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Cobalt antidot arrays with different thicknesses are fabricated by rf magnetron sputtering onto porous alumina substrates. Scanning electron microscopy and grazing incidence x-ray diffraction are employed to characterize the morphology and crystal structure of the antidot array, respectively. The temperature dependence of magnetic properties shows that in the temperature range 5K--300K, coercivity and squareness increase firstly, reach their maximum values, then decrease. The anomalous temperature dependences of coercivity and squareness are discussed by considering the pinning effect of the antidot and the magnetocrystalline anisotropy. 相似文献
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主要介绍了丝绸之路上多元文化的典型代表——艾德莱斯绸.文章重点介绍了艾德莱斯绸的历史和传说,扎经染色工艺,各类艾德莱斯绸的特点及典型的艾德莱斯绸图案. 相似文献
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本文给出了Banach空间广义分解定理的一个初等证明,并利用它来证明两个对称不等式.这是首次在Banach空间获得这样的不等式. 相似文献
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The complete and incomplete aggregation-annihilation processes are investigated with the method of generating function, and the scale exponents are obtained exactly. We find that the scale exponents of incomplete aggregation-annihilation process are different from the previous exponents obtained by different methods. The time dependence of the total number of clusters and the total mass of clusters are analytically obtained. 相似文献
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Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films 下载免费PDF全文
Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition'parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of (002) crystal planes of the He-charged Ti film shifts to a lower angle and that of (100) crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening. 相似文献
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Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy 总被引:1,自引:0,他引:1 下载免费PDF全文
Phase change memory (PCM) cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state (higher resistance state) to the crystalline state (lower resistance state). The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low (only several μA). An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad(Si), which makes it attractive for space-based applications. 相似文献
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