Nucleation and growth of SnO2 nanocrystallites prepared by pulsed laser deposition

We report in detail the synthesis and microstructural characterization of SnO₂ nanocrystallites produced using a pulsed laser deposition (PLD) method. A detailed observation of the microstructural evolution of the as-prepared SnO₂ nanocrystallites has been carried out, and their grain sizes, shapes, crystallography characteristics, and morphologies have been also determined. The nucleation and growth processes of the SnO₂ nanocrystallites are discussed in more detail in order to examine how the PLD techniques and conditions affect the evolution of grain sizes, shapes, crystallography characteristics and morphologies. PACS 81.15.Fg; 81.07.Bc; 68.37.Lp     

半导体中相干控制光电流对光场的偏振依赖性

采用黄金定则方法和Kane六能带模型，分析了半导体中的量子干涉控制光生电流效应.计算了不同偏振光场下载流子在动量空间的初始布居分布，从微观上阐明了相干电流对光场的偏振依赖特性.在平行线偏振情况下，相干电流方向沿光场的偏振方向；而在正交线偏振情况下，电流方向与倍频光的偏振方向相同.还证明了只有当单光子跃迁和双光子跃迁相平衡时才能获得最大的电流注入效率. 关键词： 量子干涉 光电流 线偏振光     

Heteronuclear decoupling interference during symmetry-based homonuclear recoupling in solid-state NMR

We examine the influence of continuous-wave heteronuclear decoupling on symmetry-based double-quantum homonuclear dipolar recoupling, using experimental measurements, numerical simulations, and average Hamiltonian theory. There are two distinct regimes in which the heteronuclear interference effects are minimized. The first regime utilizes a moderate homonuclear recoupling field and a strong heteronuclear decoupling field; the second regime utilizes a strong homonuclear recoupling field and a weak or absent heteronuclear decoupling field. The second regime is experimentally accessible at moderate or high magic-angle-spinning frequencies and is particularly relevant for many realistic applications of solid-state NMR recoupling experiments to organic or biological materials.     

Heterogeneity in oscillator networks: are smaller worlds easier to synchronize?

Small-world and scale-free networks are known to be more easily synchronized than regular lattices, which is usually attributed to the smaller network distance between oscillators. Surprisingly, we find that networks with a homogeneous distribution of connectivity are more synchronizable than heterogeneous ones, even though the average network distance is larger. We present numerical computations and analytical estimates on synchronizability of the network in terms of its heterogeneity parameters. Our results suggest that some degree of homogeneity is expected in naturally evolved structures, such as neural networks, where synchronizability is desirable.     

Numerical and experimental investigation of the effect of filtering on chaotic symbolic dynamics

Motivated by the practical consideration of the measurement of chaotic signals in experiments or the transmission of these signals through a physical medium, we investigate the effect of filtering on chaotic symbolic dynamics. We focus on the linear, time-invariant filters that are used frequently in many applications, and on the two quantities characterizing chaotic symbolic dynamics: topological entropy and bit-error rate. Theoretical consideration suggests that the topological entropy is invariant under filtering. Since computation of this entropy requires that the generating partition for defining the symbolic dynamics be known, in practical situations the computed entropy may change as a filtering parameter is changed. We find, through numerical computations and experiments with a chaotic electronic circuit, that with reasonable care the computed or measured entropy values can be preserved for a wide range of the filtering parameter.     

Teleportation of an n-bit one-photon and vacuum entangled GHZ cavity-field state

A scheme for teleporting an arbitrary n-bit one-photon and vacuum entangled Greenberger-Horne-Zeilinger （GHZ） state is proposed. In this scheme, the maximum entanglement GHZ state is used as a quantum channel. We find a method of distinguishing four Bell states just by detecting the atomic states three times, which is irrelevant to the qubit number of the state to be teleported.     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.     

Material and device properties of ZnO-based film bulk acoustic resonator for mass sensing applications

Zinc oxide based film bulk acoustic resonator as mass sensor was fabricated by multi-target magnetron sputtering under optimized deposition condition. Each layer of the device was well crystallized and highly textural observed by transmission electron microscopy and X-ray diffraction measurement. Through piezoelectric test, the device vibrated with significant distance. The influence of top electrode on resonant frequency and the bio-specimen of mass loading effect were investigated. Data show that the device has qualified properties as mass biosensor, with a resonant frequency of 3-4 GHz and a high sensitivity of 8-10 kHz cm²/ng.     

Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊

A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.     

Mimicking optical activity for generating radially polarized light

We propose a new scheme for generating radially polarized light by mimicking optical activity using linear birefringence. It involves a birefringent spirally varying retarder sandwiched between two orthogonally oriented quarter-wave plates. Using Poincaré sphere representation, we show that the polarization transformation of such a scheme is equivalent to that of a spirally varying optical activity and is capable of generating radially polarized light. We demonstrate the proof-of-concept using y-cut crystalline quartz.