An emittance measurement device for a space-charge dominated electron beam

Beam emittance is one of the most important parameters for electron sources. To investigate the beam emittance of the 3.5-cell DC-SC photocathode injector developed at Peking University, a multi-slit emittance measurement device has been designed and manufactured. The designed slit width, mask thickness and beamlet drift length are 100 μ m, 3 mm and 430 mm respectively. It is suitable for the electron beam with energy of about 5 MeV and the average current less than 0.1 mA. The preliminary measurement result of the rms emittance of the electron beam produced by the DC-SC injector is about 5-7 mm·mrad.     

Low temperature testing and neutron irradiation of a swept charge device on board the HXMT satellite

We present the low temperature testing of an SCD detector, investigating its performance such as readout noise, energy resolution at 5.9 keV and dark current. The SCD's performance is closely related to temperature, and the temperature range of -80 ℃ to -50 ℃ is the best choice, where the FWHM at 5.9 keV is about 130 eV. The influence of the neutron irradiation from an electrostatic accelerator with fluence up to 1×10⁹ cm^-2 has been examined. We find the SCD is not vulnerable to neutron irradiation. The detailed operations of the SCD and the test results of low temperature are reported, and the results of neutron irradiation are discussed.     

小位移条件下混沌隔振装置的设计与研究

本文根据混沌隔振原理, 设计出小位移下的混沌隔振装置, 该装置能够在小位移下产生强非线性, 并且其线性部分与非线性部分完全区分开, 实验中易于调节其整体刚度, 以及线性和非线性项比例, 大大增加了该装置在工程中的应用前景. 并利用数值计算方法对特定参数下的隔振装置在简谐激励力作用下的运动进行分析, 证实了该混沌隔振装置的可行性.     

TMR与GMR传感器1/f噪声的研究进展

隧道结磁阻(TMR) 传感器及巨磁阻(GMR) 传感器的1/f噪声在低频段噪声功率密度较大, 是影响其低频下分辨率和灵敏度的主要噪声形式. 本文详细介绍了近年来TMR传感器及GMR传感器1/f噪声的特点、来源、理论模型、检测方法及降噪措施等方面的研究进展, 并就隧道结磁阻传感器1/f噪声的物理模型进行了详细解释. 通过纳米模拟软件Virtual NanoLab对不同MgO厚度的Fe/MgO/Fe型磁性隧道结(MTJ) 进行了隧穿概率和TMR变化率的模拟计算, 得到保守估计与乐观估计的TMR变化率, 分别为98.1%与10324.55%, 同时通过MTJ的噪声模型分析了MgO厚度对TMR传感器噪声的影响. 制备了磁屏蔽系数大于10000的磁屏蔽筒并搭建了磁阻传感器1/f噪声的测试平台, 通过测试验证了磁屏蔽系统对环境磁场具有较好的屏蔽效果, 为噪声检测提供了稳定的磁场空间. 最后分析了TMR与GMR中各种因素对传感器噪声的影响, 提出了影响MTJ传感器1/f噪声的因素及一些降噪措施.     

流体通过涡激振动机翼的声辐射研究

为了有效地降低涡激噪声,研究了粘性流体通过涡激振动机翼的声辐射。采用Navier-Stokes方程描述二维机翼的流固耦合运动,用弹簧系统代替实际固体变形产生的回复力和力矩,翼型的运动是两个自由度,即垂直于来流的振荡和转动振荡;为了模拟涡激振动,机翼的初始攻角取得比较大,以便产生周期性的旋涡脱落及周期性的流体动力,后者与弹簧系统相耦合,引起振动,用Lighthill声比拟方法研究了由此引起的声辐射。计算结果表明:当涡脱频率和机翼的固有的振动频率一致时,发生锁定的现象,此时的声辐射达到最大。     

Time-Resolved Femtosecond Degenerate Four-Wave Mixing in LiNbO3：Fe,Mg Crystal

Forward degenerate four-wave mixing （DFWM） processes are investigated with a femtosecond pulsed laser in lithium niobate crystal doubly-doped with magnesium and iron （LiNbO3：Fe, Mg）. The pulse energy dependence reveals a pure third-order nonlinear response, and the third-order nonlinear susceptibility x^（3） in the material is evaluated to be 4.96 × 10^-13 esu. The time-resolved DFWM process shows a response time of x^（3） shorter than 100fs, which is due to the nonresonant electronic nonlinearities. Our results indicate that LiNbO3 crystals have potentials for ultrafast real-time optical processing systems, which require a large and fast x^（3） optical nonlinearity.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

Mach-Zehnder电光波导调制器啁啾的研究

在光纤通信系统中,调制器的啁啾参数是衡量调制器性能的重要参数之一.为了深入研究铌酸锂M-Z结构外调制的机理,导出了Mach-Zehnder结构外调制方式调制器的啁啾参数表达式,研究表明该结构调制器频率啁啾不为零,而且调制器的直流偏置漂移对啁啾的影响很小.详细讨论了影响啁啾参数的因素,分析了直流消光比、外加信号以及直流偏置漂移对器件啁啾参数的影响.分析结果表明,利用负啁啾可以改善系统的色散特性.     

塑料光纤(POF)的发展及其应用

阐述了阶跃型塑料光纤和渐变型塑料光纤的发展过程及其国内外研究现状,介绍了塑料光纤在局域网、汽车工业、传感器等领域的应用.通过对石英光纤、金属电缆与塑料光纤的性能进行比较,得到了塑料光纤具有芯径大、柔韧性好、价格低廉、制作简单等特点.就塑料光纤在局域网、汽车工业、传感器等领域的应用进行了分析、总结,结果表明降低塑料光纤的传输损耗可以进一步扩大其应用领域.最后分析了我国塑料光纤的研究、生产现状与国际水平的差距,并提出了提高国产塑料光纤技术水平的建议.     

全光网中基于FBG的OADM设计研究

提出一种全新的OADM(Optical Add—Drop Multiplexers)结构设计，此结构仅采用一个多端口环行器，大大减少了环行器的数量，节约了成本。若要上／下路一个波长．则只需要一个FBG(Fiber Bragg Grating)；若要同时上／下路多个波长，则需要2m个FBG。计算机仿真实验证明此结构比H．Yuan提出的结构具有更低的损耗．对全光网络的实现具有重大的意义。