半导体单晶生长过程中的位错研究

阐述了现有的半导体单晶位错模型,即临界切应力模型和粘塑性模型的基本理论及应用状况.分析了熔体法单晶生长过程中影响位错产生、增殖的各种因素,以及抑制位错增殖的措施.与熔体不润湿、与晶体热膨胀系数相近的坩埚材料,低位错密度的籽晶可有效地抑制生长晶体的位错密度;固液界面的形状及晶体内的温度梯度是降低位错密度的关键控制因素,而两因素又受到炉膛温度梯度、长晶速率、气体和熔体对流等晶体生长工艺参数的影响.最后,对熔体单晶生长过程的位错研究进行了展望.     

钾明矾蓄热性能的研究与改善

钾明矾(KAl(SO4)2·12H2O)有较高的潜热和良好的导热性(熔化热232.4kJ/kg,导热系数为0.55W/m·K),熔点为91℃,是中低温相变材料中较有开发价值的一种.但是它的过冷度高达19.8℃,并且由于相变过程伴随着结晶水的蒸发使无机盐的使用寿命大大降低.本文通过冷指法及添加成核剂的方法对硫酸铝钾的过冷现象进行了研究,结果表明成核剂NiSO4·6H2O、MgCl2·6H2O能较好的改善过冷现象,当MgCl2·6H2O的添加量为2;时可使过冷度降为零,且能保持钾明矾的相变温度而不使其降低.利用MgCl2·6H2O具有很强的吸湿性,可以补充相变过程中损失的水分,使相变材料的使用寿命大大提高.     

兆巴高压下c向蓝宝石的冲击辐射研究

采用三层夹心靶结构,利用铜箔与抛光蓝宝石之间良好的接触条件,使用辐射式高温计在1.30～1.72兆巴压力范围内观测到c向蓝宝石的强冲击辐射。在1.30和1.72兆巴的冲击压力下,得到蓝宝石在0.633μm波长处的不透明系数为1.7 cm-1和5.0 cm-1。实验显示蓝宝石的冲击辐射随着冲击压力的增加而急剧增强。     

工作气压对磁控溅射ITO薄膜性能的影响

工作气压在ITO薄膜的制备过程中是一个重要的工艺参数,直接决定着薄膜的性能.本文利用射频磁控溅射方法,采用氧化铟锡陶瓷靶材,在衬底温度为175℃,工作气压范围为0.45～1.0 Pa条件下,制备了氧化铟锡透明导电薄膜.研究了工作气压对其微观结构、表面形貌和光电特性的影响.在衬底温度为175℃、纯氩气中制备的氧化铟锡薄膜电阻率为3.04 ×10-4 Ω·cm、可见光波段(400～800 nm)透过率为91.9;,适合用作异质结太阳电池的前电极和减反射膜.     

CTAB与SDBS对碳酸锶粒子生长形态调控及机理研究

以表面活性剂CTAB和SDBS为化学添加剂,采用化学共沉淀法对碳酸锶晶体的生长形态进行调控,成功地制备出了实心的树枝状和花瓣为空心的花状碳酸锶粉体,并用X射线衍射(XRD)、扫描电子显微镜(SEM)和傅里叶变换红外光谱(FT-IR)等分析手段对样品进行了表征;最后重点对化学添加剂可能产生的影响机理进行了初步的探讨.结果表明,CTAB和SDBS在晶体生长的过程中能起到显著的影响作用,两者对粒子分散性能的作用效果相反,而且后者对晶体(013)和(213)晶面表面能降低的贡献明显大于前者.     

用化学溶液方法在Ni-5at%W基底上制备La2Zr2O7过渡层的研究

La2Zr2O7(LZO)过渡层以其独特的物理化学性质越来越受到人们的关注。本文以乙酰丙酮镧和乙酰丙酮锆为前驱盐,丙酸为溶剂配置前驱液,用化学溶液方法(CSD)在具有立方织构的Ni-5at%W基底上制备了LZO过渡层薄膜。研究了前驱液成分、性质以及退火温度对LZO成相以及取向的影响。用常规XRD和X射线四环衍射仪分析了LZO薄膜的相成分和织构。结果显示,在1050℃下退火可以获得强立方织构的LZO薄膜,其中(222)峰的Phi扫描半高宽值为8.95°;(400)峰的Chi扫描半高宽值为6.8°。用高分辨扫描电子显微镜(FE-SEM)观察到LZO薄膜表面均匀致密,没有裂纹和空洞。     

Synthesis and Herbicidal Activity of Novel Sulfonylureas Containing Thiadiazol Moiety

Thirteen novel sulfonylureas containing thiadiazole moiety were synthesized in a two-step reaction. Their structures were determined using IR, ^1H NMR, HRFTMS, and elemental analysis. Herbicidal activities of these compounds were determined in the green house bio-assay. The results show that four compounds among them exhibit some activity toward four tested herbs.     

Decomposition Reaction of Zn-MPA（3-Mercaptopropionic Acid） Complex Under Microwave Irradiation

The thermal decomposition of Zn-MPA complex was investigated under microwave irradiation. ZnO and ZnS nanocrystals could be obtained by decomposing Zn-MPA（3-mercaptopropionic acid） complex under different reaction conditions. It was found that both the pH value of the solution and the molar ratio of Zn2＋ and MPA can play an important role in the formation of ZnO and ZnS nanocrystals. MPA mainly acts as an S source or as a complexing agent. This study provides a new route for the controllable preparation of semiconductor nanocrystals.     

Tailoring Pore Structure and Morphologies in Covalent Organic Frameworks for Xe/Kr Capture and Separation

As a rising star among porous solid materials, covalent organic frameworks(COFs) with excellent properties including but not limit to facilely controllable structure, high porosity, and multi-chemical functionality represent significant potential for efficient ¹²⁷Xe/⁸⁵Kr capture and separation. In this study, through tuning the length of the organic ligands, two-dimensional(2D) COF mate-rials with identical connection group but different pore properties, denoted as ATFG-COF and TpPa-COF with AA-stacking model and TpBD-COF with AB-stacking model were synthesized and tested for Kr and Xe adsorption for the first time. Adsorption measurements indicate that the narrower pore apertures and higher porosity are conducive for COF materials to capture Xe and Kr. Furthermore, the Henry's constant, isosteric heat of adsorption(Q_st), and ideal adsorbed solution theory(IAST) selectivity of ATFG-COF, the pore size of which is closest to the kinetic diameter of the Xe atom(0.41 nm) among 2D COF materials, were carried out based on the single component sorption isotherms. The results illustrate that the high isosteric heat values of Xe/Kr adsorption on ATFG-COF are 25 and 16 kJ/mol at room temperature, respectively. Henry's law predicts that the selectivity factor of Xe to Kr is 6.07, consistent with the adsorption selectivity(ca. 6) calculated based on the IAST.     

嵌段共聚物自组装的研究进展

嵌段共聚物自组装在光学、电子、信息、化学及生物领域有着广泛的应用前景.本文从实验观测、理论研究和计算机模拟三个方面概述了嵌段共聚物自组装领域的研究进展.在实验观测方面,着重介绍了嵌段共聚物在体相及膜中的自组装及外场调控作用方面的研究进展;理论方面则分别介绍了强分相理论、弱分相理论、自洽场理论、动态密度泛函方法和元胞动力学等在嵌段共聚物自组装领域的应用;计算机模拟方面就 Monte Carlo 模拟、耗散粒子动力学等方法在该领域的应用作了详细的阐述.