Representation of Cubic Lattices by Symmetric Implication Algebras

In this paper a cubic lattice L(S) is endowed with a symmetric implication structure and it is proved that L(S) \ {0} is a power of the three-element simple symmetric implication algebra. The Metropolis–Rota’s symmetries are obtained as partial terms in the language of symmetric implication algebras.     

Electron-confined LO-phonon scattering in GaAs-Al0.45Ga0.55As superlattice

We develop a theoretical model to the scattering time due to the electron-confined LO-phonon in GaAs-Al_xGa_1-xAs superlattice taking into account the sub-band parabolicity. Using the new analytic wave function of electron miniband conduction of superlattice and a reformulation slab model for the confined LO-phonon modes, an expression for the electron-confined LO-phonon scattering time is obtained. In solving numerically a partial differential equation for the phonon generation rate, our results show that forx = 0.45, the LO-phonon in superlattice changes from a bulk-like propagating mode to a confined mode. The dispersion of the relaxation time due to the emission of confined LO-phonons depends strongly on the total energy.     

Cathodoluminescence study of extended defects in hydrothermal ZnO crystals

Understanding the luminescence of ZnO is very important for some applications. In spite of the many studies carried out, there are still some points concerning the origin of some of the luminescence emissions in ZnO crystals that require additional study; in particular, the role of extended defects remains to be a matter of controversy. We present here a cathodoluminescence analysis of the defects generated by Vickers indentation in hydrothermal HTT crystals. Special emphasis was paid to the luminescence band peaking around 3.3 eV. The origin of this band is a matter of controversy, since it has been related to different causes, extended defects being one of the candidates for this emission. The CL images were acquired around crystal defects. It is observed that the 3.3 eV emission is enhanced around the crystal defects; though it is also observed, but weaker, out of the defect regions, which suggests that there exist two luminescence emissions peaking very close to 3.3 eV. The two emissions, one related to structural defects and the other to the LO phonon replica of the free excitonic band, appear very close each other and their relative intensity should determine the shape of the spectrum.     

On perfectly normal dense subspaces of products

Let M be a separable metric space consisting of more than one point. We construct perfectly normal dense subspaces Z⊂Mc² and (under additional set-theoretic assumption) Y⊂Mc which are not collectionwise Hausdorff.     

Nitric oxide concentration measurements in atmospheric pressure flames using electronic-resonance-enhanced coherent anti-Stokes Raman scattering

We report the application of electronic-resonance-enhanced coherent anti-Stokes Raman scattering (ERE-CARS) for measurements of nitric oxide concentration ([NO]) in three different atmospheric pressure flames. Visible pump (532 nm) and Stokes (591 nm) beams are used to probe the Q-branch of the Raman transition. A significant resonance enhancement is obtained by tuning an ultraviolet probe beam (236 nm) into resonance with specific rotational transitions in the (v’=0, v”=1) vibrational band of the A²Σ⁺–X²Π electronic system of NO. ERE-CARS spectra are recorded at various heights within a hydrogen-air flame producing relatively low concentrations of NO over a Hencken burner. Good agreement is obtained between NO ERE-CARS measurements and the results of flame computations using UNICORN, a two-dimensional flame code. Excellent agreement between measured and calculated NO spectra is also obtained when using a modified version of the Sandia CARSFT code for heavily sooting acetylene-air flames (φ=0.8 to φ=1.6) on the same Hencken burner. Finally, NO concentration profiles are measured using ERE-CARS in a laminar, counter-flow, non-premixed hydrogen-air flame. Spectral scans are recorded by probing the Q₁ (9.5), Q₁ (13.5) and Q₁ (17.5) Raman transitions. The measured shape of the [NO] profile is in good agreement with that predicted using the OPPDIF code, even without correcting for collisional effects. These comparisons between [NO] measurements and predictions establish the utility of ERE-CARS for detection of NO in flames with large temperature and concentration gradients as well as in sooting environments. PACS 07.88.+y; 42.62.Fi; 42.65.Dr     

Photoemission studies of oxygen adsorbed on a LiAl(1 1 0) alloy surface: Role of Li segregation

We investigated that the effect of the number of segregated Li atoms on the rate of oxidation on a LiAl alloy surface. Oxygen molecules adsorbed on the LiAl alloy react with the surface atoms to form stable oxides. The segregated Li atoms at reconstructed surfaces (c(2×2) and (2×1)) enhance the oxidation rate and form stable LiAlO_x and Li₂O. The degree of enhancement of oxidation by segregated Li atoms varies as a function of O₂ exposure and annealing temperature, where the latter is directly related to the mode of surface reconstruction by Li segregation.     

Magnetized cosmological models in bimetric theory of gravitation

Bianchi type-III magnetized cosmological model when the field of gravitation is governed by either a perfect fluid or cosmic string is investigated in Rosen’s [1] bimetric theory of gravitation. To complete determinate solution, the condition, viz., A=(BC) ⁿ , where n is a constant, between the metric potentials is used. We have assumed different equations of state for cosmic string [2] for the complete solution of the model. Some physical and geometrical properties of the exhibited model are discussed and studied.     

Markarian 8星系的包层辐射

使用美国甚大天线阵(VLA).对Markarian 8星系进行了多频观测.多频VLA观测表明,Markarian 8星系有三个主要的射电子成份,它们浸在一个弥漫的星系包层中.包层的射电谱是陡的非热谱.本文根据VLA观测确定了包层的物理参量,并讨论了包层中相对论性电子的可能起因.本文估计了包层非热辐射所要求的超新星爆发率.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

Growth of InAs nanostructures on InP using atomic-force nanolithography

Atomic-force nanolithography was used to control the nucleation sites of InAs nanostructures on InP substrates. Indentations with a wide range of dimensions were produced on InP. InAs nanostructures were selectively grown by metal organic vapor phase epitaxy. It is shown that the number of active nucleation sites depends on the normal force applied during nanoindentation. Crystalline defects introduced by nanoindentation are shown to be nucleation sites for these nanostructures. The presence of screw dislocations within the grown nanostructures further supports this observation. PACS 81.07.-b; 68.37.Ps; 81.16.Nd