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51.
Hai-Sheng Li Zhu Qingxin Song Lan Qian Wu 《International Journal of Theoretical Physics》2013,52(6):1893-1907
Two quantum search algorithms are proposed for known and unknown number of solutions. The first algorithm begins with an arbitrary rotation phase Grover search algorithm by recursive equations, then a sub-algorithm (G α algorithm) and the corresponding quantum circuits are designed, the probability of success and expected number of iterations of the sub-algorithm to find a solution are analyzed. Based on these results, we design the whole algorithm and estimate the expected number of iterations to search all solutions. The design of the second algorithm follows the same steps. We firstly study a quantum counting algorithm, then design a sub-algorithm (QCG algorithm), and analyze the probability of success and the expected number of iterations to find a solution. Finally the whole algorithm for all solutions is designed and analyzed. The analysis results show that these two algorithms find all solutions in the expected times of $O(t\sqrt{N})$ (t is a number of solutions and N is a total of states). 相似文献
52.
多孔硅拉曼光谱随激发功率变化的研究 总被引:2,自引:0,他引:2
用阳极氧化法新制备了多孔硅样品,以457.5nm固体激光器为激发光源,在不同激发功率下,获得了拉曼谱图和一些谱峰参量随激光功率的变化关系。解释了520cm^-1和300cm^-1附近拉曼峰随功率变化的一系列可逆的实验现象:随激光功率升高出现的红移和非对称性展宽,主要是由于样品局域平均粒径变小而受量子限域效应的影响导致的;样品局域平均粒径在表面上的二维减小与随激光功率升高而导致的局域温升并不违背基本的热力学定律;高功率时520cm^-1附近双峰的出现是由于多孔硅样品局域平均粒径达到一定阈值而导致的纵模和横模双声子模的分裂。 相似文献
53.
采用传统固相法和水热法成功地制备出棒状La2Zr2O7:Eu3+荧光粉. 利用X射线粉末衍射仪、透射电镜和荧光光谱仪等分析了产物的结构、形貌和发光特性. 结果表明红色荧光粉La2Zr2O7:Eu3+有良好的晶相,属于立方结构,空间点群为Fd3m; 其形貌主要为纳米棒, 平均直径约47 nm, 长度为50~700 nm. 并对纳米棒的生长机理进行了探讨. 在466 nm蓝光激发下,La2Zr2O7:Eu3+荧光粉能发射出Eu3+的特征红色荧光,发射主峰位于616 nm处,归属于Eu3+的5DO→7F2超灵敏电偶极跃迁.此外,在产物的发射光谱中能够观察到5D1→7FJ (J=0, 1, 2)跃迁和5D1→7FJ (J=1, 2, 4)跃迁的劈裂峰,这说明Eu3+处在低对称性的晶体场格位中. 相似文献
54.
The excitation energy transfer between a donor–acceptor pair with fixed distance apart through energy exchanging with environment is investigated. The total system is modeled as two two-level systems (TLSs) interacting with many harmonic oscillators. The pair behaves coherently or incoherently, depending on whether the dipolar coupling is stronger or weaker than the TLS–environment coupling. The environmental linear dispersion relation gives an analytical solution to the pair?s probability involving all the retardation times. We found that the long-time trapping of energy within the pair is caused by the inhibiting dark-state radiative decay when two TLSs are at half a resonant wavelength. 相似文献
55.
Color-stable,reduced efficiency roll-off hybrid white organic light emitting diodes with ultra high brightness 下载免费PDF全文
High-brightness and color-stable two-wavelength hybrid white organic light emitting diodes (HWOLEDs) with the configuration of indium tin oxide (ITO)/ N, N, N, N-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD): tetrafluoro-tetracyanoqino dimethane (F4-TCNQ)/N,N-di(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)/ 4,4-N,N-dicarbazolebiphenyl (CBP): iridium (III) diazine complexes (MPPZ) 2 Ir(acac)/NPB/2-methyl-9,10-di(2-naphthyl)anthracene (MADN): p-bis(p-N,N-di-phenyl-aminostyryl)benzene (DSA-ph)/bis(10-hydroxybenzo[h] quino-linato)beryllium complex (Bebq2)/LiF/Al have been fabricated and characterized. The optimal brightness of the device is 69932 cd/m2 at a voltage of 13 V, and the Commission Internationale de l'Eclairage (CIE) chromaticity coordinates are almost constant during a large voltage change of 6-12 V. Furthermore, a current efficiency of 15.3 cd/A at an illumination-relevant brightness of 1000 cd/m2 is obtained, which rolls off slightly to 13.0 cd/A at an ultra high brightness of 50000 cd/m2. We attribute this great performance to wisely selecting an appropriate spacer together with effectively utilizing the combinations of exciton-harvested orange-phosphorescence/blue-fluorescence in the device. Undoubtedly, this is one of the most exciting results in two-wavelength HWOLEDs up to now. 相似文献
56.
Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In2O3 films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In2O3:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively. 相似文献
57.
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59.
采用MonteCarlo方法对由异类自旋组成混合Heisenberg自旋体系进行了数值计算,以模拟和预测基于交换耦合模型纳米双相(硬磁软磁)磁性体系的磁性.区别于以往所报道的那些直接针对硬磁NdFeB与软磁纳米αFe复合磁体的微磁学计算工作,着眼于符合Heisenberg模型的两类完全不同的原子自旋集团(硬磁自旋和软磁自旋)之间的直接交换耦合作用,模拟计算了由这两类自旋组成的复合自旋体系的内禀矫顽力Hc、剩余磁化强度Mr、最大磁能级(M×H)max等宏观磁性参量随软磁自旋集团的尺度和体积百分比、两类自旋集
关键词:
Heisenberg模型
MonteCarlo模拟
纳米复合磁体
Nd-Fe-B 相似文献
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