasma.The effects of the ratio of positrons to ions unperturbation number density p and the quantum diffraction parameter H e (H p) on the newly formed wave during interaction,and the phase shift of the colliding solitary waves are studied.It is found that the interaction between two solitary waves fits linear superposition principle and these plasma parameters have significantly influence on the newly formed wave and phase shift of the colliding solitary waves.The investigations should be useful for understanding the propagation and interaction of ion-acoustic solitary waves in dense astrophysical plasmas (such as white dwarfs) as well as in intense laser-solid matter interaction experiments.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

应用级联倍频方法提高倍频系统输出稳定性研究

提出应用级联倍频方法提高倍频系统输出稳定性,并就该方法的有效性进行了理论分析和模拟计算.分析和计算结果不但证明级联倍频方法能实现倍频系统稳定输出,而且还表明可以通过仔细调节第一块倍频晶体中波矢方向 k 与光轴间夹角、两块倍频晶体间的间隔,能调节改变实现倍频系统最稳输出时所需第二块晶体的理论计算长度,使之与第二块倍频晶体的实际加工长度一致,最终实现系统稳定倍频输出.级联倍频方法在实现高输出稳定性的同时能实现高的倍频转换效率,对应用于光参量啁啾脉冲放大系统的高稳定抽运源系统的设计建造具有重要参考意义. 关键词： 级联倍频 稳定倍频输出 光参量啁啾脉冲放大     

基于蒙特卡罗方法的中国中长期煤炭需求预测

为避免传统预测方法的参数取值主观性问题,采用参数随机产生的蒙特卡罗方法预测中国中长期煤炭需求。首先分析了经济增长、能源结构和产业结构三个主要煤炭需求影响因素,并基于1980~2015年间各影响因素及煤炭消费的历史数据和最小二乘法的多元线性回归拟合煤炭需求方程。在此基础上,构建各影响因素的概率分布,采用蒙特卡罗方法模拟1981~2015年的煤炭需求,发现仿真结果可以较好拟合现实,可作为仿真预测的有效工具。结合经济新常态和能源结构调整的现状,控制参数取值范围进行蒙特卡罗仿真预测,结果显示,2016~2025年的煤炭需求呈先上升后下降趋势,并于2020年达到需求的峰值40.25亿吨,这些结果对于煤炭产业的科学决策有重要的作用。     

C60和C60／C70的激光脱附飞行时间质谱分析

采用激光脱附并直接测量离子的方法对实验室提取的C_(60)/C_(70)以及进一步分离得到的纯C_(60)进行了飞行时间质谱分析,并讨论了质谱分析过程中实验条件对结果的影响.